PESD1LIN15V - Philips Semiconductors / NXP Semiconductors

1. Product proﬁle

1.1 General description

PESD1LIN in very small SOD323 (SC-76) SMD plastic package designed to protect one

automotive LIN bus line from the damage caused by ElectroStatic Discharge (ESD) and

other transients.

1.2 Features

■ESD protection of one automotive LIN bus line

■Asymmetrical diode conﬁguration ensures an optimized Electromagnetical Immunity of

a LIN Electronic Control Unit (ECU)

■Due to the integrated diode structure only one very small SOD323 package is needed

■Max. peak pulse power: PPP = 160 W at tp = 8/20 µs

■Low clamping voltage: V(CL)R = 40 V at IPP = 1 A

■Ultra low leakage current: IRM < 1 nA

■ESD protection of up to 23 kV

■IEC 61000-4-2, level 4 (ESD)

■IEC 61000-4-5 (surge); IPP = 3 A at tp = 8/20 µs

1.3 Applications

■LIN bus protection

■Automotive applications

1.4 Quick reference data

PESD1LIN

LIN bus ESD protection diode in SOD323

Rev. 01 — 26 October 2004 Product data sheet

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse stand-off voltage

PESD1LIN (15 V) - - 15 V

PESD1LIN (24 V) - - 24 V

Cddiode capacitance VR = 0 V;

f = 1 MHz - 1317pF

Product data sheet Rev. 01 — 26 October 2004 2 of 12

Philips Semiconductors PESD1LIN

LIN bus ESD protection diode in SOD323

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Figure 1.

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

1 cathode 1 (15 V)

2 cathode 2 (24 V) 21

sym045

Table 3: Ordering information

Type number Package

Name Description Version

PESD1LIN SC-76 plastic surface mounted package; 2 leads SOD323

Table 4: Marking codes

Type number Marking code

PESD1LIN AM

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

PPP peak pulse power 8/20 µs[1] - 160 W

IPP peak pulse current 8/20 µs[1] -3A

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Product data sheet Rev. 01 — 26 October 2004 3 of 12

Philips Semiconductors PESD1LIN

LIN bus ESD protection diode in SOD323

[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.

Table 6: ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

ESD electrostatic discharge

capability IEC 61000-4-2

(contact discharge) [1] -23kV

HBM MIL-STD883 - 10 kV

Table 7: ESD standards compliance

ESD Standard Conditions

IEC 61000-4-2, level 4 (ESD); see Figure 2 > 15 kV (air); > 8 kV (contact)

HBM MIL-STD883, class 3 > 4 kV

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5. Fig 2. ElectroStatic Discharge (ESD) pulse waveform

according to IEC 61000-4-2.

t (µs)

0403010 20

001aaa630

120

Ipp

(%)

e−t

100 % Ipp; 8 µs

50 % Ipp; 20 µs

001aaa631

Ipp

100 %

90 %

30 ns 60 ns

10 %

tr = 0.7 to 1 ns

Product data sheet Rev. 01 — 26 October 2004 4 of 12

Philips Semiconductors PESD1LIN

LIN bus ESD protection diode in SOD323

6. Characteristics

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform; see Figure 1.

Table 8: Characteristics

amb

= 25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse stand-off voltage

PESD1LIN (15 V) - - 15 V

PESD1LIN (24 V) - - 24 V

IRM reverse leakage current

PESD1LIN (15 V) VRWM = 15 V - < 1 50 nA

PESD1LIN (24 V) VRWM = 24 V - < 1 50 nA

V(BR) breakdown voltage IR = 5 mA

PESD1LIN (15 V) 17.1 18.9 20.3 V

PESD1LIN (24 V) 25.4 27.8 30.3 V

Cddiode capacitance VR = 0 V; f = 1 MHz - 13 17 pF

V(CL)R clamping voltage [1]

PESD1LIN (15 V) IPP = 1 A - - 25 V

IPP = 5 A - - 44 V

PESD1LIN (24 V) IPP = 1 A - - 40 V

IPP = 3 A - - 70 V

rdif differential resistance

PESD1LIN (15 V) IR = 1 mA - - 225 Ω

PESD1LIN (24 V) IR = 1 mA - - 300 Ω

Product data sheet Rev. 01 — 26 October 2004 5 of 12

Philips Semiconductors PESD1LIN

LIN bus ESD protection diode in SOD323

Tamb = 25 °C.

tp = 8/20 µs exponentially decaying waveform; see

Figure 1.

