FDC6321CD84Z - Fairchild Semiconductor Corporation

April 1999

FDC6321C

Dual N & P Channel , Digital FET

General Description Features

Absolute Maximum Ratings TA = 25oC unless other wise noted

Symbol Parameter N-Channel P-Channel Units

VDSS, VCC Drain-Source Voltage, Power Supply Voltage 25 -25 V

VGSS, VIN Gate-Source Voltage, 8-8 V

ID, IODrain/Output Current - Continuous 0.68 -0.46 A

- Pulsed 2-1.5

PDMaximum Power Dissipation (Note 1a)

(Note 1b)0.9 W

0.7

TJ,TSTG Operating and Storage Tempature Ranger-55 to 150 °C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm) 6kV

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)140 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W

FDC6321C.RevB

N-Ch 25 V, 0.68 A, RDS(ON) = 0.45 Ω @ VGS= 4.5 V

P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 Ω @ VGS= -4.5 V.

Very low level gate drive requirements allowing direct

operation in 3 V circuits. VGS(th) < 1.0V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Replace multiple dual NPN & PNP digital transistors.

These dual N & P Channel logic level enhancement mode

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance. This device has been designed

especially for low voltage applications as a replacement for

digital transistors in load switching applications. Since bias

resistors are not required this dual digital FET can replace

several digital transistors with different bias resistors.

SOT-23 SuperSOTTM-8 SOIC-16

SO-8 SOT-223

SuperSOTTM-6

Mark:.321

1

5

3

2

6

4

D1

S2

G1

D2

S1

G2

SuperSOT -6

TM

Electrical Characteristics (TA = 25 OC unless otherwise noted )

Symbol Parameter Conditions Type Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA N-Ch 25 V

VGS = 0 V, ID = -250 µA P-Ch -25

∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID= 250 µA, Referenced to 25 oCN-Ch 26 mV /oC

ID = -250 µA, Referenced to 25 oCP-Ch -22

IDSS Zero Gate Voltage Drain Current VDS= 20 V, VGS= 0 V, N-Ch 1µA

TJ = 55°C 10

IDSS Zero Gate Voltage Drain Current VDS =-20 V, VGS = 0 V,P-Ch -1 µA

TJ = 55°C -10

IGSS Gate - Body Leakage Current VGS = 8 V, VDS= 0 V N-Ch 100 nA

VGS = -8 V, VDS= 0 V P-Ch -100 nA

ON CHARACTERISTICS (Note 2)

∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o CN-Ch -2.6 mV / oC

ID= -250 µA, Referenced to 25 o CP-Ch 2.1

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µAN-Ch 0.65 0.8 1.5 V

VDS = VGS, ID= -250 µAP-Ch -0.65 -0.86 -1.5

RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 0.5 AN-Ch 0.33 0.45 Ω

TJ =125°C 0.51 0.72

VGS = 2.7 V, ID = 0.25A 0.44 0.6

VGS = -4.5 V, ID = -0.5 A P-Ch 0.87 1.1

TJ =125°C 1.21 1.8

VGS = -2.7 V, ID = -0.25 A1.22 1.5

ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 5 V N-Ch 1A

VGS = -4.5 V, VDS = -5 V P-Ch -1

gFS Forward Transconductance VDS = 5 V, ID= 0.5 AN-Ch 1.45 S

VDS = -5 V, ID= -0.5 A P-Ch 0.8

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance N-Channel N-Ch 50 pF

VDS= 10 V, VGS= 0 V, P-Ch 63

Coss Output Capacitance f = 1.0 MHz N-Ch 28 pF

P-Channel P-Ch 34

Crss Reverse Transfer Capacitance VDS= -10 V, VGS = 0V, N-Ch 9pF

f = 1.0 MHz P-Ch 10

FDC6321C.RevB

Electrical Characteristics (TA = 25 OC unless otherwise noted )

SWITCHING CHARACTERISTICS (Note 2)

Symbol Parameter Conditions Type Min Typ Max Units

tD(on)Turn - On Delay Time N-Channel N-Ch 3 6 nS

VDD = 6 V, ID = 0.5 A, P-Ch 7 20

trTurn - On Rise Time VGs = 4.5 V, RGEN = 50 Ω N-Ch 8 16 nS

P-Ch 9 18

tD(off) Turn - Off Delay Time P-Channel N-Ch 17 30 nS

VDD = -6 V, ID = -0.5 A, P-Ch 55 110

tfTurn - Off Fall Time VGen = -4.5 V, RGEN = 50 Ω N-Ch 13 25 nS

P-Ch 35 70

QgTotal Gate Charge N-Channel N-Ch 1.64 2.3 nC

VDS= 5 V, ID = 0.5 A, P-Ch 1.1 1.5

Qgs Gate-Source Charge VGS = 4.5 V N-Ch 0.38 nC

P- Channel P-Ch 0.32

Qgd Gate-Drain Charge VDS = -5 V, N-Ch 0.45 nC

ID = -0.25 A, VGS = -4.5 V P-Ch 0.25

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current N-Ch 0.3 A

P-Ch -0.5

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A (Note)N-Ch 0.83 1.2 V

TJ =125°C 0.69 0.85

VGS = 0 V, IS = -0.5 A (Note)P-Ch -0.89 -1.2

TJ =125°C -0.75 -0.85

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where thecase thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed

by design while RθCA is determined by the user's board design.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDC6321C.RevB

b. 180OC/W on a 0.005 in2 of pad

of 2oz copper.

a. 140OC/W on a 0.125 in2 pad of

2oz copper.

