Industrial and Multi-Market
Data Sheet
Revision 1.0, 2011-04-08
Final
ESD5V3S1B-02LS
Bi-directional Symmetrical Medium Capacitance ESD / Transient Protection Diode
ESD5V3S1B-02LS
TVS Diode
Transient Voltage Suppressor Diodes
Edition 2011-04-08
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
ESD5V3S1B-02LS
Final Data Sheet 3 Revision 1.0, 2011-04-08
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™,
MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Revision History
Page or Item Subjects (major cha nges since previous revision)
Revision 1.0, 2011-04-08
ESD5V3S1B-02LS
Table of Contents
Final Data Sheet 4 Revision 1.0, 2011-04-08
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1 Bi-directional Symmetrical Medium Capacitance ESD / Transient Protection Diode . . . . . . . . . 7
1.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.2 Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2 Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.1 Electrical Characteristics at TA= 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.2 Typical Characteristics at TA=25°C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Ordering Information Scheme (Examples) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6.1 PG-TSSLP-2-1 (mm) [2] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Predefined Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table of Contents
ESD5V3S1B-02LS
List of Figures
Final Data Sheet 5 Revision 1.0, 2011-04-08
Figure 2-1 Pin Configuration and Schematic Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 3-1 Definitions of electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 3-2 Reverse current: IR=f(VR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 3-3 Reverse current: IR=f(TA), VR= 5.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 3-4 Line capacitance: CL=f(VR), f= 1MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 3-5 Clamping voltage (TLP): ITLP =f(VTLP) [1] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 4-1 Single line, bi-directional ESD / Transient protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 5-1 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 6-1 PG-TSSLP-2-1: Package overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 6-2 PG-TSSLP-2-1: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 6-3 PG-TSSLP-2-1: Packing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 6-4 PG-TSSLP-2-1: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
List of Figures
ESD5V3S1B-02LS
List of Tables
Final Data Sheet 6 Revision 1.0, 2011-04-08
Table 2-1 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 3-1 Maximum Ratings at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 3-2 DC Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 3-3 RF Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 3-4 ESD Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
List of Tables
ESD5V3S1B-02LS
Bi-directional Symmetrical Medium Capacitance ESD / Transient Protection
Final Data Sheet 7 Revision 1.0, 2011-04-08
1 Bi-directional Symmetrical Medium Capacitance ESD / Transient
Protection Diode
1.1 Features
ESD / transient protection of signal lines in low voltage applications according to:
IEC61000-4-2 (ESD): ±20 kV (contact)
IEC61000-4-4 (EFT): 40 A / 2 kV (5/50 ns)
IEC61000-4-5 (surge): 5 A (8/20 μs)
Bi-directional, symmetrical working voltage up to VRWM 5.3V
Low clamping voltage, low dynamic resistance RDYN =0.5 (typical)
Smallest form factor: 0.62 x 0.32 x 0.31 mm3
Pb-free (RoHS compliant) and halogen free package
1.2 Application Examples
Audio line protection
Mobile communication, Consumer products (STB, MP3, DVD, DSC...)
LCD displays, keypads, trackball protection, camera
Notebooks and desktop computers, peripherals
2 Product Description
Figure 2-1 Pin Configuration and Schematic Diagram
Table 2-1 Ordering Information
Type Package Configuration Marking code
ESD5V3S1B-02LS PG-TSSLP-2-1 1 line, bi-directional H
a) Pin configuration
PG-TSSLP-2_Dual_Diode_Serie_PinConf_and_SchematicDiag.vsd
b) Schematic diagram
Pin 1
Pin 2
TSSLP -2
Pin 1 Pin 2
Pin 1 marking
(lasered)
ESD5V3S1B-02LS
Characteristics
Final Data Sheet 8 Revision 1.0, 2011-04-08
3 Characteristics
3.1 Electrical Characteristics at TA= 25 °C, unless otherwise specified
Figure 3-1 Definitions of electrical char acteristics
Table 3-1 Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
Min. Typ. Max.
