T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Page 1 of 9
2N7224U, 2N7225U, 2N7227U & 2N7228U
Compliant N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/592
Qualified Levels:
JAN, JANT X, and
JANTXV
DESCRIPTION
This family of switching transistors is military qualified up to the JANTXV level for high-
relia bi li ty applic a tions . These devices are also available in a thru hole TO-254AA package.
Microsemi also offers numerous other transistor products to meet higher and lower power
ratings with various switching speed requirements in both through-hole and surface-mount
packages.
U (SMD-1 or
TO-267AB)
Package
Also available in:
TO-254AA package
(leaded)
2N7224 & 2N7228
Important: For the latest information, vis it our website http://www.microsemi.com.
FEATURES
• Surface mount equivalent of JEDEC registered 2N 7224, 2N7225, 2N7227 and 2N7228 number
series.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/592.
(See part nomenclature for all available options.)
• RoHS compliant by design.
APPLICATIONS / BENEFITS
• Low-profile design.
• Military and other high-reliabi lity applica tions.
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions
Symbol
Value
Unit
Operating & Storage Junction Temperature Range
TJ & Tstg
-55 to +150
°C
Thermal Resi stan ce Jun cti on-to-Case
RӨJC
0.83
oC/W
Total Power Dissipation
@ TA = +25 °C
(1)
PT 4
150
W
Gate-Source Voltage, dc
VGS
± 20
V
Drain Current, dc @ TC = +25 ºC
(2)
2N7224U
2N7225U
2N7227U
2N7228U
ID1
34.0
27.4
14.0
12.0
A
Drain Current, dc @ TC = +100 ºC
(2)
2N7224U
2N7225U
2N7227U
2N7228U
ID2
21
17
9
8
A
Off-State Current (Peak Total Value)
(3)
2N7224U
2N7225U
2N7227U
2N7228U
IDM
136
110
56
48
A (pk)
Source Current
2N7224U
2N7225U
2N7227U
2N7228U
IS
34.0
27.4
14.0
12.0
A
NOTES: 1. Derated linearly by 1.2 W/ºC fo r TC > +25 ºC.
2. The foll owing form ul a derives the maximum theoret ical ID limit. I D is limit ed by package and internal
wires and may also be limited by pin diameter:
3. IDM = 4 x I D1 as calculated in note 2.
T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Page 2 of 9
2N7224U, 2N7225U, 2N7227U & 2N7228U
MECHANICAL and PACKAGING
• CASE: Ceramic and gold over nickel plated steel.
• TERMINALS: Gold over nickel plated tungsten/copper.
• MARKING: Part number, date code, A = anode.
• WEIGHT: 0.9 gra ms.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N7224 U
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
SMD Surface Mount Package
JEDEC type number
(see Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Symbol
Definition
di/dt
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
IF
Forward current
RG
Gate drive impedance
VDD
Drain supply voltage
VDS
Drain source voltage, dc
VGS
Gate source volta ge, dc
T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Page 3 of 9
2N7224U, 2N7225U, 2N7227U & 2N7228U
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Drain-S our ce Br eakdown Volta ge
VGS = 0 V, ID = 1.0 mA
2N7224U
2N7225U
2N7227U
2N7228U
V(BR)DSS
100
200
400
500
V
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25 mA
VDS ≥ VGS, ID = 0.25 mA, TJ = +125°C
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
V
Gate Current
VGS = ± 20 V, VDS = 0 V
VGS = ± 20 V, VDS = 0 V, TJ = +125°C
IGSS1
IGSS2
±100
±200 nA
Drain Current
VGS = 0 V, VDS = 80 V
VGS = 0 V, VDS = 160 V
VGS = 0 V, VDS = 320 V
VGS = 0 V, VDS = 400 V
2N7224U
2N7225U
2N7227U
2N7228U
IDSS1
25
µA
Drain Current
VGS = 0 V, VDS = 80 V, TJ = +125 °C
VGS = 0 V, VDS = 160 V, TJ = +125 °C
VGS = 0 V, VDS = 320 V, TJ = +125 °C
VGS = 0 V, VDS = 400 V, TJ = +125 °C
2N7224U
2N7225U
2N7227U
2N7228U
IDSS2
0.25
mA
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 21.0 A pulsed
VGS = 10 V, ID = 17.0 A pulsed
VGS = 10 V, ID = 9.0 A pulsed
VGS = 10 V, ID = 8.0 A pulsed
2N7224U
2N7225U
2N7227U
2N7228U
rDS(on)1
0.070
0.100
0.315
0.415
Ω
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 34.0 A pulsed
VGS = 10 V, ID = 27.4 A pulsed
VGS = 10 V, ID = 14.0 A pulsed
VGS = 10 V, ID = 12.0 A pulsed
2N7224U
2N7225U
2N7227U
2N7228U
rDS(on)2
0.081
0.105