FDC6321C.RevB

Typical Electrical Characteristics: N-Channel

00.5 11.5 2

0

0.3

0.6

0.9

1.2

1.5

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

3.5

2.7

2.5

2.0

1.5

DS

D

V = 4.5V

GS

3.0

R DS(on), NORMALIZED

00.2 0.4 0.6 0.8 11.2

0.5

1

1.5

2

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = 2.0V

GS

2.7 3.0

4.5

D

3.5

2.5

Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

V = 4.5 V

GS

I =0.5 A

D

R , NORMALIZED

DS(ON)

Figure 3. On-Resistance Variation

with Temperature.

00.5 11.5 22.5

0

0.2

0.4

0.6

0.8

1

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25°C

125°C

V = 5.0V

DS

GS

D

T = -55°C

J

Figure 5. Transfer Characteristics.

00.2 0.4 0.6 0.8 11.2

0.0001

0.001

0.01

0.1

1

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

T = 125°C

J

25°C

-55°C

V = 0V

GS

SD

S

Figure 6. Body Diode Forward Voltage

Variation with Source Current and

Temperature.

Figure 4. On Resistance Variation with

Gate-To-Source Voltage.

11.5 22.5 33.5 44.5 5

0

0.4

0.8

1.2

1.6

2

V , GATE TO SOURCE VOLTAGE (V)

ID= 0.5A

GS

R , ON-RESISTANCE (OHM)

DS(on)

125°C

25°C

FDC6321C.RevB

Typical Electrical Characteristics: N-Channel (continued)

00.4 0.8 1.2 1.6 2

0

1

2

3

4

5

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

g

GS

I = 0.5A

D10V

15V

V = 5V

DS

Figure 10. Single Pulse Maximum Power

Dissipation.

0.1 0.5 1 2 5 10 25

5

10

20

50

100

150

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C

iss

f = 1 MHz

V = 0V

GS

C

oss

C

rss

Figure 8. Capacitance Characteristics.Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

0.01 0.1 110 100 300

0

1

2

3

4

5

SINGLE PULSE TIME (SEC)

POWER (W)

SINGLE PULSE

R =See note 1b

T = 25°C

θJA A

0.1 0.2 0.5 1 2 5 10 20 40

0.01

0.03

0.1

0.3

1

5

V , DRAI N-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = 4.5V

SINGLE PULSE

R = See note 1b

T = 25°C

GS

θJA

DS

D

DC

1s

10ms

100ms

RDS(ON) LIMIT

A

1ms

100µs

FDC6321C.RevB

Typical Electrical Characteristics: P-Channel

012345

0

0.25

0.5

0.75

1

1.25

1.5

-V , DRAIN-SOURCE VOLTAGE (V)

-I , DRAIN-SOURCE CURRENT (A)

V = -4.5V

GS

DS

D

-2.7

-2.5

-2.0

-3.0

-1.5

-3.5

00.2 0.4 0.6 0.8 1

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

-I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = -2.0 V

GS

D

R , NORMALIZED

DS(ON)

-3.5

-4.5

-2.7

-2.5

-3.0

-4.0

Figure 11. On-Region Characteristics.Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE (OHMS)

J

R , NORMALIZED

DS(ON)

V = -4.5V

GS

I = -0.5A

D

Figure 13. On-Resistance Variation

with Temperature.

-3-2.5-2-1.5-1-0.5

-1

-0.75

-0.5

-0.25

0

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = -5 V

DS

GS

D

T = -55°C

J

125°C

25°C

Figure 15. Transfer Characteristics.

00.2 0.4 0.6 0.8 11.2

0.0001

0.001

0.01

0.1

0.5

-V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

T = 125°C

J

25°C

-55°C

V = 0V

GS

SD

S

Figure 16. Body Diode Forward Voltage

Variation with Source Current and

Temperature.

Figure 14. On Resistance Variation with

Gate-To- Source Voltage.

-5-4.5-4-3.5-3-2.5-2-1.5-1

0

1

2

3

4

5

V , GATE TO SOURCE VOLTAGE (V)

ID=-0.5A

GS

R , ON-RESISTANCE (OHM)

DS(on)

125°C

25°C

FDC6321C.RevB

Typical Electrical Characteristics: P-Channel (continued)

Figure 19. Maximum Safe Operating Area.

