CPH6519
No.7399-1/4
Features
•Composite type with 2 transistors contained in the
CPH package currently in use, improving the mount-
ing efficiency greatly.
•The CPH6519 is formed with two chips, being
equivalent to the 2SC3689, placed in one package.
•Adoption of FBET process.
•High DC current gain (hFE=800 to 3200).
•High VEBO (VEBO≥15V).
•Excellent in thermal equilibrium and pair capability.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7399
CPH6519
Package Dimensions
unit : mm
2212
[CPH6519]
NPN Epitaxial Planar Silicon Composite Transistors
Low-Frequency General-Purpose
Amplifier, Driver Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 60 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 15 V
Collector Current IC100 mA
Collector Current (Pulse) ICP 200 mA
Base Current IB20 mA
Collector Dissipation PC
1unit
350 mW
Total Dissipation PT500 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=40V, IE=0 0.1 µA
Emitter Cutoff Current IEBO VEB=10V, I C=0 0.1 µA
DC Current Gain hFE VCE=5V, IC=10mA 800 1500 3200
DC Current Gain Ratio hFE(small/ VCE=5V, IC=10mA 0.8 0.98
large)
Marking : 3F Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
22503 TS IM TA-100338
0.05
0.9
0.7 0.2 1.6 0.60.6
0.95
123
654
2.8
0.2
2.9 0.15
0.4
1 : Base 1
2 : Emitter 1
3 : Collector 2
4 : Emitter 2
5 : Base 2
6 : Collector 1
SANYO : CPH6
CPH6519
No.7399-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Gain-Bandwidth Product fTVCE=10V, IC=10mA 200 MHz
Output Capacitance Cob VCB=10V, f=1MHz 1.5 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=1mA 0.1 0.5 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=1mA 0.8 1.1 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 15 V
Note : The specifications shown above are for each individual transistor.
Electrical Connection
1000
7
5
3
2
10000
7
5
3
2
72357
1.0 10 22357
100
hFE -- IC
ITR10568
100
40
60
80
20
00 0.2 0.60.4 0.8 1.0
IC -- VCE
IB=0
250µA
200µA
150µA
100µA
50µA
ITR10565
VCE=5V
Ta=120°C
25°C
--40°C
120
80
100
60
40
20
00 0.2 0.4 0.6 0.8 1.21.0
IC -- VBE
ITR10567
Ta=120°C
25°C
--40°C
VCE=5V
20
8
12
16
4
0010 3020 40 50
IC -- VCE
IB=0
9µA
10µA
8µA
7µA
6µA
5µA
4µA
3µA
2µA
1µA
ITR10566
From top
500µA
450µA
400µA
350µA
300µA
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
Collector Current, IC -- mA
DC Current Gain, hFE
B1 E1 C2
C1 B2 E2
(Top view)
TR1 TR2
CPH6519
No.7399-3/4
VCE(sat) -- IC
0.1
7
5
3
2
1.0
7
5
3
2
23 5771.0 10 22357
100
ITR10571
IC / IB=50
VBE(sat) -- IC
1.0
2
10
7
5
3
7
5
3
2
23 57 23 5771.0 10 2
100
ITR10572
IC / IB=50
Ta=120°C
25°C
--40°C
Ta= --40°C
120°C
25°C
100
7
5
3
2
5
3
2
23 5771.0 10 22357
100
fT -- IC
ITR10569
VCE=10V
1.0
7
10
7
5
5
3
3
2
23 5771.0 10 23 57
100
Cob -- VCB
ITR10570
f=1MHz
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
IT05369
A S O
100ms
DC operation Ta=25°C
1ms
10ms
ICP=0.2A
IC=0.1A
3
2
2
3
5
7
2
3
5
7
0.1
0.01
0.001 23 57 23 57
1.0 10
300µs
Collector Dissipation, PC -- mW
Ambient Temperature, Ta -- °C
PC -- Ta
IT05368
100
200
300
350
400
500
600
00 175125 150100755025
1unit
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
total dissipation
CPH6519
No.7399-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2003. Specifications and information herein are subject
to change without notice.
PS
