Data Sheet, Doc. No. 5SYA 1324-02 11 02
5SMY 12G1721
IGBT-Die
VCE = 1700 V
IC = 50 A
Ultra low loss thin IGBT die
Highly rugged SPT+ design
Large bondable emitter area
Passivation: Silicon Nitride plus Polyimide
Maximum rated values 1)
Symbol
Conditions
min
max
Unit
VCES
VGE = 0 V, Tvj ≥ 25 °C
1700
V
IC
50
A
ICM
100
A
VGES
- 20
20
V
tpsc
VCC = 1300 V, VCEM CHIP 1700 V
VGE 15 V, Tvj 150 °C
10
µs
Tvj
175
°C
Tvj(op)
-40
150
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2 5SMY 12G1721| Doc. No. 5SYA 1324-02 11 02
IGBT characteristic values 2)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector (-emitter) breakdown
voltage
V(BR)CES
VGE = 0 V, IC = 1 mA, Tvj = 25 °C
adequate environment
1700
V
Collector-emitter
saturation voltage
VCE sat
IC = 50 A, VGE = 15 V
Tvj = 25 °C
2.5
V
Tvj = 125 °C
3.0
V
Tvj = 150 °C
3.1
V
Collector cut-off current
ICES
VCE = 1700 V, VGE = 0 V
Tvj = 25 °C
0.1
mA
Tvj = 125 °C
0.2
mA
Tvj = 150 °C
0.9
mA
Gate leakage current
IGES
VCE = 0 V, VGE = 20 V, Tvj = 125 °C
- 500
500
nA
Gate-emitter threshold voltage
VGE(TO)
IC = 2 mA, VCE = VGE, Tvj = 25 °C
5.4
7.4
V
Gate charge
Qge
IC = 50 A, VCE = 900 V, VGE = 15 V .. 15 V
0.45
µC
Input capacitance
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
3.5
nF
Output capacitance
Coes
0.18
nF
Reverse transfer capacitance
Cres
0.12
nF
Turn-on delay time
td(on)
VCC = 900 V,
IC = 50 A,
RG = 22 ,
VGE = 15 V,
L = 540 nH, inductive load
Tvj = 25 °C
238
ns
Tvj = 125 °C
243
ns
Tvj = 150 °C
245
ns
Rise time
tr
Tvj = 25 °C
120
ns
Tvj = 125 °C
123
ns
Tvj = 150 °C
124
ns
Turn-off delay time
td(off)
VCC = 900 V,
IC = 50 A,
RG = 22 ,
VGE = 15 V,
L = 540 nH, inductive load
Tvj = 25 °C
390
ns
Tvj = 125 °C
470
ns
Tvj = 150 °C
495
ns
Fall time
tf
Tvj = 25 °C
160
ns
Tvj = 125 °C
175
ns
Tvj = 150 °C
177
ns
Turn-on switching energy
Eon
VCC = 900 V, IC = 50 A,
VGE = ± 15 V, RG = 22 ,
L = 540 nH, inductive load
Tvj = 25 °C
14
mJ
Tvj = 125 °C
18
mJ
Tvj = 150 °C
20
mJ
Turn-off switching energy
Eoff
VCC = 900 V, IC = 50 A,
VGE = ± 15 V, RG = 22 ,
L = 540 nH, inductive load
Tvj = 25 °C
20
mJ
Tvj = 125 °C
15
mJ
Tvj = 150 °C
16
mJ
Short circuit current
ISC
tpsc ≤ 10 µs, VGE = 15 V,
Tvj = 150 °C, VCC = 1300 V,
VCEM CHIP ≤ 1700 V
Tvj = 150 °C
150
A
2) Characteristic values according to IEC 60747 – 9
3 5SMY 12G1721| Doc. No. 5SYA 1324-02 11 02
0
25
50
75
100
0 1 2 3 4 5
VCE [V]
IC [A]
25 °C
125 °C
VGE = 15 V
150 °C
0
25
50
75
100
5 6 7 8 9 10 11 12 13 14 15
VGE [V]
IC [A]
25 °C
125 °C
VCE = VGE
150 °C
Fig. 1
Typical on-state characteristics, chip level
Fig. 2
Typical transfer characteristics, chip level
0.01
0.1
1
10
100
0 5 10 15 20 25 30 35
Vce[V]
C [nF]
VGE = 0 V
fOSC = 1 MHz
VOSC = 50
mV
Cies
Coes
Cres
0
5
10
15
20
0.00 0.10 0.20 0.30 0.40
Qg [µC]
VGE [V]
VCC = 900 V
VCC = 1300 V
IC = 50 A
Tvj = 25 °C
Fig. 3
Typical capacitances vs collector-emitter voltage
Fig. 4
Typical gate charge characteristics
4 5SMY 12G1721| Doc. No. 5SYA 1324-02 11 02
0.0
0.5
1.0
1.5
2.0
2.5
0500 1000 1500 2000
VCE [V]
ICpulse / IC
VCC 1200 V, Tvj(op) = 150 °C
VGE = ±15 V, RG = 22 ohm
Fig. 5
Safe operating area (RBSOA)
Mechanical properties 3)
Parameter
Symbol
Conditions
min
Unit
Dimensions
Overall die
L x W
8.61 x 8.58
mm
exposed front metal
L x W (except gate pad)
6.59 x 6.56
mm
gate pad
L x W
1.73 x 1.76
mm
thickness
209 ± 15
µm
Metallization 3)
front (E)
AlSi1
4
µm
back (C)
Al / Ti / Ni / Ag
1.6
µm
3) Package and mechanical properties according to IEC 60747 – 15
Outline drawing 4)
Note: all dimensions are shown in millimeters
4) For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
Related documents:
5SYA 2045 Thermal runaway during blocking
5SYA 2059 Applying IGBT and Diode dies
5SYA 2093-00 Thermal design of IGBT Modules
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Fax: +41 58 586 1306
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5SMY 12G1721 | 5SYA 1324-02 11 02