NTE3046
Optoisolator
SCR Photothyristor Output
Description:
The NTE3046 consists of a photo SCR coupled to a gallium arsenide infrared diode in a 6–Lead DIP
type plastic package.
Features:
DBuilt–In Memory
DAC Switch (SPST)
DHigh Current Carrying Capability
Absolute Maximum Ratings:
LED (GaAs Diode)
Reverse Voltage 3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current
Continuous 60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (50µs pulse, 120 pps) 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (TA = +25°C) 90mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above 25°C 1.2mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Detector (Photo SCR)
DC Anode Current 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Pulse Current (100µs pulse, 120 pps) 1.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Current 25mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Gate Current 1.0mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Anode Voltage (DC or Peak AC) 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (TA = +25°C) 200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above 25°C 2.67mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device
Isolation Surge Voltage 3550V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (TA = +25°C) 250mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above 25°C 3.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range –30° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering for 7sec) +260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Input Diode
Forward Voltage VFIF = 20mA –1.25 1.5 V
Reverse Voltage VRIR = 10µA3.0 – – V
Junction Capacitance CJVR = 0 –50 –pF
Detector
Forward Leakage Current IFX VFX = Rated VFX, RGK = 27kΩ–0.02 2.0 µA
Reverse Leakage Current IRX VRX = Rated VRX, RGK = 27kΩ–0.02 2.0 µA
Forward Blocking Voltage VFSM, VDM RGK = 10kΩ, TA = +100°C400 – – V
Reverse Blocking Voltage VROM 400 – – V
ON Voltage VTM IT = 100mA –0.98 1.3 V
Holding Current IHX RGK = 27kΩ0.01 0.16 0.50 mA
Gate Trigger Voltage VGT VFX = 100V –0.6 1.0 V
Gate Trigger Current IGT VFX = 100V, RL = 10kΩ, RGK = 27kΩ–23 100 µA
Coupled
Turn–On Current (Threshold) IFT VFX = 100V, RGK = 27kΩ0.5 5.0 14.0 mA
Switching tr + tdVCC = 20V, IF = 30mA, RGK = 27kΩ–7–µs
Steady State Voltage t = 1min 3500 – – V
t = 1min 2500 – – Vrms
Surge Isolation Rating VISO t = 1sec 4000 – – V
t = 1sec 3000 – – Vrms
Isolation Resistance RISO V = 500V 1011 1012 –Ω
Isolation Capacitance CISO f = 1MHz –1 2 pF
Cathode
Anode
Gate1
2
Anode
Cathode
3N.C.
6
5
4
Pin Connection Diagram
.260
(6.6)
Max
.350
(8.89)
Max
.350 (8.89)
Max .300 (7.62)
.200 (5.08)
Max
.085 (2.16) Max
.070 (1.78) Max
.100 (2.54)
123
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