BGA622
Silicon Germanium
Wide Band Low Noise Amplifier
Data Sheet, Aug. 2005
Never stop thinking.
Silicon Discretes
Edition 2005-08-29
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2005
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted char-
acteristics.
Terms of delivery and rights to t echnical change res erved.
We hereby discla im any and all warr anties, includi ng but not limited to warranties of non-infringement, regarding
circuits, descr ipti o ns and cha rts stated her ein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infin-
eon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon T echnologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
BGA622
Data Sheet
Revision History: 2005-08-29
Previous Version: 2002-12-18
Page Subjects (major changes since last revision)
5 - 6 Min. / max. limits added
6 Addit ion al Tab le “Elec tri cal Charac teri sti cs at TA= -30 ... +85°C,
Vcc=2.7 ... 2.9 V, Frequency=1.575 GHz”
5 Electrical Characteristics for On/Off - Switch added
Data Sheet 4 2005-08-29
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Marking Chip
BGA622 SOT343 BRs T0535
Silicon Germanium
Wide Band Low Noise Amplifier BGA622
VPS05605
4
2
1
3
Features
• High gain, |S21|2=14.8 dB at 1.575 GHz
|S21|2=13.9 dB at 1.9 GHz
|S21|2=13.3 dB at 2.14 GHz
|S21|2=12.7 dB at 2.4 GHz
• Low noise figure, NF=1.1 dB at 2.14 GHz
• Operating frequency range 0.5 - 6 GHz
• Typical supply voltage: 2.75 V
• On/Off - Switch
• Output-match on chip, input pre-matched
• Low part count
•70 GHz f
T - Silicon Germanium technology
Applications
• LNA for GSM, GPS, DCS, PCS, UMTS, Bluetooth, ISM and WLAN
Vcc,4
Out,3
GND,2
In,1
On/Off
20 kOhm
Description
The BGA622 is a wide band low noise
amplifier, based on Infineon Technologies’
Silicon Germanium Technology B7HF. In
order to provid e the LNA in a small packag e
the out-pi n is simultaneously used for RF out
and On/Off switch. This functionality can be
accessed using a RF-Choke at the Out pin,
where a D C level of 0 V o r an open sw itches
the device on and a DC level of Vcc
switches the device off. While the device is
switched off, it provides an insertion loss of
20 dB together with a high IIP3 up to
18 dBm.
Parameter Symbol Value Unit
Voltage at pin Vcc Vcc 3.5 V
Voltage at pin Out VOUT 4 V
Current into pin In IIN 0.1 mA
Current into pin Out IOUT 1mA
Current into pin Vcc IVcc 10 mA
RF input po wer PIN 6dBm
Total power dissipation, TS < 139 ° C
1) TS is measured on the ground lead at the soldering point
1) Ptot 35 mW
Junction temperature Tj150 °C
Ambient tem per ature range TA-65 ... +150 °C
Storage temperature range TSTG -65 ... +150 °C
Thermal resistance: junction-soldering point Rth JS 300 K/W
BGA622
Data Sheet 5 2005-08-29
Maximum Ratings
Note: All Voltages refer to GND-Node
BGA622
Data Sheet 6 2005-08-29
Electrical Characteristics at TA=25°C (measured according to fig. 1)
Vcc=2.75 V, Frequency=1.575 GHz, unless otherwise specified
Parameter Symbol min. typ. max. Unit
Insertion power gain |S21|212.7 14.8 16.7 dB
Insertion power gain (Off-State) |S21|2-26 -24 dB
Input Return Loss (On-State) RLIN 6dB
Output Return Loss (On-State) RLOUT 12 dB
Noise Figure (ZS=50Ω) F50Ω1.0 1.5 dB
Input Thi rd Order Inte rcept Point
1) IP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.1 to 6 GHz
1) (On-State)
∆f=1MHz, PIN=-28dBm IIP3-4.5 0dBm
Input Thi rd Order Inte rcept Point1) (Off-State)
∆f=1MHz, PIN=-8dBm IIP318 dBm
Input Power at 1dB Gain Compression P-1dB -21 -16.5 dBm
Total Device Off Current, VCC=2.75V,
Vout=VCC
Itot-off 130 260 420 µA
Total Device On Current, VCC=2.75V Itot-on 4.0 5.8 7.8 mA
