CMPSH-3E
CMPSH-3AE
CMPSH-3CE
CMPSH-3SE
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPSH-3E Series
types are Enhanced Versions of the CMPSH-3 Series
of Silicon Schottky Diodes in an SOT-23 Surface Mount
Package.
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 40 V
Continuous Forward Current IF 200 mA
Peak Repetitive Forward Voltage IFRM 350 mA
Forward Surge Current, tp=10ms IFSM 750 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR V
R=25V 90 500 nA
IR V
R=25V, TA=100°C 25 100 μA
BVR I
R=100µA 40 50 V
VF I
F=2.0mA 0.29 0.33 V
VF I
F=15mA 0.37 0.42 V
VF I
F=100mA 0.61 0.80 V
VF I
F=200mA 0.65 1.0 V
CT V
R=1.0V, f=1.0MHz 7.0 pF
trr I
F=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns
♦
♦
♦
♦
♦
♦♦
♦ Enhanced specification
♦♦ Additional Enhanced specification
CMPSH-3E: SINGLE MARKING CODE: D95E
CMPSH-3AE: DUAL, COMMON ANODE MARKING CODE: DB1E
CMPSH-3CE: DUAL, COMMON CATHODE MARKING CODE: DB2E
CMPSH-3SE: DUAL, IN SERIES MARKING CODE: DA5E
FEATURED ENHANCED SPECIFICATIONS:
♦ IF from 100mA max to 200mA max.
♦ BVR from 30V min to 40V min.
♦ VF from 1.0V max to 0.8V max.
SOT-23 CASE
R3 (27-January 2010)
www.centralsemi.com
CMPSH-3E
CMPSH-3AE
CMPSH-3CE
CMPSH-3SE
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODES
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Anode
2) No Connection
3) Cathode
MARKING CODE: D95E
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
MARKING CODE: DA5E
LEAD CODE:
1) Cathode D2
2) Cathode D1
3) Anode D1, D2
MARKING CODE: DB1E
CMPSH-3E CMPSH-3AE CMPSH-3SE
PIN CONFIGURATIONS
LEAD CODE:
1) Anode D2
2) Anode D1
3) Cathode D1, D2
MARKING CODE: DB2E
CMPSH-3CE
www.centralsemi.com
R3 (27-January 2010)
