© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 5 1Publication Order Number:
NSS1C301E/D
NSS1C301ET4G
100 V, 3.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V CE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
•Complement to NSS1C300ET4G
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Collector−Base Voltage VCBO 140 Vdc
Collector−Emitter Voltage VCEO 100 Vdc
Emitter−Base Voltage VEB 6.0 Vdc
Collector Current − Continuous IC3.0 Adc
Collector Current − Peak ICM 6.0 Adc
Base Current IB0.5 Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD33
0.26 W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD2.1
0.017 W
W/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
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100 VOLTS, 3.0 AMPS
12.5 WATTS
NPN LOW VCE(sat) TRANSISTOR
DPAK
CASE 369C
STYLE 1
123
4
MARKING DIAGRAM
Y = Year
WW = Work Week
1C31E = Device Code
G = Pb−Free
YWW
1C31EG
COLLECTOR
2, 4
1
BASE
3
EMITTER
Device Package Shipping†
ORDERING INFORMATION
NSS1C301ET4G DPAK
(Pb−Free) 2500/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NSV1C301ET4G DPAK
(Pb−Free) 2500/
Tape & Reel
NSS1C301ET4G
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 3.8 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 59.5 °C/W
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mA, IB = 0) V(BR)CEO 100 − − V
Collector−Base Breakdown Voltage
(IC = 0.1 mA, IE = 0) V(BR)CBO 140 − − V
Emitter−Base Breakdown Voltage
(IE = 0.1 mA, IC = 0) V(BR)EBO 6.0 − − V
Collector Cutoff Current
(VCB = 140 V, IE = 0) ICBO − − 0.1 mA
Emitter Cutoff Current
(VEB = 6.0 V) IEBO − − 0.1 mA
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 0.1 A, VCE = 2.0 V)
(IC = 0.5 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 3.0 A, VCE = 2.0 V)
hFE 200
200
120
80
−
−
−
−
−
−
360
−
−
Collector−Emitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 10 mA)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
(IC = 3.0 A, IB = 0.300 A)
VCE(sat) −
−
−
−
0.015
0.045
0.080
0.115
0.050
0.090
0.150
0.250
V
Base−Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 0.1 A) VBE(sat) − − 1.0 V
Base−Emitter Turn−on Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V) VBE(on) − − 0.90 V
Cutoff Frequency
(IC = 500 mA, VCE = 10 V, f = 100 MHz) fT− 120 − MHz
Input Capacitance
(VEB = 5.0 V, f = 1.0 MHz) Cibo − 360 − pF
Output Capacitance
(VCB = 10 V, f = 1.0 MHz) Cobo − 30 − pF
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NSS1C301ET4G
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3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
1010.10.01
0
50
150
200
300
350
450
500
1010.10.01
0
0.1
0.2
0.3
0.4
Figure 3. Collector−Emitter Saturation
Voltage Figure 4. Collector−Emitter Saturation
Voltage
IC, COLLECTOR CURRENT (A)
1010.10.01
0
0.1
0.2
0.3
0.4
Figure 5. Base−Emitter Saturation Voltage Figure 6. Base−Emitter “On” Voltage
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
1010.10.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1010.10.01
0
0.2
0.4
0.6
0.8
1.0
1.2
hFE, DC CURRENT GAIN
VBE(on), BASE−EMITTER
ON VOLTAGE (V)
100
250
400
VCE = 2 V
150°C
25°C
−55°C
150°C
25°C
−55°C
IC/IB = 10
IC, COLLECTOR CURRENT (A)
1010.10.01
0
50
150
200
300
350
450
500
hFE, DC CURRENT GAIN
100
250
400
VCE = 5 V
150°C
25°C
−55°C
150°C
25°C
−55°C
IC/IB = 50
150°C
25°C
−55°C
IC/IB = 10 VCE = 2 V
150°C
25°C
−55°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
NSS1C301ET4G
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4
TYPICAL CHARACTERISTICS
Figure 7. Collector Saturation Region Figure 8. Capacitance
IB, BASE CURRENT (mA) VR, REVERSE VOLTAGE (V)
10,0001,0001001010.1
0
0.2
0.4
0.6
1.0
1.2
1.4
1.6
1001010.1
10
100
1,000
Figure 9. Current−Gain−Bandwidth Product Figure 10. Safe Operating Area
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
1010.10.01
10
100
1,000
100101
0.01
0.1
1
10
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
C, CAPACITANCE (pF)
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
IC, COLLECTOR CURRENT (A)
0.8
TA = 25°C
IC = 0.1 A
IC = 0.5 A
IC = 1 A
IC = 2 A
IC = 3 A
Cib
Cob
VCE = 5 V
1 S
10 mS
100 mS
1 mS
100 mS
Single Pulse Test at TA = 25°C
Figure 11. Typical Transient Thermal Response, Junction−to−Case
t, PULSE TIME (s)
R(t), TRANSIENT THERMAL RESPONSE
(°C/W)
D = 0.5
0.1
0.05
0.01
Single Pulse
0.2
0.02
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 1
0
RqJC(t) = r(t) RqJC
RqJC = 3.8°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
NSS1C301ET4G
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5
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
b
D
E
b3
L3
L4 b2
eM
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DET AIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
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