www.irf.com 18/22/00
IRF3704
IRF3704S
SMPS MOSFET
HEXFET® Power MOSFET
Benefits
lUltra-Low Gate Impedance
lVery Low RDS(on)
lFully Characterized Avalanche Voltage
and Current
VDSS RDS(on) max ID
20V 9.0mΩ77A
Notes through are on page 10
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 20 V
VGS Gate-to-Source Voltage ± 20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 77
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 64 A
IDM Pulsed Drain Current308
PD @TC = 25°C Maximum Power Dissipation 87 W
PD @TC = 70°C Maximum Power Dissipation 61 W
Linear Derating Factor 0.59 mW/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
D2Pak
IRF3704S
TO-220AB
IRF3704 TO-262
IRF3704L
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.73
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient––– 62
RθJA Junction-to-Ambient (PCB mount)* ––– 40
IRF3704L
lHigh Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
Applications
lHigh Frequency Buck Converters for
Computer Processor Power
PD - 93888B
IRF3704/3704S/3704L
2www.irf.com
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 216 mJ
IAR Avalanche Current––– 71 A
Avalanche Characteristics
S
D
G
Diode Characteristics
77
308 A
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 42 ––– ––– SV
DS = 10V, ID = 57A
QgTotal Gate Charge ––– 19 ––– ID = 28.4A
Qgs Gate-to-Source Charge ––– 8.1 ––– nC VDS = 10V
Qgd Gate-to-Drain ("Miller") Charge ––– 6.4 ––– VGS = 4.5V
Qoss Output Gate Charge ––– 16 24 VGS = 0V, VDS = 10V
td(on) Turn-On Delay Time ––– 8.4 ––– VDD = 10V
trRise Time ––– 98 ––– ID = 28.4A
td(off) Turn-Off Delay Time ––– 12 ––– RG = 1.8Ω
tfFall Time ––– 5.0 ––– VGS = 4.5V
Ciss Input Capacitance ––– 1996 ––– VGS = 0V
Coss Output Capacitance ––– 1085 ––– VDS = 10V
Crss Reverse Transfer Capacitance ––– 155 ––– pF ƒ = 1.0MHz
VSD Diode Forward Voltage
Symbol Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
––– 0.88 1.3 V TJ = 25°C, IS = 35.5A, VGS = 0V
––– 0.82 ––– TJ = 125°C, IS = 35.5A, VGS = 0V
trr Reverse Recovery Time ––– 38 57 ns TJ = 25°C, IF = 35.5A, VR=20V
Qrr Reverse Recovery Charge ––– 45 68 nC di/dt = 100A/µs
trr Reverse Recovery Time ––– 41 62 ns TJ = 125°C, IF = 35.5A, VR=20V
Qrr Reverse Recovery Charge ––– 50 75 nC di/dt = 100A/µs
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– VV
GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.3 9.0 VGS = 10V, ID = 15A
––– 9.8 13.5 VGS = 4.5V, ID = 12A
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 16V, VGS = 0V
––– ––– 100 VDS = 16V, VGS = 0V, T J = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance mΩ
IRF3704/3704S/3704L
www.irf.com 3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
3.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
3.5V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 10.0V
9.00V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
10
100
1000
3.0 4.0 5.0 6.0 7.0 8.0
V = 15V
20
µ
s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
77A
IRF3704/3704S/3704L
4www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
1 10 100
0
500
1000
1500
2000
2500
3000
V , Drain-to-Source Volta
g
e (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Ciss
Coss
Crss
010 20 30 40
0
2
4
6
8
10
Q , Total Gate Char
g
e (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D28.4A
V = 10V
DS
0.1
1
10
100
1000
0.2 0.5 0.8 1.1 1.4 1.7 2.0
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS
(
on
)
Single Pulse
T
T = 175 C
= 25 C
°°
J
C
V , Drain-to-Source Volta
g
e (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRF3704/3704S/3704L
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
25 50 75 100 125 150 175
0
15
30
45
60
75
90
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Dut
y
factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(
THERMAL RESPONSE
)
IRF3704/3704S/3704L
6www.irf.com
Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(
BR
)
DSS
I
AS
RG
IAS
0.01
Ω
t
p
D.U.T
L
VDS
+
-VDD
DRIVER
A
15V
20V
0 50 100 150 200 250 300
ID , Drain Current ( A )
0.005
0.010
0.015
0.020
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
VGS = 4.5V
VGS = 10V
4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate -to -Source Voltage (V)
0.006
0.007
0.008
0.009
0.010
RDS(on), Drain-to -Source On Resistance (Ω)
ID = 35.5A
25 50 75 100 125 150 175
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
11.6A
23.8A
28.4A
Fig 14a&b. Basic Gate Charge Test circuit
and Waveforms
IRF3704/3704S/3704L
www.irf.com 7
LEAD ASSIG NMENTS
1 - GATE
2 - DRAIN
3 - SOURC E
4 - DRAIN
- B -
1.32
(
.052
)
1.22
(
.048
)
3X 0.5 5
(
.022
)
0.4 6
(
.018
)
2.92
(
.115
)
2.64
(
.104
)
4.69
(
.185
)
4.20
(
.165
)
3X 0.93
(
.037
)
0.69
(
.027
)
4.06
(
.160
)
3.55
(
.140
)
1.15
(
.045
)
MIN
6.47
(
.255
)
6.10
(
.240
)
3.78
(
.149
)
3.54
(
.139
)
- A -
10.54
(
.415
)
10.29
(
.405
)
2.87
(
.113
)
2.62
(
.103
)
15.24
(
.600
)
14.84
(
.584
)
14.09
(
.555
)
13.47
(
.530
)
3X 1.40
(
.055
)
1.15
(
.045
)
2.54
(
.100
)
2X
0.36
(
.014
)
M B A M
4
1 2 3
NOTES:
1 DIMENSION ING & T OL ERANCIN G PER ANSI Y 1 4 .5 M, 1 98 2 . 3 OUT L INE CONF ORMS T O J ED EC OUTL INE TO-22 0 AB.
2 CONT ROL L IN G DIMENSION : IN CH 4 H EA TSINK & L EA D MEA SURE MENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
PART NUMBER
INTERNATIONAL
RECTIFIER
L OGO
EXAM PLE : THIS IS AN IRF1010
W IT H A S S EMB L Y
L O T CO DE 9 B1 M
ASSEMBLY
L O T C OD E
DATE CODE
(YYWW)
YY = YEAR
W W = W E EK
9246
IRF1010
9B 1M
A
IRF3704/3704S/3704L
8www.irf.com
D2Pak Package Outline
D2Pak Part Marking Information
10.16 (.400)
REF .
6.47 (.2 55 )
6.18 (.2 43 )
2.61 (.1 03 )
2.32 (.0 91 )
8.89 (.350)
REF .
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5.28 (.2 08 )
4.78 (.1 88 )
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15.49 (.610)
14.73 (.580)
3X 0.93 (.037)
0.69 (.027)
5 .08 (.20 0)
3X 1.40 (.0 55)
1.14 (.0 45)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MA X.
NOTES:
1 DIMENSIONS AFTER SOLDE R DIP .
2 DIMENSIONING & TOLE RANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE B URRS.
0.55 (.022)
0.46 (.018)
0 .2 5 (.0 1 0) M B A M MINIMUM RECOMMENDED F OOTPRINT
11.43 (.450)
8 .89 (.35 0)
17 .78 (.70 0)
3.81 (.1 5 0)
2.08 (.082)
2X
LEAD AS SIGN MENTS
1 - GA TE
2 - DR AIN
3 - SOURCE
2.54 (.100)
2X
PART NUM BER
INTERNATIONAL
RE CTIFIE R
LOG O DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
A S SEMBLY
LOT CO D E
F530S
9B 1M
9246
A
Dimensions are shown in millimeters (inches)
IRF3704/3704S/3704L
www.irf.com 9
TO-262 Part Mar king Infor mation
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IRF3704/3704S/3704L
10 www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 8/00
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 0.5 mH
RG = 25Ω, IAS = 28.4 A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Dimensions are shown in millimeters (inches)
D2Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10 .9 0 (.42 9)
10 .7 0 (.42 1) 16 .1 0 (.63 4)
15 .9 0 (.62 6)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.60 9)
15 .2 2 (.60 1)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0 .3 68 (.0 145)
0 .3 42 (.0 135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
M IN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NO TES :
1. COMFORMS TO EIA-418.
2. CON TRO LLIN G DIM ENSIO N : M ILLIM ET ER.
3. DIMENSION M EASURED @ HU B.
4. INC LUD ES FLAN GE DIS TO RTIO N @ OUTER EDG E.
This is only applied to TO-220AB package
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
