SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE BVceEo hee Vce(saT) fr Ch @10V, Pr Device Type @10mA Typical 1 MHz @ 25C (Vv) Min.-Max. @ 1,Vc_(V) |(V) Max. @ Ic, Ig (MHz) Typical (Pf) (mW) 2N2711 2N2712 2N2713 2N2714 2N2923 soon 2N2924 2N2925 2N2926 2N3390 2N3391 DADAOG ~~ NS NS SI OS 2N3391A 2N3392 2N3393 2N3394 2N3395 DHHAOAD ~~ NSN 2N3396 2N3397 2N3398 2N3402 2N3403 aann ws 2N3404 2N3405 2N3414 2N3415 2N3416 oooag o 2N3417 2N3662 2N3663 2N3843 2N3843A NNwoOoM 2N3844 2N3844A 2N3845 2N3845A 2N3854 SNM NN = 2N3854A 2N3855 2N3855A 2N3856 2N3856A NANNN 2N3858 2N3858A 2N3859 2N3859A 2N3860 2N3877 2N3877A 2N3900 2N3900A 2N3901 www MN NNNNN 101Silicon Transistors 2N3414 - I 2N3638 SEE GES3630 2N3649-58 SEE C140 SERIES The General Electric Types 2N3402-2N3405 and 2N3414-2N3417 are NPN silicon planar epitaxial passivated transistors intended for general purpose industrial circuits. These transistors are especially suited for high level linear amplifiers or medium speed switching circuits in industrial control applications. absolute maximum ratings: (25C) (uniess otherwise specified) \A 2N3402,3 2N3404,5 2N3414,15 2N3416,17 Voltages Collector to Emitter Vero 25 50 V Ae Emitter to Base EBO 5 5 V Collector to Base Veso 25 50 V Current Collector (Steady State) * Ic 500 500 ma p. 205 _y OF Woe Dissipation 198 263 Max (Gea a Heatsink @ 25C (2N3402-5)** = Py 900 mw 8 7 ae we Total Power (Free Air @ 25C)}+ Pr 560 TW _NOTE 1: Lead diameter is contrled in the ore os 2N3402-5) ing plane. Between .250 and end of lead a | | 055 365, 16 1A. foe 4 ( : max. of 021 is held. eed (anedi ety) (Free Air @ 25C)t Px 360 mw 7 T Q -17 tt ir-toa Tb Total Power (Free Air @ 65C) t Pr 260 mw ALL DIMEN. IN INCHES AND ARE 0 j i MIN PLANES mer max. " tl Oo (2N3414-17) REFERENCE UNLESS TOLERANCED \-4 k:(os0%-00s tod Temperature tT ot 00s eS caos Storage Tse 55to+4+150 C 3 LEADS Ly tes oom |p marge Operating T; +150 Cc 7 +002 90 ia 9302008 Lead Soldering, 46 + 42 from (NOTE 1) 49 tour. 4 ease for 10 seconds max. L +260 C A... ALL DIMEN. (8 CHES AND ARE REFERENCE UNLESS TOLERANCED *Determined from power limitations due to saturation voltage at this current. *Derate 7.2 mw/C increase in case temperature above 25C. +Derate 4.47 mw/C increase in ambient temperature above 25C. tDerate 2.67 mw/C increase in ambient temperature above 25C. electrical characteristics: (25C) (unless otherwise specified) 2N3402,3 2N3404,5 2N3414,5 2N3416,7 DC CHARACTERISTICS Min. Max. Min. Max. Collector Cutoff Current (Vcs = 25V) Iczo 0.1 a (Ves = 25V, Ts = 100C) CBO 15 wa Collector Cutoff Current (Vcs = 50V) Icso 0.1 a (Vos = 50V, Ta = 100C) Icso 15 ha Emitter Cutoff Current (Ves = 5V) Izzo 0.1 0.1 wa Collector Saturation Voltage (Ip = 3 ma, Io = 50 ma) Vensat) 0.30 0.30 Vv Base Saturation Voltage (Is 3 ma, Ic = 50 ma) BE(SAT) 0.85 0.85 Vv 2N3402,4 2N3403,5 