ee FAIRCHILD June 1998 ee SEMICONDUCTOR m FDS6912A Dual N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are # 6A, 30 V. Rogon, = 0.028 Q @ Veg = 10 V produced using Fairchild Semiconductor's Rogion) = 0-035 @ Veg = 4.5 V. advanced PowerTrench process that has been = Fast switching speed. especially tailored to minimize the on-state resistance and yet maintain superior switching performance. = High performance trench technology for extremely low These devices are well suited for low voltage and Rogion): battery powered applications where low in-line power loss and fast switching are required. = Low gate charge (typical 9 nC). = High power and current handling capability. es a [=| |) fo] [oy =} fe] [+] Ts Absolute Maximum Ratings = 7, = 25C unless other wise noted Symbol | Parameter FDS6912A Units Voss Drain-Source Voltage 30 Vv Vass Gate-Source Voltage +20 Vv lp Drain Current - Continuous (Note 1a) 6 A - Pulsed 20 P, Power Dissipation for Single Operation _(Note 1a) 2 Ww (Note 1b) 16 (Note 1c) 0.9 Ty Tete Operating and Storage Temperature Range -55 to 150 C THERMAL CHARACTERISTICS Raa Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W Rac Thermal Resistance, Junction-to-Case (Note 1) 40 C/W 1998 Fairchild Semiconductor Corporation FDS6912A Rev.cElectrical Characteristics (T, = 25 C unless otherwise noted ) Symbol | Parameter | Conditions | Min | Typ | Max | Units OFF CHARACTERISTICS BV ogg Drain-Source Breakdown Voltage Veg = OV, 1,= 250 pA 30 Vv ABV jge/AT, | Breakdown Voltage Temp. Coefficient |,= 250 pA, Referenced to 25 C 23 mV C loss Zero Gate Voltage Drain Current Vo5p = 24 V, Vag= OV 1 pA T, = 55C 10 pA lasse Gate - Body Leakage, Forward Veg = 20V,V,,= OV 100 nA laser Gate - Body Leakage, Reverse Veg = -20V, Vig= OV -100 nA ON CHARACTERISTICS (note2) Vest Gate Threshold Voltage Vos = Veg: |p = 250 pA 1 15 3 Vv AVcgin/AT, Gate Threshold Voltage Temp. Coefficient |,= 250 pA, Referenced to 25 C -4 mV C Rogon) Static Drain-Source On-Resistance Veg=10V, 1,=6A 0.023 | 0.028 Q Ty =125C 0.036 | 0.044 Veg =4.5V, 1,=5A 0.029 | 0.035 lncony On-State Drain Current Veg = 10V, Vo, =5V 20 A Ors Forward Transconductance Vog= 15V, 1 p= 6A 18 Ss DYNAMIC CHARACTERISTICS C,, Input Capacitance Vp = 15 V, Vag = OV, 830 pF Cy. Output Capacitance f= 1.0 MHz 185 pF C,.. Reverse Transfer Capacitance 80 pF SWITCHING CHARACTERISTICS | (note 2) tovon) Tum - On Delay Time Vog= 15 V, 1 p= 1A 6 12 ns t Turn - On Rise Time Ves =10V, Rog =6 Q 10 18 ns tan Turn - Off Delay Time 18 29 ns 4 Turn - Off Fall Time 5 12 ns Q, Total Gate Charge Vog = 15 V, 1, =7.5A, 9 13 nc Q,, Gate-Source Charge Veg= 5 V 28 nc Quy, Gate-Drain Charge 3.1 nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS ly Maximum Continuous Drain-Source Diode Forward Current 13 A Vep Drain-Source Diode Forward Voltage Veg =OV, I= 1.3A (Note2) 0.73 1.2 Vv Notes: 1. Ry, is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R,,, is guaranteed by design while R,,, is determined by the user's board design. J D ibis pp oO at c. 135C/W on a 0.008 in? pad of 20z copper. yoo b. 125C/W on a 0.02 in? ~ pad of 20z copper. _ pad of 20z copper. Og if a. 78C/W on a 0.5 in? S N= or = Om ch Cc oO Q q ) a Scale 1:1 on letter size paper 2. Pulse Test: Pulse Width < 300ps, Duty Cycle < 2.0%. FDS6912A Rev.CTypical Electrical Characteristics Ip, DRAIN-SOURCE CURRENT (A) 0 1 2 3 4 Vpg : DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 1.6 9 Ip=8A < 1.4 Ves =10V Qo Ng Zz E412 a 28 sf 1 63 g 4 cr =08 e a 0.6 -50 -25 0 25 50 75 100 125 150 Ty JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. 25 Vps =5.0V Ty = 65C | | 25C < 20 125C - Zz Fs 15 2 Oo 2 / =z 10 oc a S, ZA , Zp 1 2 3 4 5 Vag. GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Rpson), NORMALIZED DRAIN-SOURCE ON-RESISTANCE R pgon), ON-RESISTANCE (OHM) lg, REVERSE DRAIN CURRENT (A) 0 6 12 18 24 30 Ip . DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Ty = 125C 25C 0 2 4 6 8 10 Vag : GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. Ty= 125C 0.001 0 02 0.4 06 08 1 1.2 14 Vp, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6912A Rev.CTypical Electrical Characteristics 10 1500 = ID=6A lu 9 8 ic 500 5 5 Oo > w Wu Zz 200 z 3 2 H 4 a 100 wl 3 x 6 no G > 0 1 1 1 1 1 1 O14 0.2 05 1 2 5 10 30 0 3 6 9 12 15 18 Vpg. DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 SINGLE PULSE z Rela =135 C/W 5 1 TA = 25C Zz lu c ae 2 2 Oo 2 05 << Veg =10V 3 SINGLE PULSE = 6.05 Resa= 135CAV Ta = 25C 0.15 os. 4 2 5 410 30. 50 0.01 oA 05 10 50 100 300 Vps . DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Wu 0.5 Zz wf R =r)" R 2 02 , eA (t) = r(t) JA 68 Ra =135 CW Ho O14 _ i Z 005 a ze Pipk) Ww 3 xr 0.02 ae te ty ' mat! 5, el z 5 0.01 ty Wu * 2 @ 0.005 Ty-Ta =P "Roa () = z Duty Cycle, D=t, /t, 0.002 0.001 0.0001 0.001 0.01 0.4 1 10 100 300 t,. TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. FDS6912A Rev.C