PD - 93888B IRF3704 IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l HEXFET(R) Power MOSFET VDSS RDS(on) max ID 20V 9.0m 77A High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current D2Pak IRF3704S TO-220AB IRF3704 TO-262 IRF3704L Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. Units 20 20 77 64 308 87 61 0.59 -55 to + 175 V V A W W mW/C C Thermal Resistance RJC RCS RJA RJA Parameter Typ. Max. Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)* --- 0.50 --- --- 1.73 --- 62 40 Units C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes through are on page 10 www.irf.com 1 8/22/00 IRF3704/3704S/3704L Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.021 6.3 9.8 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 9.0 VGS = 10V, ID = 15A m 13.5 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 16V, VGS = 0V A 100 VDS = 16V, VGS = 0V, TJ = 125C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 42 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 19 8.1 6.4 16 8.4 98 12 5.0 1996 1085 155 Max. Units Conditions --- S VDS = 10V, ID = 57A --- ID = 28.4A --- nC VDS = 10V --- VGS = 4.5V 24 VGS = 0V, VDS = 10V --- VDD = 10V --- ID = 28.4A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 10V --- pF = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. Max. Units --- --- 216 71 mJ A Diode Characteristics Symbol IS ISM VSD trr Qrr trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units --- --- 77 --- --- 308 --- 0.88 --- 0.82 --- 38 --- 45 --- 41 --- 50 1.3 --- 57 68 62 75 A V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = 35.5A, VGS = 0V TJ = 125C, IS = 35.5A, VGS = 0V TJ = 25C, IF = 35.5A, VR=20V di/dt = 100A/s TJ = 125C, IF = 35.5A, VR=20V di/dt = 100A/s www.irf.com IRF3704/3704S/3704L 1000 VGS TOP 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 100 3.5V 10 VGS 10.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 100 3.5V 10 20s PULSE WIDTH Tj = 175C 20s PULSE WIDTH Tj = 25C 1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 2.0 TJ = 175 C 100 V DS = 15V 20s PULSE WIDTH 6.0 7.0 8.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C 5.0 100 Fig 2. Typical Output Characteristics 1000 4.0 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 3.0 1 ID = 77A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF3704/3704S/3704L VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 2000 1500 C oss 1000 500 ID = 28.4A VDS = 10V 8 6 4 2 C rss 0 1 10 0 100 0 10 VDS , Drain-to-Source Voltage (V) 30 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100 I D , Drain Current (A) TJ = 175 C 100 10 TJ = 25 C 100us 1ms 10 10ms 1 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 1.4 1.7 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD , Reverse Drain Current (A) C, Capacitance (pF) 2500 10 VGS, Gate-to-Source Voltage (V) 3000 2.0 TC = 25 C TJ = 175 C Single Pulse 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF3704/3704S/3704L LIMITED BY PACKAGE VGS 75 I D , Drain Current (A) RD VDS 90 D.U.T. RG + -VDD 60 10V Pulse Width 1 s Duty Factor 0.1 % 45 Fig 10a. Switching Time Test Circuit 30 VDS 15 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.020 RDS(on) , Drain-to -Source On Resistance ( ) R DS ( on ) , Drain-to-Source On Resistance ( ) IRF3704/3704S/3704L VGS = 4.5V 0.015 0.010 VGS = 10V 0.005 0 50 100 150 200 250 0.010 0.009 0.008 ID = 35.5A 0.007 0.006 4.0 300 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) ID , Drain Current ( A ) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2F QGS .3F D.U.T. + V - DS QGD VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test circuit and Waveforms 15V V (B R )D S S tp L VD S D.U .T RG IA S 20 V tp IAS DRIVER + - VD D 0.0 1 Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 600 VG EAS , Single Pulse Avalanche Energy (mJ) 50K 12V A ID 11.6A 23.8A BOTTOM 28.4A TOP 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF3704/3704S/3704L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) -B - 3 .7 8 (.1 4 9 ) 3 .5 4 (.1 3 9 ) 4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) -A - 1 .3 2 (.05 2 ) 1 .2 2 (.04 8 ) 6 .4 7 (.2 5 5 ) 6 .1 0 (.2 4 0 ) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 .1 5 (.0 4 5 ) M IN 1 2 3 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 4 .0 6 (.1 6 0 ) 3 .5 5 (.1 4 0 ) 3X 1 .4 0 (.0 5 5 ) 3X 1 .1 5 (.0 4 5 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN 0 .93 (.0 3 7 ) 0 .69 (.0 2 7 ) 0 .3 6 (.0 1 4 ) 3X M B A M 0.5 5 (.0 2 2 ) 0.4 6 (.0 1 8 ) 2 .9 2 (.11 5 ) 2 .6 4 (.10 4 ) 2 .5 4 (.1 0 0 ) 2X N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . TO-220AB Part Marking Information E X A M P L E : T H IS IS A N IR F 1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M A IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEMBLY LOT CODE www.irf.com PART NU M BER IR F 1 0 1 0 9246 9B 1M D ATE CO DE (Y Y W W ) YY = YEAR W W = W EEK 7 IRF3704/3704S/3704L D2Pak Package Outline Dimensions are shown in millimeters (inches) 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 10 .1 6 (.4 00 ) R E F. -B- 4 .6 9 (.18 5) 4 .2 0 (.16 5) 6.47 (.2 55 ) 6.18 (.2 43 ) 3 1 5.49 (.6 10) 1 4.73 (.5 80) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5.28 (.2 08 ) 4.78 (.1 88 ) 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0.55 (.0 22) 0.46 (.0 18) 0.9 3 (.0 37 ) 3X 0.6 9 (.0 27 ) 0.25 (.0 10 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) B A M M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8 .89 (.35 0) 17 .78 (.70 0) 3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E 8 A PART NUM BER F530S 9 24 6 9B 1M DATE CODE (Y YW W ) YY = Y E A R W W = W EEK www.irf.com IRF3704/3704S/3704L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information www.irf.com 9 IRF3704/3704S/3704L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TR R 1 .6 0 (.0 63 ) 1 .5 0 (.0 59 ) 4 .1 0 ( .1 6 1) 3 .9 0 ( .1 5 3) F E ED D IRE C TIO N 1 .8 5 (.0 7 3 ) 1.60 (.06 3) 1.50 (.05 9) 1 1.60 (.457 ) 1 1.40 (.449 ) 1 .6 5 (.0 6 5 ) 0 .3 68 (.0 145 ) 0 .3 42 (.0 135 ) 15 .4 2 (.60 9) 15 .2 2 (.60 1) 24.30 (.95 7) 23.90 (.94 1) TR L 10 .9 0 (.42 9) 10 .7 0 (.42 1) 1.75 (.0 69 ) 1.25 (.0 49 ) 4 .7 2 (.13 6) 4 .5 2 (.17 8) 16 .1 0 (.63 4) 15 .9 0 (.62 6) F E ED D IR E CT IO N 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 33 0.00 (14.173) M AX . 60.00 (2.362) M IN. NO TE S : 1. CO MF OR M S TO EIA-418. 2. CO N TRO LLIN G DIM ENSIO N : MILLIM ET ER . 3. DIM ENS ION MEAS URED @ HU B. 4. INC LUD ES FLAN GE DIS TO RTIO N @ OU TER ED G E. 30.40 (1.197) MA X. 26.40 (1.039) 24.40 (.961) 4 3 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.5 mH RG = 25, IAS = 28.4 A. Pulse width 300s; duty cycle 2%. This is only applied to TO-220AB package Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 8/00 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/