7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N2880 APPLICATIONS: * * Fast Switching High Frequency Switching and Amplifying FEATURES: * * High Reliability Greater Gain Stability 5 Amp, 80V, Planar, NPN Power Transistors JAN,JTX,JANTXV,JANS DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200 C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-59 ABSOLUTE MAXIMUM RATINGS SYMBOL VCBO* VCEO* VEBO* IC * IB * T STG* T J* * PT * JC * Indicates CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Storage Temperature Operating Junction Temperature Lead Temperature 1/16" From Case for 10 Sec. Power Dissipation T A = 25 C T C = 100 C Thermal Resistance Junction to Case MIL-S-19500/315 MSC0950A.DOC 11-09-98 VALUE UNITS 110 80 8 5 0.5 -65 to 200 -65 to 200 230 V V V A A C C C 2 30 W W 3.33 C/W 2N2880 ELECTRICAL CHARACTERISTICS (25 Case Temperature Unless Otherwise Noted) SYMBOL CHARACTERISTIC TEST CONDITIONS VALUE Min. Max. Units BVCBO* Collector-Base Voltage IC = 10 Adc, Cond. D 110 ---- Vdc BVCEO* Collector-Emitter Voltage (Note 1) IC = 0.1 Adc, Cond. D 80 ---- Vdc BVEBO* Emitter-Base Voltage IE = 10 Adc, Cond. D VCE = 60 Vdc, Cond. D 8 ---- ---20 Adc VCE = 110 Vdc, VEB = 0.5 Vdc, Cond. A VCE = 80 Vdc, VEB = 0.5 Vdc, Cond. A, TA = 150 C VCB = 80 Vdc, Cond. D VCB = 60 Vdc, Cond. D, TA = - 150 C VEB = 6 Vdc, Cond. D ---------------- 1.0 50 0.2 10 0.2 Adc A IC = 50 mAdc, VCE = 5 Vdc IC = 1 Adc, VCE = 5 Vdc IC = 5 Adc, VCE = 5 Vdc IC = 1 Adc, VCE = 5 Vdc, TA = - 55 C 40 40 15 15 120 120 ------- ------------- ICEO* ICEX* ICBO* IEBO* hFE* Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain (Note 1) Vdc Adc --- Adc AC Current Gain IC = 50 mAdc, VCE = 5 Vdc, f = e KHz VCE(sat)* Collector Saturation Voltage (Note 1) IC = 1 Adc, IB = 0.1 Adc IC = 5 Adc, IB = 0.5 Adc 40 ------- 120 0.25 1.5 ---Vdc Vdc VBE(sat)* Base Saturation Voltage (Note 1) Base On-Voltage (Note 1) IC = 1 Adc, IB = 0.1 Adc ---- 1.2 Vdc IC = 1 Adc, VCE = 2 Vdc ---- 1.2 Vdc Gain-Bandwidth Product IC = 1 Adc, VCE = 10 Vdc, f = 10 MHz 30 120 MHz Output Capacitance VCB = 10 Vdc, 1E = 0, f = 1 MHz ---- 150 pf td* Delay Time IC = 1 A, IB1 = IB2 = 100 ma ---- 60 ns tr* Rise Time IC = 1 A, IB1 = IB2 = 100 ma ---- 300 ns ts* Storage Time IC = 1 A, IB1, = IB2 = 100 ma ---- 1.7 s tf* Fall Time Forward-Biased Second Breakdown IC = 1 A, IB1 = IB2 = 100 ma ---1.5 80 300 ------- ns Adc mAdc Clamped ReverseBiased Second Breakdown Unclamped ReverseBiased Second Breakdown IC = 5 A, L = 1 mH, VClamp = 110 V, TC = 100 C IB = 0.5 A, RBB2 = 20 , VBB2 = -3.0V 12.5 ---- mj IC = 5 A, L = 1 mH, Base Open IC = 1.6 A, L = 10 mH, Base Open 12.5 12.8 ------- mj mj hFE* VBE(on)* fT * Cob* IS/B* ES/B* ES/B* VCE = 20 Vdc, t = 10 Sec, TC = 100 C VCE = 80 Vdc, t = 10 Sec, TC = 100 C Note 1: Pulse Test: PW = 300 s, Duty Cycle 2%. * Indicates MIL-S-19500/315 MSC0950A.DOC 11-09-98 2N2880 PACKAGE MECHANICAL MECHANICAL DATA .185 [4.70] .215 [5.46] .424 [10.77] .437 [11.10] O.055 [1.40] +.010 [.254] -.015 [.381] O.318 [8.07] O.380 [9.65] .570 [14.48] .763 [19.38] .320 [8.13] .468 [11.88] .090 [2.28] .150 [3.81] NOTE: DIMENSIONS IN [ ] = MILLIMETERS MSC0950A.DOC 11-09-98 .400 [10.16] .455 [11.56] ALL JEDEC DIMENSIONS AND NOTES APPLY