V
RRM
= 50 V - 200 V
I
F(AV)
= 200 A
Features
• High Surge Capability Twin Tower Package
• Types from 50 V to 200 V V
RRM
• Not ESD Sensitive
Parameter Symbol MUR20005CT (R) MUR20010CT (R) Unit
Repetitive peak reverse voltage V
RRM
50 100 V
RMS reverse voltage V
RMS
35 70 V
MUR20005CT thru MUR20020CTR
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions MUR20020CT (R)
200
140
Silicon Super Fast
Recover
y
Diode
DC blocking voltage V
DC
50 100 V
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol MUR20005CT (R) MUR20010CT (R) Unit
Average forward current (per
pkg) I
F(AV)
200 200 A
Peak forward surge current (per
leg) I
FSM
2000 2000 A
Maximum instantaneous forward
voltage (per leg) 1.0 1.0
25 25 μA
33 mA
Maximum reverse recovery time
(per leg) T
rr
75 75 nS
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg) R
ΘJC
0.45 0.45 °C/W
T
C
= 140 °C 200
t
p
= 8.3 ms, half sine 2000
0.45
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
T
j
= 125 °C
V
75
3
T
j
= 25 °C
I
FM
= 100 A, T
j
= 25 °C
Conditions
200
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Maximum reverse current at
rated DC blocking voltage (per
leg)
I
R
V
F
MUR20020CT (R)
-55 to 150
-55 to 150
1.0
25
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1
MUR20005CT thru MUR20020CTR
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2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MUR20005CT thru MUR20020CTR
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