PR1001G/LPR1007G/L VISHAY Vishay Lite-On Power Semiconductor 1.0A Fast Recovery Glass Passivated Rectifier Features Glass passivated die construction Diffused junction Fast switching for high efficiency voltage drop Surge overload rating to 30A peak Low reverse leakage current High current capability and low forward Plastic material - UL Recognition flammability classification 94V0 Absolute Maximum Ratings Tj = 25C 14.451 epetitive peak reverse voltage =Working peak reverse voltage PR1002G/GL 100 Vv PR1004G/GL 400 Vv PR1005G/GL 600 Vv PR1006G/GL 800 Vv PR1007G/GL 1000 Vv Peak forward surge current lesm 30 A Average forward current Ta=55C lFay 1 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage Ir=1A Ve 13 | V Reverse current Tp=25C IR 5 vA Ta=1 00C IR 50 vA Reverse recovery time ||l-F=1A, IR=0.5A, PR1001G/GL1004G/GL tr 150 | ns 1=0.25A PR1005G/GL ter 250 | ns PR1006G/GL-1007G/GL ter 500 | ns Diode capacitance VpR=4V, f=1MHz PR1001G/GL1004G/GL Cp 15 pF PR1005G/GL-1007G/GL Cp 8 pF Thermal resistance RthuA 95 KW junction to ambient Rev. A2, 24-Jun-98PR1001G/LPR1007G/L war Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) 1.0 ; = 30 TTT 71-1711 x wae phase halt wave load x 8.3 ms Single Half-Sine-Wave Z resistive or inductive loa > < JEDEC method 5 08 oO . o 5 3 \ oO 20 3 Dp N\ a 0.6 3 = a N o Z NJ LL s N o 04 N 2 9 10 N Pd LL oO x N\ Z 3 IN I 0.2 o NM z hs i MMI 0 - 0 25 50 75 100 125 150 175 200 1 10 100 15490 Tamb Ambient Temperature ( C ) 15492 Number of Cycles at 60 Hz Figure 1. Max. Average Forward Current vs. Figure 3. Max. Peak Forward Surge Current vs. Ambient Temperature Number of Cycles 10 100 ~ L < a = g 5 10 5 5 = PR1001 PR1004 3 Oo o o Z 2 10 w Oo 5 3 rm ol 8 PR1005 PR1007 I a as I a Tj = 25C Pulse Width = 300 ps 0.01 1 0.6 0.8 1.0 1.2 14 1 10 100 15491 Ve Forward Voltage ( V ) 15493 Vr Reverse Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 2 (4) Rev. A2, 24-Jun-98PR1001G/LPR1007G/L VISHAY Dimensions in mm Vishay Lite-On Power Semiconductor "L" Suffix Designates A-405 Package No Suffix Designates UO-41 Package UO0-44 A-405 Uim Min Max Min Max A 25.40 - 25.40 - B 4.06 5.21 4.10 5.20 C 0.71 0.864 0.53 0.64 D 2.00 2.12 2.00 2.10 ALL Dimensions in mm Case: molded plastic Polarity: cathode band Approx. weight: DO-41 0.35 grams, A405 0.20 grams Mounting position: any Marking: type number 4 & technical. drawings according to DIN specifications 14447 Rev. A2, 24-Jun-98PR1001G/LPR1007G/L Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98