K3010P(G) Series
Vishay Semiconductors
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Document Number 83504
Rev. A4, 13–Sep–99 1 (9)
Optocoupler with Phototriac Output
Description
The K3010P(G) series consists of a phototransistor
optically coupled to a gallium arsenide infrared-
emitting diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II (reinforced
isolation):
D
For appl. class I – IV at mains voltage ≤ 300 V
D
For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Monitors, air conditioners, line switches, solid
state relays, microwaves.
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 VRMS)
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65
Safety for mains-operated electronic and related
household apparatus
14827
654
23
1
A (+) C (–) nc
95 10812
~~
Note: Pin 5 must not be connected
Order Instruction
Ordering Code CTR Ranking Remarks
K3010P/ K3010PG1) < 15 mA
K3011P/ K3011PG1) < 10 mA
K3012P/ K3012PG1) < 5 mA
1) G = Leadform 10.16 mm; G is not marked on the body
K3010P(G) Series
Vishay Semiconductors
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2 (9) Document Number 83504
Rev. A4, 13–Sep–99
Features
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
FIMKO (SETI): EN 60950,
Certificate number 12398
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
VDE 0884, Certificate number 94778
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
D
Isolation test voltage (partial discharge test
voltage) Vpd = 1.6 kV
D
Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
D
Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
D
Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D
Thickness through insulation ≥ 0.75 mm
General features:
D
Isolation materials according to UL 94-VO
D
Pollution degree 2 (DIN/VDE 0110 resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D
IFT offered in 3 groups
D
Coupling System C
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage VR5 V
Forward current IF80 mA
Forward surge current tp ≤ 10
m
s IFSM 3 A
Power dissipation Tamb ≤ 25
°
C PV100 mW
Junction temperature Tj100
°
C
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Off state output terminal voltage VDRM 250 V
On state RMS current ITRMS 100 mA
Peak surge current, non-repetitive tp ≤ 10 ms ITMS 1.5 A
Power dissipation Tamb ≤ 25
°
C PV300 mW
Junction temperature Tj100
°
C
Coupler Parameter Test Conditions Symbol Value Unit
Isolation test voltage (RMS) t = 1 min VIO 1) 3.75 kV
Total power dissipation Tamb ≤ 25
°
C Ptot 350 mW
Ambient temperature range Tamb –40 to +85
°
C
Storage temperature range Tstg –55 to +100
°
C
Soldering temperature 2 mm from case, t ≤ 10 s Tsd 260
°
C
1) Related to standard climate 23/50 DIN 50014
K3010P(G) Series
Vishay Semiconductors
www.vishay.de •FaxBack +1-408-970-5600
Document Number 83504
Rev. A4, 13–Sep–99 3 (9)
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA VF1.25 1.6 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward peak off-state
voltage (repetitive) IDRM = 100 nA VDRM 1) 250 V
Peak on-state voltage ITM = 100 mA VTM 1.5 3 V
Critical rate of rise of IFT = 0, IFT = 30 mA (dv/dt)cr 10 V/
m
s
off-state voltage
FT FT
(dv/dt)crq 0.1 0.2 V/
m
s
1) Test voltage must be applied within dv/dt ratings
Coupler
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
Emitting diode trigger VS = 3 V, RL = 150
W
K3010P(G) IFT 8 15 mA
ggg
current
S L
K3011P(G) IFT 5 10 mA
K3012P(G) IFT 2 5 mA
Holding current IF = 10 mA, VS ≥ 3 V IH100
m
A
Note: IFT is defined as a minimum trigger current
V~
RS
95 10813
Test condition:
dv/dtcr
VS = 2/3 VDRM
(Sine wave)
RL = 33 kΩ
dv/dtcrq
Veff = 30 V
(Sine wave)
RL = 2 kΩ
IFT RL
Figure 1. Test circuit for dv/dtcr and dv/dtcrp
K3010P(G) Series
Vishay Semiconductors
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4 (9) Document Number 83504
Rev. A4, 13–Sep–99
IF
y
IFT
95 10814
dv/dtcr Highest value of the “rate of rise of off-state voltage” which does not cause any switching from the
off-state to the on-state
dv/dtcrq Highest value of the “rate of rise of communicating voltage” which does not switch on the device again,
after the voltage has decreased to zero and the trigger current is switched from IFT to zero
IF = 0
dv / dtcrq dv / dtcr
Figure 2.
