IRF3704/3704S/3704L
2www.irf.com
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 216 mJ
IAR Avalanche Current––– 71 A
Avalanche Characteristics
S
D
G
Diode Characteristics
77
308 A
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 42 ––– ––– SV
DS = 10V, ID = 57A
QgTotal Gate Charge ––– 19 ––– ID = 28.4A
Qgs Gate-to-Source Charge ––– 8.1 ––– nC VDS = 10V
Qgd Gate-to-Drain ("Miller") Charge ––– 6.4 ––– VGS = 4.5V
Qoss Output Gate Charge ––– 16 24 VGS = 0V, VDS = 10V
td(on) Turn-On Delay Time ––– 8.4 ––– VDD = 10V
trRise Time ––– 98 ––– ID = 28.4A
td(off) Turn-Off Delay Time ––– 12 ––– RG = 1.8Ω
tfFall Time ––– 5.0 ––– VGS = 4.5V
Ciss Input Capacitance ––– 1996 ––– VGS = 0V
Coss Output Capacitance ––– 1085 ––– VDS = 10V
Crss Reverse Transfer Capacitance ––– 155 ––– pF ƒ = 1.0MHz
VSD Diode Forward Voltage
Symbol Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
––– 0.88 1.3 V TJ = 25°C, IS = 35.5A, VGS = 0V
––– 0.82 ––– TJ = 125°C, IS = 35.5A, VGS = 0V
trr Reverse Recovery Time ––– 38 57 ns TJ = 25°C, IF = 35.5A, VR=20V
Qrr Reverse Recovery Charge ––– 45 68 nC di/dt = 100A/µs
trr Reverse Recovery Time ––– 41 62 ns TJ = 125°C, IF = 35.5A, VR=20V
Qrr Reverse Recovery Charge ––– 50 75 nC di/dt = 100A/µs
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– VV
GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.3 9.0 VGS = 10V, ID = 15A
––– 9.8 13.5 VGS = 4.5V, ID = 12A
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 16V, VGS = 0V
––– ––– 100 VDS = 16V, VGS = 0V, T J = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance mΩ