Fig 3. Peak pulse power dissipation as a function of

pulse time; typical values. Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical

values.

006aaa164

103

102

104

PPP

(W)

tp (µs)

110

103

10 102Tj (°C)

0 20015050 100

001aaa193

0.4

0.8

1.2

Ppp

Ppp(25˚C)

Product data sheet Rev. 01 — 26 October 2004 6 of 12

Philips Semiconductors PESD1LIN

LIN bus ESD protection diode in SOD323

Fig 5. ESD clamping test set-up and waveforms.

006aaa166

50 Ω

vertical scale = 200 V/div

horizontal scale = 50 ns/div

unclamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network)

unclamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network)

vertical scale = 20 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div vertical scale = 20 V/div

horizontal scale = 50 ns/div

GND

450 ΩRG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

D.U.T.

(Device

Under

Test)

PESD1LIN (15V)

PESD1LIN (24V)

Product data sheet Rev. 01 — 26 October 2004 7 of 12

Philips Semiconductors PESD1LIN

LIN bus ESD protection diode in SOD323

7. Application information

The PESD1LIN is designed for protection of one LIN bus signal line from the damage

caused by ElectroStatic Discharge (ESD) and surge pulses. The PESD1LIN provides a

surge capability of up to 160 W per line for a 8/20 µs waveform.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the protection device as close to the input terminal or connector as possible.

2. The path length between the protection device and the protected line should be

minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protection conductors in parallel with unprotected conductor.

5. Minimize all printed-circuit board conductive loops including power and ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer printed-circuit

boards, use ground vias.

Fig 6. Typical application: ESD protection of one automotive LIN bus line.

006aaa167

ground

PESD1LIN

24 V

15 V

line to be protected

Philips Semiconductors PESD1LIN

LIN bus ESD protection diode in SOD323

Product data sheet Rev. 01 — 26 October 2004 8 of 12

8. Package outline

Fig 7. Package outline SOD323 (SC-76).

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD323 SC-76

SOD323

99-09-13

03-12-17

Note

1. The marking bar indicates the cathode

UNIT A

mm 0.05

1.1

0.8 0.40

0.25 0.25

0.10 1.8

1.6 1.35

1.15 2.7

2.3 0.45

0.15

max

DIMENSIONS (mm are the original dimensions)

Plastic surface mounted package; 2 leads

(1)

2 mm

scale

bpc D E HDQ

0.25

0.15

Lpv

0.2

detail X

A1c

HDvA

Product data sheet Rev. 01 — 26 October 2004 9 of 12

Philips Semiconductors PESD1LIN

LIN bus ESD protection diode in SOD323

9. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Table 9: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 10000

PESD1LIN SOD323 4 mm pitch, 8 mm tape and reel -115 -135

Product data sheet Rev. 01 — 26 October 2004 10 of 12

Philips Semiconductors PESD1LIN

LIN bus ESD protection diode in SOD323

10. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

PESD1LIN_1 20041026 Product data sheet - 9397 750 14032 -

Philips Semiconductors PESD1LIN

LIN bus ESD protection diode in SOD323

Product data sheet Rev. 01 — 26 October 2004 11 of 12

11. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Level Data sheet status[1] Product status[2] [3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.Date of release: 26 October 2004

Document number: 9397 750 14032

Published in The Netherlands

Philips Semiconductors PESD1LIN

LIN bus ESD protection diode in SOD323

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 7

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information . . . . . . . . . . . . . . . . . . . . 11