M
95 10815
270 Ω
TTL
+5 V
0.1 µFVAC ~
Galvanical separation
Figure 3. Motor control circuit
K3010P(G) Series
Vishay Semiconductors
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Document Number 83504
Rev. A4, 13–Sep–99 5 (9)
Maximum Safety Ratings (according to VDE 0884) see figure 4
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Forward current Isi 130 mA
Output (Detector)
Parameters Test Conditions Symbol Value Unit
Power dissipation Tamb ≤ 25
°
C Psi 600 mW
Coupler
Parameters Test Conditions Symbol Value Unit
Rated impulse voltage VIOTM 6 kV
Safety temperature Tsi 150
°
C
Insulation Rated Parameters (according to VDE 0884)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Partial discharge test voltage – 100%, ttest = 1 s Vpd 1.6 kV
gg
Routine test
test
VIOTM 6 kV
Partial discharge test voltage –
Lot test (sample test) tTr = 60 s, ttest = 10 s,
(see figure 5) Vpd 1.3 kV
Insulation resistance VIO = 500 V RIO 1012
W
VIO = 500 V,
Tamb = 100
°
CRIO 1011
W
VIO = 500 V,
Tamb = 150
°
C
(construction test only)
RIO 109
W
0
75
150
225
300
375
450
525
600
675
0 25 50 75 100 125 150
Tamb ( °C )95 10925
Psi (mW)
Isi (mA)
Figure 4. Derating diagram
t
13930
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
VPd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s tstres
t3t4
t2
Figure 5. Test pulse diagram for sample test according to
DIN VDE 0884
K3010P(G) Series
Vishay Semiconductors
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6 (9) Document Number 83504
Rev. A4, 13–Sep–99
Typical Characteristics (Tamb = 25
_
C, unless otherwise specified)
0
100
200
300
400
0 20406080100
P – Total Power Dissipation ( mW )
Tamb – Ambient Temperature ( °C )96 11701
tot
Coupled device
Phototransistor
IR-diode
Figure 6. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )96 11862
F
I – Forward Current ( mA )
Figure 7. Forward Current vs. Forward Voltage
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
Tamb – Ambient Temperature ( °C )96 11922
VS=3V
RL=150
W
I – Relative Threshold Forward Current
FTrel
Figure 8. Relative Threshold Forward Current vs.
Ambient Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
Tamb – Ambient Temperature ( °C )96 11923
V – Relative On–State Voltage
TMrel
IF
w
IFT
IT=100mA
Figure 9. Relative On - State vs. Ambient Temperature
1
10
100
20 30 40 50 60 70 80 90 100
Tamb – Ambient Temperature ( °C )96 11924
VDR=100V
IF=0
I – Off–State Current ( nA )
DRM
Figure 10. Off - State Current vs. Ambient Temperature
–250
–200
–150
–100
–50
0
50
100
150
200
250
–2.5–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5
VTM – On–State Voltage ( V )96 11925
I – On–State Current ( mA )
TM
IFT=15mA
Figure 11. On - State Current vs. Ambient Temperature
K3010P(G) Series
Vishay Semiconductors
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Document Number 83504
Rev. A4, 13–Sep–99 7 (9)
XXXXXX
0884
918 A TK 63
15090
Type
Date
Code
(YM)
Coupling
System
Indicator
Company
Logo
Production
Location
Safety
Logo
V
DE
Figure 12. Marking example
Dimensions of K301.PG in mm
14771
K3010P(G) Series
Vishay Semiconductors
www.vishay.de •FaxBack +1-408-970-5600
8 (9) Document Number 83504
Rev. A4, 13–Sep–99
Dimensions of K301.P in mm
14770
K3010P(G) Series
Vishay Semiconductors
www.vishay.de •FaxBack +1-408-970-5600
Document Number 83504
Rev. A4, 13–Sep–99 9 (9)
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