2N3414,6 2N3415,7 Min. Max, Min. Max, Forward Current Transfer Ratio (Vcx = 4.5V, Ic = 2 ma) hre 75 225 180 540 SMALL SIGNAL CHARACTERISTICS Forward Current Transfer Ratio Collector Voltage, : Vc = 4.5V, Frequency of measurement = 1000 cps ihre 15 180 2N3402 2N3403 2N3404 2N3405 2N3414 2N3415 2N3416 2N3417 Vee = 10V; Ic= 1 ma; f=1 Ke; T, = 25C Forward Current Transfer Ratio he. 180 330 150 300 Input Impedance hie 5100 9000 4200 8300 ohms Output Admittance oe 14 21 10 20 umhos Voltage Feedback Ratio re 27 45 2 4 x 10 3612N3402-5 2N3414-7 bee VS Voe* 5V Ty *100C 2N3414 2N3402 2N34516 2N3404 2N3416 2N3403 2N3417 2N3414 2N3402 2N3416 2N3404 hee VS_ TEMPERATURE ALL TYPES Vo 2 5V Ic *2MA 362 2N3416, 2N34I7, 2N3404, 2N3405 Veeisat Ic Ic/Igx 20 a 3 Veeisary V t 12 4 6 810 2 4 6 816 20 60 BO 100 400 600 600 Tc-MA 600 500 2N3414, 2N3415, 2N3402, 2N3403 ceisariS Ic Tc/Tg 20 a 3 3 Tq "100C Veecsar) V oe 3 8 Oxy 5 too 4 2 4 6 810 2 4 6 810 20 40 60 60100 200 400 600600 Ic - MA 1000 TRANSFER CHARACTERISTICS Voge = 1OV Tar 25 (ALL TYPES) Ig IN MA a 9 6 400 2 4 & 8 to 124 Vee IN VOLTSh PARAMETERS VS TEMPERATURE 2N3414,2N3415,2N3402,2N3403 Ve *10V Ig *1MA f= 1KC h PARAMETERS VS TEMPERATURE 2N3416, 2N34I7, 2N3404, 2N3405 Ve = 10V Ic = IMA ft 1kC 20 VS VOLTAGE ALL TYPES Voce IN VOLTS bh PARAMETERS VS Ic LL TYPES Ve =10V f =IKC Ta =25C 20 6 Vee IN VOLTS 8 363 2N3402-5 2N3414-7 ib AND Cop VS VOLTAGE f = imc Ta = 25C Cop OR Cip IN PF 4 6 610 20 40 60 8010 20 40 Vea OR Vca iN VOLTS 2NG 414 CONTOURS OF CONSTANT fy 2N3403 JOMC hye {Vge 7 10V) 6 810 2 4 6810 20 Ic - MA 40 60 80100 2N3416 2@Nn3417 2N3404 2N3405 1OMC hee 2 4 681 2 4 9 6 810 20 1000 IMA 40 60801002N3402-5 2N3414-7 240 200 180 160 140 120 Ig -MA 100 90 60 40 20 0 240 220 180 160 140 120 Ic-MA too 380 60 20 oO Typical Common Emitter Collector Current Characteristic Curves 240 Ta -30C 1, 2.2MA/ 220 STEP 2N3416 200 2N3417 180 2N3405 160 140 < = 1 120 o 4 100 80 60 40 20 240 a = 730C 1, 7. MA/ 220 STEP 2N3414 200 2N3415 2N3402 180 2N3403 160 a 140 = 120 a (00 80 60 40 20 20 T =-30C 18 te = 2N3416 16 2N3417 2N3404 14 2N3405 al Z 2 io oO 10 20 30 40 50 60 70 80 Voe Ta =-30C Ty =tOx 2N3414 2N3415 2N3402 2N3403 5 10 15 20 25 30 35 40 Vee Ty = #25C I, = .2MA/ STEP 2N34I 2N34I7 2N3404 2N3405 Tart 1, 2.tMA/ STEP 2Nn3414 2N3415 2N3403 Ty 2+ 25C Tp 2N3416 2N3417 2N3404 2N 10 20 30 40 50 60 70 80 Vee Ta = +25C Tp = 5 A/STEP 2N3414 2N3415 2N3402 2N3 5 10 IS 20 25 30 35 40 Vee 364 oO 240 220 200 180 (60 140 -MA 120 o 80 60 40 20 240 220 200 (80 160 140 (20 Te-MA too 80 60 40 20 o 1 23 4 5 6 7 Vee Common Emitter Characteristic Curves Ta = +100C I, =5#A/STEP 2N3416 2N3417 2N3404 2N3405 10 20 30 40 50 60 70 60 Vee Ta =+100C Ip =5A/STEP 2N3414 2N3415 2N3402 15 20 25 30 35 40 Vee 5 10 Ty =+100C Ty *-2MA/ STEP 2N3416 2N3417 2N3405 Ta = +100C T,*.IMA/ STEP 2N3414 2N3415 2N3403 8 9 10