T4-LDS-0168-1, Rev. 1 (120776) ©2012 Microsemi Corporation Page 1 of 5
1N5807US, 1N58 0 9 US, 1N5811US and URS
Available on
commercial
versions
VOID-LESS HERM E TICALL Y SEALED ULTRAFAS T
RECOVERY GLASS RECTIF I ERS
Qualified per MIL-PRF-19500/477
Quali f i ed Lev els:
JAN, JANT X,
JANTX V and JANS
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rec tifiers
with working peak reverse voltages from 50 t o 150 vol ts ar e h er m e t i cal ly sealed wi th v oi d -less glass
construction using an internal “Category 1” metallurgical bond. These devices are available in both
surface mount MELF and leaded p ac k age c o nfi g urations. Mi c r osem i al s o o ffer s numerou s ot her
rectifier products to meet higher and lower current ratings with various recovery time requirements
including standard, fast and ultrafast device types in both through-hole and surface mount
packages.
“B” MEL F
Package (US)
“B” MEL F
Package ( URS )
Also available in:
“B” Package
(axial-leaded)
1N5807, 09 and 11
Important: For the latest information, vis it our web site http://www.microsemi.com.
FEATURES
• JEDEC registered surface mount equival ent of 1N5807, 1N5809, 1N5811 series.
• Void-l ess hermetically sealed glass package.
• Quadruple-layer passivation.
• Extremely robust construction.
• Internal “Category 1” metallurgical bonds.
• JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/477.
• RoHS com pliant versions available (commercial grade only).
APPL ICAT IONS / BENEFITS
• Ultrafast recovery 6 amp rectifier series from 50 to 150 V.
• Military, space and other high-reliabili ty applications.
• Switching power supplies or other applications requiring extremely fast switching & low forward
loss.
• High forward surge current capability.
• Low thermal resistance.
• Controlled aval anche with peak reverse power capability.
• Inherently radiation hard as described in Microsemi MicroNote 050.
MAXIMUM RATINGS @ TA= 25 oC unless otherwise specif ied
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-End Cap Figure 1
RӨJEC
6.5
oC/W
Thermal Resistance
RӨJX
52
oC/W
Working Peak Reverse Voltage:
1N5807
1N5809
1N5811
VRWM
50
100
150
V
Forward Surge Current (3)
IFSM
125
A
Average Rectified Output Current
@ TL = +75
o
C at 3/8 inch lead length
(1)
IO1 6.0 A
Average Rectified Output-Current
@ TA = +55
o
C at 3/8 inch lead length
(2)
IO2 3.0 A
Capacitance @ VR = 10 V, f = 1 MHz; Vsig = 50 mV (p-p)
CJ
60
pF
Reverse Recovery Time (4)
trr
30
ns
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. IO1 is rated at TEC = 75 °C. Der ate at 60 mA/ºC for TEC above 75 ºC.
2. IO2 is derated at 25 mA/ºC above TA = 55 oC for PC boards where thermal resistance from mounting
po int to ambie nt is s uff i ci ent ly co nt ro lled w here TJ(max) 175 oC is not exceeded.
3. TA = 25 oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals.
4. IF = 1.0 A, IRM = 1.0 A, IR(REC) = .0.10 A and di/dt = 100 A/µs min.
T4-LDS-0168-1, Rev. 1 (120776) ©2012 Microsemi Corporation Page 2 of 5
1N5807US, 1N58 0 9 US, 1N5811US and URS
• CASE: Hermeticall y sealed void-less har d gla ss with tungsten slugs .
• TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commerci al grade only) over nickel plate ov er copper.
• MARKING: Body coated in blue with part number.
• POLARITY: Cathode indicated by band.
• TAPE & REEL opti on: Standard per EIA-296. Consult fac tory for quantities.
• WEIGHT: 539 milligrams.
• See Package Dimensions on last page.
JAN 1N5807 US (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(See Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface mount Package Type
US = 2 Square end caps
URS = 1 Square + 1 Round end
cap
SYMBOLS & DE FINITI ONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The m inimum voltage the devi ce will exhi bit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
IO
Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and
a 180 degree conduction angle.
VF
Maximum Forward Voltage: The maximum forward vol tage the device will exhibit at a specified current.
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs.
BREAKDOWN
VOLTAGE
(MIN.)
@ 100
µ
A
V(BR)
MAXIMUM FORWARD
VOLTAGE
@ 4 A (8 .3 ms pulse )
VFM
REVERSE
CURRENT
(MAX.)
@ VRWM
IR
SURGE
CURRENT
(MAX)
IFSM
(Note 1)
REVERSE
RECOVERY
T IME ( MAX)
trr
(Note 2)
TYPE
Volts
Volts
µA
Amps
ns
25 oC
125 oC
25 oC
125 oC
1N5807
60
0.875
0.800
5
525
125
30
1N5809
110
0.875
0.800
5
525
125
30
1N5811
160
0.875
0.800
5
525
125
30
NOTES: 1. TA = 25 oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals.
2. IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min.
T4-LDS-0168-1, Rev. 1 (120776) ©2012 Microsemi Corporation Page 3 of 5
1N5807US, 1N58 0 9 US, 1N5811US and URS
Heating Time (sec)
FIGURE 1
Max i mum Th er mal Imped anc e
IO (A)
FIGURE 2
Rectifier Power vs IO (Average Forward Current)
Theta (oC/W)
P
O
(W)
T4-LDS-0168-1, Rev. 1 (120776) ©2012 Microsemi Corporation Page 4 of 5
1N5807US, 1N58 0 9 US, 1N5811US and URS
Pad Area p er Pad (sq in)
FIGURE 3
Thermal Resistance vs FR4 Pad Area At Ambient
PCB horizontal (for each pad) with 1, 2, and 3 oz copper
VF (V)
FIGURE 4
Forward Volt age vs Forward Current
I
F
(V)
Thermal Resistance (oC/W)
T4-LDS-0168-1, Rev. 1 (120776) ©2012 Microsemi Corporation Page 5 of 5
1N5807US, 1N58 0 9 US, 1N5811US and URS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Di mens ions ar e pr e-solder dip.
4. Minimum clearance of glass body to mounting surface on all
orientations.
5. Cathode marking to be either in color band, three dots spaced equally
or a color dot on the face of the end tab.
6. Color dots will be .020 inch (0.51 mm) diameter minimum and those
on the face of the end tab shall not li e withi n .020 inch (0.51 mm) of
the mounting surface.
7. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
8. On “URS” one end cap shall be square and the other end cap shall be
round.
DIMENSIONS
Ltr
INCH
MILLIMETERS
Notes
Min
Max
Min
Max
BD
.137
.148
3.48
3.76
8
BL
.200
.225
5.08
5.72
ECT
.019
.028
0.48
0.71
8
S
.003
0.08
NOTE: If mounting requires adhesive separate from the s older, an additional 0.080 inch
diameter contact may be placed in the center between the pads as an opt ional spot
for cement.
DIM
INCH
MILLIMETERS
A
0.288
7.32
B
0.070
1.78
C
0.155
3.94