ESD contact discharge1)
1) VESD according to IEC61000-4-2
VESD ––20kV
Peak pulse current (tp = 8/20 μs)2)
2) IPP according to IEC61000-4-5
IPP ––5A
Operating temperature range TOP -40 125 °C
Storage temperature Tstg -55 150 °C
Table 3-2 DC Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Reverse working voltage VRWM -5.3 5.3 V
Breakdown voltage VBR 6––VIR=1mA
Reverse current IR––0.1µAVR=3.3V
Diode_Charac teristic_C urve_Bi-directional .vsd
I
I
RWM
V
RWM
V
CL
I
PP
I
BR
V
BR
I
RWM
V
RWM
V
CL
I
PP
I
BR
V
BR
V
R
DYN
R
DYN
Dynamic resistance
R
DYN
V
BR
Breakdown voltage
V
RWM
Reverse working voltage maximum
V
CL
Clamping voltage
I
PP
Peak pulse current
ESD5V3S1B-02LS
Characteristics
Final Data Sheet 9 Revision 1.0, 2011-04-08
3.2 Typical Characteristics at TA=25°C, unless otherwise specified
Figure 3-2 Reverse current: IR=f(VR)
Table 3-3 RF Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Line capacitance CL–1720pFVR = 0 V, f = 1 MHz
Table 3-4 ESD Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Reverse clamping
voltage1) [2]
1) Please refer to Application Note AN210. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns
to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between IPP1 = 10 A and
IPP2 =40A.
VCL –18–VIPP =16A
–26–V
IPP =30A
Dynamic resistance1)[2] RDYN –0.5
10-12
10-11
10-10
10-9
10-8
10-7
10-6
0 1 2 3 4 5 6
IR [A]
VR [V]
ESD5V3S1B-02LS
Characteristics
Final Data Sheet 10 Revision 1.0, 2011-04-08
Figure 3-3 Reverse current: IR=f(TA), VR= 5.3 V
Figure 3-4 Line capacitance: CL=f(VR), f=1MHz
10-9
10-8
10-7
10-6
-50 -25 0 25 50 75 100 125 150
IR [A]
TA [°C]
10
11
12
13
14
15
16
17
18
19
20
0 1 2 3 4 5 6
CL [pF]
VR [V]
ESD5V3S1B-02LS
Application Information
Final Data Sheet 11 Revision 1.0, 2011-04-08
Figure 3-5 Clamping voltage (TLP): ITLP =f(VTLP) [1]
4 Application Information
Figure 4-1 Single line, bi-directional ESD / Transient protection
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35 40
0
5
10
15
20
25
30
ITLP [A]
Equivalent VIEC [kV]
VTLP [V]
ESD5V3S1B-02LS
RDYN
RDYN=0.5Ω
Application_ES D5V3S1B-02LS.vsd
ESD
sensitive
device
1
2
Co nne cto r
Protected signal line
The protection diode should be placed very close to the location
wher e the ESD or other transients can occur to keep loops and
inductances as small as possible .
Pin 2 (or pin 1) should be connected directly to a ground plane on
the board .
