N-CHANNEL
POWER MOSFET
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8085
Issue 1
Page 1 of 3
IRFM140 / 2N7218
• Low RDS(on) MOSFET Transistor
In A Isolated Hermetic Metal Package
• Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS Drain – Source Voltage 100V
VGS Gate – Source Voltage ±20V
ID Continuous Drain Current Tc = 25°C 28A
ID Continuous Drain Current Tc = 100°C 20A
IDM Pulsed Drain Current
(1)
112A
PD Total Power Dissipation at Tc = 25°C 100W
Derate Above 25°C 0.8W/°C
EAS Single Pulse Avalanche Energy
(2)
250mJ
dv/dt Peak Diode Recovery
(3)
5.5V/ns
TJ Junction Temperature Range -55 to +150°C
Tstg Storage Temperature Range -55 to +150°C
THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJC
Thermal Resistance, Junction To Case 1.25 °C/W
Notes
NotesNotes
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @VDD = 25V, L ≥ 470µH, Peak IL = 28A, Starting TJ = 25°C
(3) @ ISD ≤ 28A, di/dt ≤ 170A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 9.1Ω
(4) Pulse Width ≤ 300us, δ ≤ 2%
N-CHANNEL
POWER MOSET
IRFM140 / 2N7218
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8085
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
BVDSS Drain-Source Breakdown
Voltage VGS = 0 ID = 1.0mA 100 V
J
T
DSS
BV
∆
∆
Temperature Coefficent of
Breakdown Voltage
Reference
to 25°C ID = 1.0mA 0.13 V/°C
VGS = 10V ID = 20A 0.077
RDS(on)
(4)
Static Drain-Source
On-State Resistance VGS = 10V ID = 28A 0.125
Ω
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250
µ
A 2 4 V
gfs
(4)
Forward Transconductance VDS
≥
15V I DS = 21A 9.1 S(
Ʊ
)
VGS = 0 VDS = 0.8BVDSS 25
IDSS Zero Gate Voltage
Drain Current TJ = 125°C 250
µ
A
IGSS Forward Gate-Source
Leakage VGS = 20V 100
IGSS Reverse Gate-Source
Leakage VGS = -20V -100
nA
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 1660
Coss Output Capacitance VDS = 25V 550
Crss Reverse Transfer
Capacitance f = 1.0MHz 120
pF
Qg Total Gate Charge VGS = 10V 30 59
Qgs Gate-Source Charge ID = 28A 2.4 12
Qgd Gate-Drain Charge VDS = 0.5BVDSS 12 30.7
nC
td(on) Turn-On Delay Time 21
tr Rise Time 145
td(off) Turn-Off Delay Time 64
tf Fall Time
VDD = 50V
ID = 20A
RG = 9.1
Ω
105
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current 28
ISM
(1)
Pulse Source Current 112
A
IS = 28A TJ = 25°C
VSD
(4)
Diode Forward Voltage VGS = 0
1.5 V
trr
(4)
Reverse Recovery Time IS = 28A TJ = 25°C 400 ns
Qrr
(4)
Reverse Recovery Charge VDD
≤
50V di/dt = 100A/
µ
s 2.9
µ
C
N-CHANNEL
POWER MOSET
IRFM140 / 2N7218
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8085
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO
-
2
54
A
A
Pin 1 - Drain Pin 2 - Source Pin 3 - Gate
1 2 3
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
3.78 (0.149) Dia.
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
30.35 (1.195)
31.40 (1.235)
16.89 (0.665)
17.40 (0.685)
13.59 (0.535)
13.84 (0.545)
20.07 (0.790)
20.32 (0.800)
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045) 3.81 (0.150)
BSC
