VISHAY
1N4148.1N4448
Document Number 85521
Rev. 1.6, 14-May-04
Vishay Semiconductors
www.vishay.com
1
94 9367
Small Signal Fast Switching Diodes
Features
Silicon Epitaxial Planar Diodes
Electrically equivalent diodes: 1N4148 - 1N914
1N4448 - 1N914B
Applications
Extreme fast switches
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 125 mg
Packaging Codes/Options:
TR / 10 k per 13 " reel (52 mm tape), 50 k/box
TAP / 10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Part Type differentiation Ordering code Remarks
1N4148 VRRM = 100 V, VF @ IF 10 mA = 1 V 1N4148-TAP or 1N4148-TR Ammopack / Tape and Reel
1N4448 VRRM = 100 V, VF @ IF 100 mA = 1 V 1N4448-TAP or 1N4448-TR Ammopack / Tape and Reel
Parameter Test condition Symbol Value Unit
Repetitive peak reverse voltage VRRM 100 V
Reverse voltage VR75 V
Peak forward surge current tp = 1 µsI
FSM 2A
Repetitive peak forward current IFRM 500 mA
Forward current IF300 mA
Average forward current VR = 0 IFAV 150 mA
Power dissipation l = 4 mm, TL = 45 °C PV440 mW
l = 4 mm, TL 25 °C PV500 mW
Parameter Test condition Symbol Value Unit
Junction ambient l = 4 mm, TL = constant RthJA 350 K/W
Junction temperature Tj200 °C
Storage temperature range Tstg - 65 to + 200 °C
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Document Number 85521
Rev. 1.6, 14-May-04
VISHAY
1N4148.1N4448
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Part Symbol Min Typ. Max Unit
Forward voltage IF = 5 mA 1N4448-TR VF0.62 0.72 V
IF = 10 mA 1N4148-TR VF1V
IF = 100 mA 1N4448-TR VF1V
Reverse current VR = 20 V IR25 nA
VR = 20 V, Tj = 150 °C IR50 µA
VR = 75 V IR5µA
Breakdown voltage IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
V(BR) 100 V
Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD4pF
Rectification efficiency VHF = 2 V, f = 100 MHz ηr45 %
Reverse recovery time IF = IR = 10 mA, iR = 1 mA trr 8ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100
trr 4ns
Fig. 1 Forward Voltage vs. Junction Temperature
Fig. 2 Forward Current vs. Forward Voltage
0
0.2
0.4
0.6
0.8
1.2
V - Forward Voltage(V)
F
Tj- Junction Temperature (°C)
94 9169
1.0 IF= 100 mA
10 mA
1mA
0.1 mA
-30 30 60 90 1200
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current ( mA )
F
VF- Forward Voltage(V)
2.0
94 9170
Scattering Limit
T=25°C
j
1N4148
Fig. 3 Forward Current vs. Forward Voltage
Fig. 4 Reverse Current vs. Reverse Voltage
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current ( mA )
F
VF- Forward Voltage(V)
2.0
94 9171
Scattering Limit
T=25°C
j
1N4448
1
10
100
1000
I - Reverse Current ( nA )
R
VR- Reverse Voltage(V)
101 100
94 9098
Tj=25°C
Scattering Limit
VISHAY
1N4148.1N4448
Document Number 85521
Rev. 1.6, 14-May-04
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
Cathode Identification
2.0 (0.08) max.
0.55 (0.02) max.
3.9 (0.15) max.26 (1.02) min.
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35 26 (1.02) min.
ISO Method E
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Document Number 85521
Rev. 1.6, 14-May-04
VISHAY
1N4148.1N4448
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423