ON Semiconductor NPN High-Voltage - High Power Transistors 2N5631 PNP 2N6031 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. * High Collector Emitter Sustaining Voltage - * * 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS VCEO(sus) = 140 Vdc High DC Current Gain - @ IC = 8.0 Adc hFE = 15 (Min) Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III MAXIMUM RATINGS (1) Rating Collector-Emitter Voltage Symbol Value Unit VCEO 140 Vdc Collector-Base Voltage VCB 140 Vdc Emitter-Base Voltage VEB 7.0 Vdc Collector Current - Continuous Peak IC 16 20 Adc Base Current - Continuous IB 5.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 200 1.14 Watts W/C TJ, Tstg -65 to +200 C Operating and Storage Junction Temperature Range CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS (1) Characteristic Thermal Resistance, Junction to Case Symbol Max Unit JC 0.875 C/W (1) Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) 200 150 100 50 0 0 20 40 60 80 100 120 140 TC, TEMPERATURE (C) 160 180 200 Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed. Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 0 1 Publication Order Number: 2N5631/D 2N5631 2N6031 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 140 - Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (2) (IC = 200 mAdc, IB = 0) VCEO(sus) Collector-Emitter Cutoff Current (VCE = 70 Vdc, IB = 0) Vdc ICEO mAdc - 2.0 - - 2.0 7.0 Collector-Emitter Cutoff Current (VCE = Rated VCB, VEB(off) = 1.5 Vdc) (VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150C) ICEX mAdc Collector-Base Cutoff Current (VCB = Rated VCB, IE = 0) ICBO - 2.0 mAdc Emitter-Base Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO - 5.0 mAdc 15 4.0 60 - - - 1.0 2.0 ON CHARACTERISTICS (2) DC Current Gain (IC = 8 Adc, VCE = 2.0 Vdc) (IC = 16 Adc, VCE = 2.0 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 16 Adc, IB = 4.0 Adc) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) VBE(sat) - 1.8 Vdc Base-Emitter On Voltage (IC = 8.0 Adc, VCE = 2.0 Vdc) VBE(on) - 1.5 Vdc fT 1.0 - MHz Cob - - 500 1000 pF hfe 15 - - DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (3) (IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5631 2N6031 Small-Signal Current Gain (IC = 4.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (2) fT = |hfe| * ftest VCC +30 V 25 s RC +11 V 51 t, TIME (s) SCOPE RB 0 -9.0 V 3.0 2.0 D1 tr, tf 10 ns DUTY CYCLE = 1.0% -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TJ = 25C IC/IB = 10 VCE = 30 V 1.0 0.7 0.5 tr 0.3 0.2 td @ VBE(off) = 5.0 V 0.1 0.07 0.05 0.03 0.2 0.3 For PNP test circuit, reverse all polarities and D1. Figure 2. Switching Times Test Circuit 2N5631 2N6031 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn-On Time http://onsemi.com 2 10 20 2N5631 2N6031 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.5 0.2 0.2 0.1 0.1 P(pk) JC(t) = r(t) JC JC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.05 0.05 0.02 0.01 SINGLE PULSE 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1.0 5.0 10 t, TIME (ms) 2.0 20 50 100 200 500 1000 2000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 5.0ms 10 7.0 5.0 dc 3.0 50ms TJ = 200C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C 2.0 1.0 0.7 0.5 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 200C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1.0ms 0.5ms CURVES APPLY BELOW RATED VCEO 0.3 0.2 2.0 3.0 2N5631, 2N6031 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 Figure 5. Active-Region Safe Operating Area NPN 2N5631 PNP 2N6031 5.0 4.0 3.0 ts TJ = 25C IC/IB = 10 IB1 = IB2 VCE = 30 V 3.0 2.0 t, TIME (s) 2.0 1.0 0.5 0.2 0.3 2.0 3.0 0.5 0.7 1.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 1.0 0.6 0.4 tf 0.7 TJ = 25C IB1 = IB2 IC/IB = 10 VCE = 30 V ts tf 0.3 10 0.2 0.2 20 0.3 Figure 6. Turn-Off Time http://onsemi.com 3 0.5 0.7 1.0 5.0 7.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 10 20 2N5631 2N6031 NPN 2N5631 PNP 2N6031 1000 2000 TJ = 25C C, CAPACITANCE (pF) C, CAPACITANCE (pF) 700 500 Cib 300 200 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 100 700 500 Cib 300 Cob 100 0.2 TJ = 25C 1000 200 200 Cob 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 100 200 Figure 7. Capacitance 500 500 TJ = 150C 25C 100 70 50 300 200 VCE = 2.0 V VCE = 10 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 300 200 -55C 30 20 10 7.0 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) VCE = 2.0 V VCE = 10 V +25C 100 70 50 -55C 30 20 10 7.0 5.0 0.2 0.3 20 10 TJ = +150C 0.5 0.7 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain TJ = 25C 1.6 1.2 IC = 4.0 A 8.0 A 16 A 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) 2.0 3.0 5.0 2.0 TJ = 25C 1.6 1.2 IC = 4.0 A 16 A 0.8 0.4 0 0.05 0.07 0.1 Figure 9. Collector Saturation Region http://onsemi.com 4 8.0 A 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) 2.0 3.0 5.0 2N5631 2N6031 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N5631 2N6031 Notes http://onsemi.com 6 2N5631 2N6031 Notes http://onsemi.com 7 2N5631 2N6031 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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