ES3F, ES3G
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Revision: 25-Feb-16 1Document Number: 88590
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Surface Mount Ultrafast Plastic Rectifier
FEATURES
Glass passivated pellet chip junction
Ideal for automated placement
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 3.0 A
VRRM 300 V, 400 V
IFSM 100 A
trr 35 ns
VF at IF1.1 V
TJ max. 150 °C
Package DO-214AB (SMC)
Diode variations Single die
DO-214AB (SMC)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES3F ES3G UNIT
Device marking code EF EG
Maximum repetitive peak reverse voltage VRRM 300 400 V
Working peak reverse voltage VRWM 225 300 V
Maximum RMS voltage VRMS 210 280 V
Maximum average forward rectified current at TL = 110 °C IF(AV) 3.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 100 A
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
ES3F, ES3G
www.vishay.com Vishay General Semiconductor
Revision: 25-Feb-16 2Document Number: 88590
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas
Note
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL ES3F ES3G UNIT
Maximum instantaneous forward voltage 3.0 A VF (1) 1.1 V
Maximum DC reverse current at working
peak reverse voltage
TA = 25 °C IR
10 µA
TA = 100 °C 350
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 35 ns
Maximum reverse recovery time IF = 1.0 A, dI/dt = 100 A/μs,
VR = 30 V, Irr = 0.1 IRM trr 50 ns
Maximum reverse recovery current IF = 1.0 A, dI/dt = 100 A/μs,
VR = 30 V, Irr = 0.1 IRM IRM 3.0 A
Maximum stored charge IF = 1.0 A, dI/dt = 100 A/μs,
VR = 30 V, Irr = 0.1 IRM Qrr 50 nC
Typical junction capacitance 4.0 V, 1 MHz CJ30 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES3F ES3G UNIT
Typical thermal resistance RJA (1) 50 °C/W
RJL (1) 15
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES3G-E3/57T 0.211 57T 850 7" diameter plastic tape and reel
ES3G-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel
ES3GHE3_A/H (1) 0.211 H 850 7" diameter plastic tape and reel
ES3GHE3_A/I (1) 0.211 I 3500 13" diameter plastic tape and reel
ES3F, ES3G
www.vishay.com Vishay General Semiconductor
Revision: 25-Feb-16 3Document Number: 88590
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Reverse Switching Characteristics
Fig. 6 - Typical Junction Capacitance
0
3.0
80 90 100 110 120 130 140 150
2.0
1.0
Resistive or Inductive Load
Lead Temperature (°C)
Average Forward Rectified Current (A)
0
25
50
75
100
125
150
1100
10
8.3 ms Single Half Sine-Wave
at TL = 110 °C
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
100
10
1
0.1
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
020406080 100
10 000
1000
100
10
1
0.1
Instantaneous Reverse Leakage
Current (µA)
25 50 75 100 125 150 175
80
40
120
160
200
0
t
rr
Q
rr
at 5 A, 50 A/µs
at 2 A, 20 A/µs
at 5 A, 50 A/µs
at 2 A, 20 A/µs
at 1 A, 100 A/µs
at 1 A, 100 A/µs
Junction Temperature (°C)
Recovered Stored Charge/
Reverse Recovery Time nC/ns
0.1 1 10 100
Reverse Voltage (V)
100
10
1
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
ES3F, ES3G
www.vishay.com Vishay General Semiconductor
Revision: 25-Feb-16 4Document Number: 88590
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Forward Power Loss Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.8
D = 1.0
D = 0.5
D = tp/T tp
T
Cathode Band
DO-214AB (SMC)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.103 (2.62)
0.079 (2.06)
Mounting Pad Layout
0.126 (3.20) MIN.
0.060 (1.52) MIN.
0.185 (4.69) MAX.
0.320 (8.13) REF.
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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