©2000 Fairchild Semiconductor International Rev. A, February 2000
KSA1156
PNP Silicon Transis tor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
hFE Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage - 400 V
VCEO Collector-Emitter Voltage - 400 V
VEBO Emitter-Base Voltage - 7 V
IBBase Current - 0.25 A
ICCollector Current (DC) - 0.5 A
ICP Collector Current (Pulse) - 1 A
PCCollector Dissipation (Ta=25°C) 1 W
PCCollector Dissipation (TC=25°C) 10 W
TJJunction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage IC = - 100mA, IB = - 10mA
L = - 20mH - 400 V
VCEX(sus) Collector-Emitter Sustaining Voltage
IC = - 200mA, IB1 = - IB2 = - 20mA
VBE(off)= 5V, L = 10mH - 400 V
ICBO Collector Cut-off Current VCB = - 400V, IE = 0 - 100 µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 10 µA
ICEX1 Collector Cut-off Current VCE = - 400V, VBE(off) = 1.5V - 100 µA
ICEX2 Collector Cut-off Current VCE = - 400V, VBE(off) = 1.5V
TC= 125°C- 1 mA
hFE DC Current Gain VCE = - 5V, IC = - 100mA 30 200
VCE(sat) Collector-Emitter Satu ration Voltage IC = - 100mA, IB = - 10mA - 1 V
VBE(sat) Base-Emitter Saturation Voltage IC = - 100mA, IB = - 10mA - 1.2 V
tON Turn On Time VCC = - 150V, IC = - 100mA
IB1= - 10mA , IB2 = 20mA
RL = 1.5KΩ
1µs
tSTG Storage Time 4µs
tFFall Time 1µs
Classification N R O Y
hFE 30 ~ 60 40 ~ 80 60 ~ 120 100 ~ 200
KSA1156
High Voltage Switching
Low Power Switching Regulator
DC-DC Converte r
• High Breakdown Voltage
• Low Collector Saturation Voltage
• High Speed Switching 1TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
KSA1156
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC
current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Figure 4. Safe Operating Area
Figure 5. Reverse Bias Safe Operating Area Figure 6. Derating Curve of Safe Operating Areas
-0 -2 -4 -6 -8 -10
-0.0
-0.1
-0.2
-0.3
-0.4
-0.5
IB = -200mA
IB = -180mA
IB = -80mA
IB = -120mA
IB = -160mA
IB = -60mA
IB = -100mA
IB = -140mA
IB = -40mA
IB = -20mA
IC[A], COLLECTOR CURRENT
VCE[V], CO LL EC TOR- EM ITTE R VOLT A GE
-0.1 -1 -10 -100 -1000
1
10
100
1000
VCE = -5V
Puls e T est
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100 -1000
-0.01
-0.1
-1
-10
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000
-1E-3
-0.01
-0.1
-1
-10
S/b LIMIT ED
10㎲
1ms
DISSIPATION
LIMITED
DC
VCEOMAX.
100㎲
IC MAX. (Pulse)
IC[A], COLLECTOR CURRENT
VCE[V], COLLE CT OR -E MITTER VOL TA G E
-0 -100 -200 -300 -400 -500
-0
-50
-100
-150
-200
-250
IC(mA), COLLECTOR CURRENT
VCE(v), COLLECTOR EMITTER VOLTA GE
0 50 100 150 200
0
20
40
60
80
100
120
140
160
Dissipation Limited
S/b Limited
dT(%),IcDERATING
TC[oC], CASE TEMPERATURE
©2000 Fairchild Semiconductor International
KSA1156
Rev. A, February 2000
Typical character istics (Continued)
Figure 7. Power Derating
0 50 100 150 200
0
2
4
6
8
10
12
14
16
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSA1156
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2000 Fairchild Semiconductor International Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