On/Off - Swi tch Control Voltag e, VCC=2.75V,
ON-Mode Vout=Von
OFF-Mode Vout=Voff
Von
Voff
0
2.0 -
-0.8
3.5 V
V
Electrical Characteristics at TA= -30 ... +85°C (measured according to fig. 1)
Vcc=2.7 . .. 2.9 V , Frequency=1.575 GHz, unless otherwis e specified
Parameter Symbol min. typ. max. Unit
Insertion power gain |S21|211.9 14.8 17.5 dB
Insertion power gain (Off-State) |S21|2-26 -24 dB
Input Return Loss (On-State) RLIN 4.5 6dB
Output Return Loss (On-State) RLOUT 912 dB
Noise Figure (ZS=50Ω) F50Ω1.0 1.8 dB
Input Thi rd Order Inte rcept Point1) (On-State)
∆f=1MHz, PIN=-28dBm IIP3-5 0dBm
Input Power at 1dB Gain Compression P-1dB -21 -16.5 dBm
Total Device On Cur rent Itot-on 3.6 5.8 8.8 mA
BGA622
Data Sheet 7 2005-08-29
Electrical Characteristics at TA=25°C (measured according to fig. 1)
Vcc=2.75 V, Frequency=2.14 GHz, unless otherwise specified
Parameter Symbol min. typ. max. Unit
Insertion power gain |S21|211.4 13.3 15.0 dB
Insertion power gain (Off-State) |S21|2-22 -20 dB
Input Return Loss (On-State) RLIN 8dB
Output Return Loss (On-State) RLOUT 10 dB
Noise Figure (ZS=50Ω) F50Ω1.1 1.6 dB
Input Thi rd Order Inte rcept Point
1) IP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.1 to 6 GHz
1) (On-State)
∆f=1MHz, PIN=-28dBm IIP3-1 3dBm
Input Thi rd Order Inte rcept Point1) (Off-State)
∆f=1MHz, PIN=-8dBm IIP318 dBm
Input Power at 1dB Gain Compression P-1dB -17 -13 dBm
Figure 1 S-Parameter Test
Circuit (loss-free microstrip
test-fixture)
Figure 2 Application Circuit
for 1800 - 2500 MHz
DC,
2.75V
150pF
Out, 50
Ω
In, 50
Ω
DC,
2.75V
150pF
Out
In
2.2nH (for improved input match)
47pF (DC-Block)
DC,
2.75V
RFC
On/Off
Switch
47pF (DC-Block)
BGA622
Data Sheet 8 2005-08-29
Reverse Isolation |S12| = f(f)
VCC = 2.75V, I tot−on = 5.8mA
0 1 2 3 4 5 6
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
Frequency [GHz]
|S
12
| [dB]
Matching |S11|, |S22| = f(f)
VCC = 2.75V, I tot−on = 5.8mA
0 1 2 3 4 5 6
−24
−22
−20
−18
−16
−14
−12
−10
−8
−6
−4
−2
0
Frequency [GHz]
|S
11
|, |S
22
| [dB]
S
11
S
22
Off Gain |S21|2 = f(f)
VCC = 2.75V, VOUT = 2.75V, I tot−off = 0.3m
A
0 1 2 3 4 5 6
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
Frequency [GHz]
|S
21
|
2
[dB]
Power Gain |S21|2, Gma = f(f)
VCC = 2.75V, I tot−on = 5.8mA
0 1 2 3 4 5 6
0
5
10
15
20
25
Frequency [GHz]
|S
21
|
2
, G
ma
[dB]
|S
21
|
2
G
ma
BGA622
Data Sheet 9 2005-08-29
Input Compression Point P−1dB = f(VCC)
f = 2.14GHz, T A = −40 ... +85°C
2.6 2.8 3 3.2 3.4
−14
−13.5
−13
−12.5
−12
−11.5
−11
V
CC
[V]
P
−1dB
[dBm]
Device Current Itot−on = f(T A, VCC)
V CC = parameter in V
−40 −20 020 40 60 80
5
5.5
6
6.5
7
7.5
8
8.5
T
A
[°C]
I
tot−on
[mA]
2.6
2.8
3
3.2
3.4
Stability K, B1 = f(f)
VCC = 2.75V, I tot−on = 5.8mA
0 1 2 3 4 5 6
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency [GHz]
K, B
1
K
B1
Noise Figure F = f(f)
VCC = 2.75V, I tot−on = 5.8mA, ZS = 50Ω
0 1 2 3 4 5 6
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
Frequency [GHz]
F [dB]
BGA622
Data Sheet 10 2005-08-29
Package Outline
GPS05605
1.25
±0.1
0.1 max
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
±0.1
1.3
2
±0.2
B
±0.1
0.9
12
34 A
+0.1
0.6
acc. to
+0.2
DIN 6784
A
M
0.20
0.20
M
B
Power Gain |S21|2 = f(VCC, T A)
f = 2.14GHz, T A = parameter in °C
2.6 2.8 3 3.2 3.4
12
12.5
13
13.5
14
14.5
15
V
CC
[V]
|S
21
|
2
[dB]
−40
20
85
Device Current Itot−on = f(VCC, T A)
T A = parameter in °C
2.6 2.8 3 3.2 3.4
5
5.5
6
6.5
7
7.5
8
8.5
V
CC
[V]
I
tot−on
[mA]
−40
20
85
Power Gain |S21|2 = f(T A, VCC)
f = 2.14GHz, V CC = parameter in V
−40 −20 020 40 60 80
12
12.5
13
13.5
14
14.5
15
T
A
[°C]
|S
21
|
2
[dB]
2.6
3
3.4