0.415
0.515
Ω
Static Drain-Source On-State Resistance
TJ = +125°C
VGS = 10 V, ID = 21.0 A pulsed
VGS = 10 V, ID = 17.0 A pulsed
VGS = 10 V, ID = 9.0 A pulsed
VGS = 10 V, ID = 8.0 A pulsed
2N7224U
2N7225U
2N7227U
2N7228U
rDS(on)3
0.11
0.17
0.68
0.90
Ω
Diode Forward Voltage
VGS = 0 V, ID = 34.0 A pulsed
VGS = 0 V, ID = 27.4 A pulsed
VGS = 0 V, ID = 14.0 A pulsed
VGS = 0 V, ID = 12.0 A pulsed
2N7224U
2N7225U
2N7227U
2N7228U
VSD
1.8
1.9
1.7
1.7
V
T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Page 4 of 9
2N7224U, 2N7225U, 2N7227U & 2N7228U
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
DYN AMIC CH AR ACTE RISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
VGS = 10 V, ID = 34.0 A, VDS = 50 V
VGS = 10 V, ID = 27.4 A, VDS = 50 V
VGS = 10 V, ID = 14.0 A, VDS = 50 V
VGS = 10 V, ID = 12.0 A, VDS = 50 V
2N7224U
2N7225U
2N7227U
2N7228U
Qg(on)
125
115
110
120
nC
Gate to Source Charge
VGS = 10 V, ID = 34.0 A, VDS = 50 V
VGS = 10 V, ID = 27.4 A, VDS = 50 V
VGS = 10 V, ID = 14.0 A, VDS = 50 V
VGS = 10 V, ID = 12.0 A, VDS = 50 V
2N7224U
2N7225U
2N7227U
2N7228U
Qgs
22
22
18
19
nC
Gate to Drain Charge
VGS = 10 V, ID = 34.0 A, VDS = 50 V
VGS = 10 V, ID = 27.4 A, VDS = 50 V
VGS = 10 V, ID = 14.0 A, VDS = 50 V
VGS = 10 V, ID = 12.0 A, VDS = 50 V
2N7224U
2N7225U
2N7227U
2N7228U
Qgd
65
60
65
70
nC
SWITCHING CHARACTERISTI CS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-on delay time
ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V
2N7224U
2N7225U
2N7227U
2N7228U
td(on)
35
ns
Rinse time
ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V
2N7224U
2N7225U
2N7227U
2N7228U
tr
190
ns
Turn-off delay time
ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V
2N7224U
2N7225U
2N7227U
2N7228U
td(off)
170
ns
Fall time
ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V
2N7224U
2N7225U
2N7227U
2N7228U
tf
130
ns
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 34.0 A
di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 27.4 A
di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 14.0 A
di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 12.0 A
2N7224U
2N7225U
2N7227U
2N7228U
trr
500
950
1200
1600
ns
T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Page 5 of 9
2N7224U, 2N7225U, 2N7227U & 2N7228U
GRAPHS
t1, Rectangle Pulse Duration (seconds)
FIGURE 1
Thermal Impedance Curves
Thermal Response (ZθJC)
T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Page 6 of 9
2N7224U, 2N7225U, 2N7227U & 2N7228U
GRAPHS (continued)
FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs
TC CASE TEMPERATURE (ºC) TC CASE TEMPERATURE (ºC)
For 2N7224U For 2N7225U
TC CASE TEMPERATURE (ºC) TC CASE TEMPERATURE (ºC)
For 2N7227U For 2N72 28U
I
D
DRAIN CURRENT (AMPERES)
I
D
DRAIN CURRENT (AMPERES)
I
D
DRAIN CURRENT (AMPERES)
I
D
DRAIN CURRENT (AMPERES)
T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Page 7 of 9
2N7224U, 2N7225U, 2N7227U & 2N7228U
GRAPHS (continued)
FIGURE 3 – Maximum Safe Operating Area
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7224U
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7225U
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Page 8 of 9
2N7224U, 2N7225U, 2N7227U & 2N7228U
GRAPHS (continued)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7227U
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7228U
ID DRAIN CURRENT (AMPERES)
ID DRAIN CURRENT (AMPERES)
T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Page 9 of 9
2N7224U, 2N7225U, 2N7227U & 2N7228U
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeter s ar e given for ge neral information only.
3. The lid shall be electrically isolated from the drain, gate and source.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
Symbol
DIMENSIONS
INCH
MILLIMETERS
Min
Max
Min
Max
BL
.620
.630
15.75
16.00
BW
.445
.455
11.30
11.56
CH
-
.142
-
3.60
LH
.010
.020
.026
.050
LL1
.410
.420
10.41
10.67
LL2
.152
.162
3.86
4.11
LS1
.210 BSC
5.33 BSC
LS2
.105 BSC
2.67 BSC
LW1
.370
.380
9.40
9.65
LW2
.135
.145
3.43
3.68
Q1
.030
-
0.76
-
Q2
.035
-
0.89
-
Term 1
Drain
Term 2
Gate
Term 3
Source