Data Sheet, Aug. 2005 BGA 622 Silicon Germanium W id e Ba n d L o w N o i s e A m p l i f ie r Silico n Discre te s N e v e r s t o p t h i n k i n g . Edition 2005-08-29 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2005 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA622 Data Sheet Revision History: 2005-08-29 Previous Version: 2002-12-18 Page Subjects (major changes since last revision) 5-6 Min. / max. limits added 6 Additional Table "Electrical Characteristics at TA= -30 ... +85C, Vcc=2.7 ... 2.9 V, Frequency=1.575 GHz" 5 Electrical Characteristics for On/Off - Switch added For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com Silicon Germanium Wide Band Low Noise Amplifier BGA622 Features 3 * High gain, |S21|2=14.8 dB at 1.575 GHz |S21|2=13.9 dB at 1.9 GHz |S21|2=13.3 dB at 2.14 GHz |S21|2=12.7 dB at 2.4 GHz * Low noise figure, NF=1.1 dB at 2.14 GHz * Operating frequency range 0.5 - 6 GHz * Typical supply voltage: 2.75 V * On/Off - Switch * Output-match on chip, input pre-matched * Low part count * 70 GHz fT - Silicon Germanium technology 4 2 1 VPS05605 Applications * LNA for GSM, GPS, DCS, PCS, UMTS, Bluetooth, ISM and WLAN Description Vcc,4 In,1 Out,3 On/Off 20 kOhm GND,2 The BGA622 is a wide band low noise amplifier, based on Infineon Technologies' Silicon Germanium Technology B7HF. In order to provide the LNA in a small package the out-pin is simultaneously used for RF out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open switches the device on and a DC level of Vcc switches the device off. While the device is switched off, it provides an insertion loss of 20 dB together with a high IIP3 up to 18 dBm. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Marking Chip BGA622 SOT343 BRs T0535 Data Sheet 4 2005-08-29 BGA622 Maximum Ratings Parameter Symbol Value Unit Voltage at pin Vcc Vcc 3.5 V Voltage at pin Out VOUT 4 V Current into pin In IIN 0.1 mA Current into pin Out IOUT 1 mA Current into pin Vcc IVcc 10 mA RF input power PIN 6 dBm Total power dissipation, TS < 139 C1) Ptot 35 mW Tj 150 C Ambient temperature range TA -65 ... +150 C Storage temperature range TSTG -65 ... +150 C Thermal resistance: junction-soldering point Rth JS 300 K/W Junction temperature 1) TS is measured on the ground lead at the soldering point Note: All Voltages refer to GND-Node Data Sheet 5 2005-08-29 BGA622 Electrical Characteristics at TA=25C (measured according to fig. 1) Vcc=2.75 V, Frequency=1.575 GHz, unless otherwise specified Parameter Insertion power gain Symbol min. typ. max. Unit |S21|2 12.7 14.8 16.7 dB -26 -24 dB 2 Insertion power gain (Off-State) |S21| Input Return Loss (On-State) Output Return Loss (On-State) Noise Figure (ZS=50) 1) RLIN 6 dB RLOUT 12 dB F50 1.0 Input Third Order Intercept Point (On-State) f=1MHz, PIN=-28dBm IIP3 Input Third Order Intercept Point1) (Off-State) f=1MHz, PIN=-8dBm IIP3 Input Power at 1dB Gain Compression P-1dB Total Device Off Current, VCC=2.75V, Vout=VCC dB 0 dBm 18 dBm -21 -16.5 dBm Itot-off 130 260 420 A Total Device On Current, VCC=2.75V Itot-on 4.0 5.8 7.8 mA On/Off - Switch Control Voltage, VCC=2.75V, ON-Mode Vout=Von OFF-Mode Vout=Voff Von Voff 0 2.0 - 0.8 3.5 V V 1) -4.5 1.5 IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 to 6 GHz Electrical Characteristics at TA= -30 ... +85C (measured according to fig. 1) Vcc=2.7 ... 