MSC0950A.DOC 11-09-98
2N2880
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS
SYMBOL
CHARACTERISTIC
VALUE
UNITS
VCBO*Collector-Base Voltage 110 V
VCEO*Collector-Emitter Voltage 80 V
VEBO*Emitter-Base Voltage 8V
IC*Continuous Collector Current 5A
IB*Continuous Base Current 0.5 A
TSTG*Storage Temperature -65 to 200 °°C
TJ*Operating Junction Temperature -65 to 200 °°C
*Lead Temperature 1/16"
From Case for 10 Sec. 230 °°C
PT*Power Dissipation
TA = 25°°C
TC = 100°°C2
30
W
W
θθ JC Thermal Resistance
Junction to Case 3.33 °°C/W
5 Amp, 80V,
Planar, NPN
Power Transistors
JAN,JTX,JANTXV,JANS
FEATURES:
• High Reliability
• Greater Gain Stability
TO-59
APPLICATIONS:
• Fast Switching
• High Frequency Switching and Amplifying
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
*
MSC0950A.DOC 11-09-98
2N2880
ELECTRICAL CHARACTERISTICSELECTRICAL CHARACTERISTICS
(25°°Case Temperature Unless Otherwise Noted) VALUE
SYMBOL CHARACTERISTIC TEST CONDITIONS Min. Max. Units
BVCBO*Collector-Base Voltage IC = 10 µAdc, Cond. D 110 ---- Vdc
BVCEO*Collector-Emitter Voltage
(Note 1) IC = 0.1 Adc, Cond. D 80 ---- Vdc
BVEBO*Emitter-Base Voltage IE = 10 µAdc, Cond. D 8---- Vdc
ICEO*Collector-Emitter
Cutoff Current VCE = 60 Vdc, Cond. D ---- 20 µAdc
ICEX*Collector-Emitter
Cutoff Current VCE = 110 Vdc, VEB = 0.5 Vdc, Cond. A
VCE = 80 Vdc, VEB = 0.5 Vdc, Cond. A, TA = 150°°C----
---- 1.0
50 µAdc
µA
ICBO*Collector-Base
Cutoff Current VCB = 80 Vdc, Cond. D
VCB = 60 Vdc, Cond. D, TA = - 150°°C----
---- 0.2
10 µAdc
----
IEBO*Emitter-Base
Cutoff Current VEB = 6 Vdc, Cond. D ---- 0.2 µAdc
hFE* DC Current Gain
(Note 1) IC = 50 mAdc, VCE = 5 Vdc
IC = 1 Adc, VCE = 5 Vdc
IC = 5 Adc, VCE = 5 Vdc
IC = 1 Adc, VCE = 5 Vdc, TA = - 55°°C
40
40
15
15
120
120
----
----
----
----
----
----
hFE* AC Current Gain IC = 50 mAdc, VCE = 5 Vdc, f = èè KHz 40 120 ----
VCE(sat)*Collector Saturation
Voltage (Note 1) IC = 1 Adc, IB = 0.1 Adc
IC = 5 Adc, IB = 0.5 Adc ----
---- 0.25
1.5 Vdc
Vdc
VBE(sat)* Base Saturation
Voltage (Note 1) IC = 1 Adc, IB = 0.1 Adc ---- 1.2 Vdc
VBE(on)*Base On-Voltage
(Note 1) IC = 1 Adc, VCE = 2 Vdc ---- 1.2 Vdc
fT*Gain-Bandwidth Product IC = 1 Adc, VCE = 10 Vdc, f = 10 MHz 30 120 MHz
Cob*Output Capacitance VCB = 10 Vdc, 1E = 0, f = 1 MHz ---- 150 pf
td* Delay Time IC = 1 A, IB1 = IB2 = 100 ma ---- 60 ns
tr* Rise Time IC = 1 A, IB1 = IB2 = 100 ma ---- 300 ns
ts* Storage Time IC = 1 A, IB1, = IB2 = 100 ma ---- 1.7 µµs
tf* Fall Time IC = 1 A, IB1 = IB2 = 100 ma ---- 300 ns
IS/B*Forward-Biased
Second Breakdown VCE = 20 Vdc, t = 10 Sec, TC = 100°°C
VCE = 80 Vdc, t = 10 Sec, TC = 100°°C1.5
80 ----
---- Adc
mAdc
ES/B*Clamped Reverse-
Biased Second
Breakdown
IC = 5 A, L = 1 mH, VClamp = 110 V, TC = 100°°C
IB = 0.5 A, RBB2 = 20ΩΩ, VBB2 = -3.0V 12.5 ---- mj
ES/B*Unclamped Reverse-
Biased Second
Breakdown
IC = 5 A, L = 1 mH, Base Open
IC = 1.6 A, L = 10 mH, Base Open 12.5
12.8 ----
---- mj
mj
Note 1: Pulse Test: PW = 300µµs, Duty Cycle ≤≤ 2%.
* Indicates MIL-S-19500/315
MSC0950A.DOC 11-09-98
2N2880
PACKAGE MECHANICAPACKAGE MECHANICAL DATAL DATA
NOTE: DIMENSIONS IN [ ] = MILLIMETERS
.424 [10.77]
.437 [11.10]
.090 [2.28]
.150 [3.81]
.320 [8.13]
.468 [11.88] .400 [10.16]
.455 [11.56]
.185 [4.70]
.215 [5.46]
.570 [14.48]
.763 [19.38]
+.010 [.254]
-.015 [.381]
Ø.318 [8.07]
Ø.380 [9.65]
Ø.055 [1.40]
ALL JEDEC DIMENSIONS AND NOTES APPLY