I/ O
ESD5V3S1B-02LS
Ordering Information Scheme (Examples)
Final Data Sheet 12 Revision 1.0, 2011-04-08
5 Ordering Information Scheme (Examples)
Figure 5-1 Ordering information scheme
ESD 5V3 U- XX YY
P ackage or App li cat io n
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
S = SOT363
U = SC74
XX = Application family:
LC = Low Clamp
HDMI
Uni- / Bi-directional or Rail to Rail protection
M aximum working volt age VRWM in V: (i.e.: 5V3 = 5.3V)
ESD 0P1 RF - XX YY
Package
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
For Radio Frequency Applications
Line Capacitance CLin pF: (i.e.: 0P1 = 0.1pF)
n U
Number of protected lines (i.e.: 1 = 1 line; 4 = 4 lines)
Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF)
ESD5V3S1B-02LS
Package Information
Final Data Sheet 13 Revision 1.0, 2011-04-08
6 Package Information
6.1 PG-TSSLP-2-1 (mm) [2]
Figure 6-1 PG-TSSLP-2-1: Package overview
Figure 6-2 PG-TSSLP-2-1: Footprint
Figure 6-3 PG-TSSLP-2-1: Packing
Figure 6-4 PG-TSSLP-2-1: Mar king (example)
TSSLP-2-1,-2-PO V05
±0.035
0.32
1
2
±0.025
0.355
±0.025
0.2
1)
0.62
±0.035
+0.01
0.31-0.02
1) Dimension applies to plated terminal
Cathode
marking
1)
±0.025
0.26
Bottom viewTop view
0.27
0.19
0.19
0.19
Copper Solder mask Stencil apertures
0.57
0.24
0.62
0.32
0.24
0.14
TSSLP-2-1,-2-FP V02
ag
TSSLP-2-1,-2-TP V03
Deliveries can be both tape types (no selection possible).
Specification allows identical processing (pick & place) by users.
Ex Ey
Punched Tape
Tape type
Embossed Tape
0.43 0.73
0.37 0.67
ESD5V3S1B-02LS
References
Final Data Sheet 14 Revision 1.0, 2011-04-08
References
[1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP
Characterization Methodology
[2] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages
ESD5V3S1B-02LS
Terminology
Final Data Sheet 15 Revision 1.0, 2011-04-08
Terminology
CLLine capacitance
DSC Digital Still Camera
DVD Digital Versatile Disc
EFT Electrical Fast Transient
ESD Electrostatic Discharge
IPP Peak pulse current
IRReverse current
LCD Liquid Crystal Display
MP3 Audio player device based on MPEG Audio Layer III
PPK Peak pulse power
RDYN Dynamic resistance
RoHs Restriction of Hazardous Substance directive
STB Set-Top-Box
TAAmbient temperature
TOP Operation temperature
tpPulse duration
Tstg Storage temperature
VBR Breakdown voltage
VCL Reverse clamping voltage
VESD Electrostatic discharge voltage
VRReverse voltage
VRWM Reverse working voltage maximum
ESD5V3S1B-02LS
Predefined Names
Final Data Sheet 16 Revision 1.0, 2011-04-08
Predefined Names
-----------------------------------------------------------------------------
Definition of “Predefined Names”
Frequently used expressions, such as component names, file names, tools releases, version numbers, proprietary
variables and software links, can be used in a similar way as user variables. However, they must be listed in a
special table and not in the standard file “Variables”.
Correct Usage
Steps:
1. Insert all expressions into the left column of the above table.
2. Insert an initial Cross-Reference into the right column of the same row. The initial Cross-Reference is
necessary to ensure that a single ID is used in all your documents using the “Predefined_Names.fm” file
(Example: X-GOLD has the unique ID = CHDGHJGH).
3. Insert a Cross-Reference (Element “CrossReference”) into your document to the Element Identifier of the
“Predefined_Names.fm” file. Set the output format of the Cross-Reference to “Variable” (example: X-GOLD).
Notes
1. All documents in a project (such as XMM) and within a book should use the same file “Predefined Names”.
This allows copying content between different documents. For this reason, local versions of “Predefined
Names” must not be produced.
2. New definitions must be inserted in a new row. Never change existing definitions, as they might be used in
other documents.
3. This file does not need to be included in your book, but it must be in the fm sub-folder of your document.
4. You can sort the above table with FrameMaker only if the initial cross-re fere nce in the rig ht column has been
properly inserte d. Otherwise, the table may only be sort ed by hand, as the cross-refer ences to your document
would get lost.
Name Initial Cross-Reference
X-GOLD X-GOLD
XMM XMM
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