FEATURES
• High Output Power: P1dB = 39.0dBm (Typ.)
• High Gain: G1dB = 7.0dB (Typ.)
• High PAE: ηadd = 29% (Typ.)
• Low IM3= -46dBc@Po = 28.5dBm
• Broad Band: 10.7 ~ 11.7GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
1
Edition 1.2
August 1999
FLM1011-8F
X, Ku-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
42.8
-65 to +175
175
Tc = 25°C
V
V
W
°C
°C
PT
Tstg
Tch
Condition Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100Ω.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS - 3400 5200
-0.5 -1.5 -3.0
38.5 39.0 -
6.0 7.0 -
VDS = 5V, IDS = 170mA
VDS = 5V, IDS = 2200mA
VDS = 5V, VGS = 0V
IGS = -170µA
VDS = 10V
f = 10.7 ~ 11.7 GHz
IDS ≅ 0.65 IDSS(Typ.)
ZS = ZL = 50Ω
mA
V
- 3400 -mS
-5.0 - - V
dB
dBm
gm
Vp
VGSO
P1dB
G1dB
Drain Current - 2200 2600 mAIdsr
Power-Added Efficiency -29- %
ηadd
Gain Flatness --±0.6 dB
∆G
Thermal Resistance Channel to Case -3.0 3.5 °C/W
CASE STYLE: IB
Rth
3rd Order Intermodulation
Distortion
f = 11.7GHz, ∆f = 10MHz
2-Tone Test
Pout = 28.5dBm S.C.L.
-44 -46 - dBc
IM3
Test Conditions Unit
Limit
Typ. Max.Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
10V x Idsr x Rth
Channel Temperature Rise --80 °C
∆Tch
DESCRIPTION
The FLM1011-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
2
FLM1011-8F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
30
50
40
20
10
050 100 150 200
Case Temperature (°C)
Total Power Dissipation (W)
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 11.7 GHz
f2 = 11.71 GHz
2-tone test
16 2018 22 24
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
Output Power (S.C.L.) (dBc)
-40
-30
-20
-50
27
25
23
29
31
33
IM3 (dBc)
Pout
IM3
OUTPUT POWER vs. FREQUENCY
Pin=33dBm
31dBm
29dBm
27dBm
10.7 11.4511.210.95 11.7
Frequency (GHz)
36
37
38
39
40
35
Output Power (dBm)
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
29
31
33
35
37
39
23 25 27 29 31 33
30
15
Input Power (dBm)
Output Power (dBm)
ηadd
Pout
ηadd (%)
VDS=10V
f = 11.2 GHz
3
FLM1011-8F
X, Ku-Band Internally Matched FET
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180°
+90°
0°
-90°
S21
S12
SCALE FOR |S21|
SCALE FOR |S12|
0.2
0.1
50Ω
10 12
3
4
11.7 11.7
11.9
11.9
11.3
11.3
10.5 GHz
10.5 GHz
10.7
10.7
10.9
10.9
11.1
11.1
11.5 11.5
11.7
11.7
11.9
11.9
11.3
11.3 10.5 GHz
10.5 GHz
10.7
11.1
11.1
11.5
11.5
10.9
10.7
10.9
S-PARAMETERS
VDS = 10V, IDS = 2200mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
10500 .638 13.3 2.349 110.3 .066 93.2 .386 -83.3
10600 .630 5.4 2.376 100.3 .071 83.2 .358 -93.7
10700 .617 -2.6 2.410 89.8 .074 73.3 .326 -106.9
10800 .597 -10.6 2.446 78.9 .076 63.9 .299 -122.1
10900 .570 -18.9 2.476 68.3 .081 53.1 .283 -140.5
11000 .539 -27.5 2.513 57.0 .082 43.1 .282 -161.2
11100 .498 -36.2 2.544 45.3 .083 32.6 .297 179.1
11200 .449 -45.8 2.563 33.5 .087 22.7 .324 161.1
11300 .397 -55.9 2.565 21.5 .088 12.3 .356 146.0
11400 .337 -67.2 2.561 9.2 .090 0.3 .386 133.2
11500 .276 -80.6 2.548 -2.8 .090 -10.3 .411 122.1
11600 .217 -97.8 2.528 -14.9 .089 -21.7 .425 112.3
11700 .167 -124.5 2.519 -27.2 .093 -32.9 .429 103.1
11800 .143 -162.8 2.509 -39.7 .090 -44.9 .419 94.1
11900 .168 157.8 2.502 -52.6 .093 -57.6 .399 84.4
Download S-Parameters, click here
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FLM1011-8F
X, Ku-Band Internally Matched FET
2-R 1.6±0.15
(0.063)
0.6
(0.024)
10.7
(0.421)
12.0
(0.422)
17.0±0.15
(0.669)
21.0±0.15
(0.827)
12.9±0.2
(0.508)
2.0 Min.
(0.079)
2.0 Min.
(0.079)
0.2 Max.
(0.008)
1.45
(0.059)
Case Style "IB"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
5.2 Max.
(0.205)
2.6±0.15
(0.102)
0.1
(0.004)
1
2
3