2.9 V, Frequency=1.575 GHz, unless otherwise specified Parameter Insertion power gain Insertion power gain (Off-State) Input Return Loss (On-State) Output Return Loss (On-State) Symbol min. typ. max. Unit |S21|2 11.9 14.8 17.5 dB 2 |S21| -26 -24 dB RLIN 4.5 6 dB RLOUT 9 12 dB Noise Figure (ZS=50) F50 Input Third Order Intercept Point1) (On-State) f=1MHz, PIN=-28dBm IIP3 -5 0 Input Power at 1dB Gain Compression P-1dB -21 -16.5 Total Device On Current Itot-on 3.6 5.8 Data Sheet 6 1.0 1.8 dB dBm dBm 8.8 mA 2005-08-29 BGA622 Electrical Characteristics at TA=25C (measured according to fig. 1) Vcc=2.75 V, Frequency=2.14 GHz, unless otherwise specified Parameter Insertion power gain Symbol min. typ. max. Unit |S21|2 11.4 13.3 15.0 dB -22 -20 dB 2 Insertion power gain (Off-State) |S21| Input Return Loss (On-State) Output Return Loss (On-State) Noise Figure (ZS=50) 1) RLIN 8 dB RLOUT 10 dB F50 1.1 Input Third Order Intercept Point (On-State) f=1MHz, PIN=-28dBm IIP3 Input Third Order Intercept Point1) (Off-State) f=1MHz, PIN=-8dBm IIP3 Input Power at 1dB Gain Compression P-1dB 1) -1 -17 1.6 dB 3 dBm 18 dBm -13 dBm IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 to 6 GHz DC, 2.75V DC, 2.75V Out, 50 Out 47pF (DC-Block) 150pF RFC 150pF On/Off Switch DC, 2.75V In, 50 2.2nH (for improved input match) 47pF (DC-Block) Figure 1 S-Parameter Test Circuit (loss-free microstrip test-fixture) In Figure 2 Application Circuit for 1800 - 2500 MHz Data Sheet 7 2005-08-29 BGA622 Power Gain |S |2, G = f(f) 21 ma V = 2.75V, I = 5.8mA CC tot-on Off Gain |S |2 = f(f) 21 V = 2.75V, V = 2.75V, I CC 25 OUT tot-off = 0.3mA 0 -5 Gma 20 -10 -15 21 |S21|2 [dB] |S21|2, Gma [dB] 2 |S | 15 -20 -25 10 -30 -35 5 -40 0 -45 0 1 2 3 4 5 6 0 1 Frequency [GHz] Reverse Isolation |S | = f(f) 12 V = 2.75V, I = 5.8mA CC tot-on 3 4 5 6 5 6 Matching |S |, |S | = f(f) 11 22 V = 2.75V, I = 5.8mA CC tot-on 0 0 -2 -5 S -4 -10 11 -6 S22 -8 |S11|, |S22| [dB] -15 |S12| [dB] 2 Frequency [GHz] -20 -25 -30 -10 -12 -14 -16 -18 -35 -20 -40 -22 -45 -24 0 1 2 3 4 5 6 0 Frequency [GHz] Data Sheet 1 2 3 4 Frequency [GHz] 8 2005-08-29 BGA622 Stability K, B = f(f) 1 V = 2.75V, I = 5.8mA CC tot-on Noise Figure F = f(f) V = 2.75V, I = 5.8mA, ZS = 50 CC tot-on 4 1.8 1.7 3.5 K 1.6 3 1.5 1.4 F [dB] K, B1 2.5 2 1.3 1.2 1.5 B1 1.1 1 1 0.5 0.9 0 0.8 0 1 2 3 4 5 6 0 1 Frequency [GHz] 2 3 4 5 6 Frequency [GHz] Input Compression Point P = f(V ) Device Current I = f(T , V ) -1dB CC tot-on A CC f = 2.14GHz, T = -40 ... +85C V = parameter in V A CC -11 8.5 3.4 8 -11.5 3.2 7.5 Itot-on [mA] P-1dB [dBm] -12 -12.5 7 6.5 3 2.8 -13 6 2.6 -13.5 -14 2.6 5.5 2.8 3 3.2 5 -40 3.4 VCC [V] Data Sheet -20 0 20 40 60 80 TA [C] 9 2005-08-29 BGA622 Power Gain |S21|2 = f(T A, VCC) f = 2.14GHz, V = parameter in V Device Current Itot-on = f(VCC, T A) T = parameter in C A CC 8.5 15 8 14.5 7.5 7 13.5 21 |S |2 [dB] Itot-on [mA] 14 6.5 3.4 13 6 3 -40 20 12.5 5.5 2.6 85 5 2.6 2.8 3 3.2 12 -40 3.4 -20 0 20 VCC [V] 40 60 80 TA [C] Power Gain |S |2 = f(V , T ) 21 CC A f = 2.14GHz, T = parameter in C Package Outline A 15 2 0.2 0.9 0.1 B 1.3 0.1 0.20 M 0.1 max B 14.5 2 1.25 0.1 1 +0.2 acc. to DIN 6784 2.10.1 3 -40 0.15 +0.1 -0.05 0.3 +0.1 13.5 0.6 +0.1 21 |S |2 [dB] 14 A 4 20 0.20 M A GPS05605 13 12.5 85 12 2.6 2.8 3 3.2 3.4 VCC [V] Data Sheet 10 2005-08-29