CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an SOT-23 Surface Mount Package. FEATURED ENHANCED SPECIFICATIONS: IF from 100mA max to 200mA max. SOT-23 CASE CMPSH-3E: CMPSH-3AE: CMPSH-3CE: CMPSH-3SE: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MAXIMUM RATINGS: (TA=25C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Voltage Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL IR IR BVR VF VF VF VF CT trr BVR from 30V min to 40V min. VF from 1.0V max to 0.8V max. MARKING MARKING MARKING MARKING SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg JA CODE: CODE: CODE: CODE: D95E DB1E DB2E DA5E 40 200 350 750 350 -65 to +150 357 CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) TEST CONDITIONS MIN TYP MAX VR=25V 90 500 VR=25V, TA=100C 25 100 IR=100A 40 50 IF=2.0mA 0.29 0.33 IF=15mA 0.37 0.42 IF=100mA 0.61 0.80 IF=200mA 0.65 1.0 VR=1.0V, f=1.0MHz 7.0 IF=IR=10mA, Irr=1.0mA, RL=100 5.0 UNITS V mA mA mA mW C C/W UNITS nA A V V V V V pF ns Enhanced specification Additional Enhanced specification R3 (27-January 2010) CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE LEAD CODE: 1) Anode 2) No Connection 3) Cathode LEAD CODE: 1) Cathode D2 2) Cathode D1 3) Anode D1, D2 LEAD CODE: 1) Anode D2 2) Anode D1 3) Cathode D1, D2 LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: D95E MARKING CODE: DB1E MARKING CODE: DB2E MARKING CODE: DA5E R3 (27-January 2010) w w w. c e n t r a l s e m i . c o m