®
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Table 1: Main Product Characteristics
IF(AV) 1 A
VRRM 30 V
Tj (max) 150°C
VF(max) 0.3 V
STPS1L30
LOW DROP POWER SCHOTTKY RECTIFIER
REV. 6
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 30 V
IF(RMS) RMS forward voltage 10 A
IF(AV) Average forward current TL = 135°C δ = 0.5 1A
IFSM Surge non repetitive forward current tp = 10ms sinusoidal 75 A
IRRM Repetitive peak reverse current tp = 2µs F = 1kHz square 1 A
IRSM Non repetitive peak reverse current tp = 100µs square 1 A
PARM Repetitive peak avalanche power tp = 1µs Tj = 25°C 1500 W
Tstg Storage temperature range -65 to + 150 °C
TjMaximum operating junction temperature * 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
* : thermal runaway condition for a diode on its own heatsink
dPtot
dTj
--------------- 1
Rth j a
–()
-------------------------->
SMA
(JEDEC DO-214AC)
STPS1L30A
SMB
(JEDEC DO-214AA)
STPS1L30U
August 2004
FEATURES AND BENEFITS
■Very low forward voltage drop for less power
dissipation
■Optimized conduction/reverse losses trade-off
which means the highest yield in the
applications
■Surface mount miniature packages
■Avalanche capability specified
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC con-
verters, freewheel diode and integrated circuit
latch up protection.
Packaged in SMA and SMB, this device is espe-
cially intended for use in parallel with MOSFETs in
synchronous rectification.
Table 2: Order Codes
Part Number Marking
STPS1L30A GB3
STPS1L30U G23
STPS1L30
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Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics
Pulse test: * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.225 x IF(AV) + 0.075 IF2(RMS)
Symbol Parameter Value Unit
Rth(j-l) Junction to lead SMA 30 °C/W
SMB 25
Symbol Parameter Tests conditions Min. Typ Max. Unit
IR * Reverse leakage current Tj = 25°C VR = VRRM
200 µA
Tj = 100°C 615 mA
VF * Forward voltage drop
Tj = 25°C IF = 1A 0.395
V
Tj = 125°C 0.26 0.3
Tj = 25°C IF = 2A 0.445
Tj = 125°C 0.325 0.375
Figure 1: Average forward power dissipation
versus average forward current
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
Figure 3: Normalized avalanche power
derating versus pulse duration
Figure 4: Normalized avalanche power
derating versus junction temperature
P (W)
F(AV)
T
δ
=tp/T tp
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
δ= 1
δ= 0.5
δ= 0.2
δ= 0.1
δ= 0.05
I (A)
F(AV)
0 25 50 75 100 125 150
I (A)
F(AV)
T
δ=tp/T tp
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T (°C)
amb
R =100°C/W
th(j-a)
R =120°C/W
th(j-a)
R=R
th(j-a) th(j-I)
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
STPS1L30
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Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMA)
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMB)
Figure 7: Relative variation of thermal
impedance junction to ambient versus pulse
duration (epoxy printed circuit board,
e(Cu)=35µm, recommended pad layout) (SMA)
Figure 8: Relative variation of thermal
impedance junction to ambient versus pulse
duration (epoxy printed circuit board,
e(Cu)=35µm, recommended pad layout) (SMB)
Figure 9: Reverse leakage current versus
reverse voltage applied (typical values)
Figure 10: Junction capacitance versus
reverse voltage applied (typical values)
I (A)
M
1E-3 1E-2 1E-1 1E+0
0
2
4
6
8
10
I
M
t
δ=0.5
t(s)
T =25°C
a
T =50°C
a
T =100°C
a
1E-3 1E-2 1E-1 1E+0
0
2
4
6
8
10
I (A)
M
IM
t
δ=0.5 t(s)
T =25°C
a
T =50°C
a
T =100°C
a
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.0
0.2
0.4
0.6
0.8
1.0
Z/R
th(j-c) th(j-c)
T
δ=tp/T tp
t (s)
p
δ= 0.5
δ= 0.2
δ= 0.1
Single pulse
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.0
0.2
0.4
0.6
0.8
1.0
Z/R
th(j-c) th(j-c)
T
δ=tp/T tp
t (s)
p
δ= 0.5
δ= 0.2
δ= 0.1
Single pulse
0 5 10 15 20 25 30
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
I (mA)
R
V (V)
R
T =125°C
j
T =150°C
j
T =100°C
j
T =25°C
j
12 5102030
10
100
500
C(pF)
V (V)
R
F=1MHz
T =25°C
j
STPS1L30
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Figure 11: Forward voltage drop versus
forward current (typical values, high level)
Figure 12: Forward voltage drop versus
forward current (maximum values, low level)
Figure 13: Thermal resistance junction to
ambient versus copper surface under each
lead (Epoxy printed circuit board FR4, copper
thickness: 35µm) (SMA)
Figure 14: Thermal resistance junction to
ambient versus copper surface under each
lead (Epoxy printed circuit board FR4, copper
thickness: 35µm) (SMB)
I (A)
FM
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0.10
1.00
10.00
T =25°C
j
T =100°C
j
V (V)
FM
T =150°C
j
0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I (A)
FM
T =25°C
j
T =125°C
j
V (V)
FM
T =150°C
(typical values)
j
T =100°C
j
012345
0
20
40
60
80
100
120
140
S(Cu)(cm²)
R (°C/W)
th(j-a)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
20
40
60
80
100
120
S(Cu)(cm²)
R (°C/W)
th(j-a)
STPS1L30
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Figure 15: SMA Package Mechanical Data
Figure 16: SMA Foot Print Dimensions
(in millimeters)
E
C
L
E1
D
A1
A2
b
2.40
1.65
1.45 1.45
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.03 0.075 0.080
A2 0.05 0.20 0.002 0.008
b 1.25 1.65 0.049 0.065
c 0.15 0.41 0.006 0.016
E 4.80 5.60 0.189 0.220
E1 3.95 4.60 0.156 0.181
D 2.25 2.95 0.089 0.116
L 0.75 1.60 0.030 0.063
STPS1L30
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Figure 17: SMB Package Mechanical Data
Figure 18: SMB Foot Print Dimensions
(in millimeters)
E
C
L
E1
D
A1
A2
b
1.52 2.75
2.3
1.52
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008
b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
E 5.10 5.60 0.201 0.220
E1 4.05 4.60 0.159 0.181
D 3.30 3.95 0.130 0.156
L 0.75 1.60 0.030 0.063
STPS1L30
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
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Table 6: Ordering Information
■Band indicates cathode
■Epoxy meets UL94, V0
Ordering type Marking Package Weight Base qty Delivery mode
STPS1L30A GB3 SMA 0.068 g 5000 Tape & reel
STPS1L30U G23 SMB 0.107 g 2500 Tape & reel
Table 7: Revision History
Date Revision Description of Changes
Jul-2003 5A Last update.
Aug-2004 6 SMA package dimensions update. Reference A1 max.
changed from 2.70mm (0.106inc.) to 2.03mm (0.080).