00.3 0.6 0.9 1.2 1.5 1.8

0

1

2

3

4

5

Q , GATE CHARGE (nC)

-V , GATE-SOURCE VOLTAGE (V)

g

GS

I = -0.5A

D

-15V

V = -5V

DS -10V

Figure 17. Gate Charge Characteristics.

Figure 20. Single Pulse Maximum Power

Dissipation.

0.1 0.3 0.5 1 5 10 15 25

5

10

20

50

100

150

-V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C

iss

f = 1 MHz

V = 0 V

GS

C

oss

C

rss

Figure 18. Capacitance Characteristics.

Figure 21. Transient Thermal Response Curve.

Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal

response will change depending on the circuit board design.

0.0001 0.001 0.01 0.1 1 10 100 300

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

r(t), NORMALIZED EFFECTIVE

Duty Cycle, D = t / t

12

R (t) = r(t) * R

R = See Note 1b

θJA

T - T = P * R (t)

θJA

A

J

P(pk)

t

1 t

2

0.01 0.1 110 100 300

0

1

2

3

4

5

SINGLE PULSE TIME (SEC)

POWER (W)

SINGLE PULSE

R =See note 1b

T = 25°C

θJA A

0.1 0.2 0.5 1 2 5 10 20 40

0.01

0.03

0.1

0.3

1

2

- V , DRAIN-SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

RDS(ON) LIMIT

D

A

DC

DS

1s

100ms

10ms

1ms

V = -4.5V

SINGLE PULSE

R = See Note 1b

T = 25°C

θJA

GS

A

1998 Fairchild Semiconductor Corporation

Embossed

Carrier Tape

SSOT-6 Packaging

Configuration: Fi

g

ure 1.0

Component s Leader Tape

500mm minimum or

125 empt

y

pock ets

Trailer Tape

300mm minimum or

75 empt

y

pock ets

SSOT-6 Tape Leader and Trailer

Configuration: Fi

g

ure 2.0

Cover Tape

Carrier Tape

Note/Comments

Packaging Option

SSOT-6 Packaging Information

Standard

(no flow c ode) D87Z

Packaging type

Reel Size

TNR

7" Dia

TNR

13"

Qty per Reel/Tube/Bag 3,000 10,000

Box Dimension (mm) 184x187x47 343x343x64

Max qty per Box 9,000 30,000

Weight per unit (gm) 0.0158 0.0158

Weight per Reel (kg) 0.1440 0.4700

F63TNR

Label

Customize Label

Antistatic Cover Tape

184mm x 187mm x 47mm

Pizza Box for Standard Option

F63TNR

Label

F63TNR Label

F63TNR Label sample

343mm x 342mm x 64mm

Int erm ed ia te box for D87Z Op t i on

F63TNR

Label

SSOT-6 Unit Orienta tion

631

631631

631 631

Pi n 1

LOT: CBVK7 41B019

FSID: FDC633N

D/C1: D9842 QTY1: SPEC REV:

SPEC:

QTY: 3000

D/C2: QTY2: CPN: N/F: F (F63TNR)3

Packaging Description:

SSOT-6 parts are shipped in tape. The carrier tape is

made from a dissipative (carbon filled) polycarbonate

resin. The cover tape is a multilayer film (Heat Activated

Adhesive in nature) primarily composed of polyester film,

adhesive layer, sealant, and anti-static sprayed agent.

These reeled parts in standard option are shipped with

3,0 00 uni ts p er 7" or 17 7cm di amet er re el. The re els are

dark blue in color and is made of polystyrene plastic (anti-

static coated). Other option comes in 10,000 units per 13"

or 330 cm diam eter re el. Thi s and s ome ot her o ption s are

described in the Packaging Information table.

These full reels are individually barcode labeled and

placed inside a pizz a box (il lustrated in figure 1.0) made of

recyclable corrugated brown paper with a Fairchild logo

printing. One pizza box contains three reels maximum.

And these pizza boxes are placed inside a barcode

labeled shipping box which comes in different sizes

depending o n the n um ber of parts shipped.

SuperSOTTM-6 Tape and Reel Data and Package Dimensions

August 1999, Rev. C

P1

A0 D1

P0

F

W

E1

D0

E2

B0

Tc

Wc

K0

T

Dimensions are in inches and millimeters

Tape Size Reel

Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

8mm 7" Dia 7.00

177.8 0.059

1.5 512 +0.020/-0. 008

13 +0.5/-0.2 0.795

20.2 2.165

55 0.331 +0.059/-0.000

8.4 +1.5/0 0.567

14.4 0.311 – 0.429

7.9 – 10.9

8m m 13" Dia 13.00

330 0.059

1.5 512 +0.020/-0. 008

13 +0.5/-0.2 0.795

20.2 4.00

100 0.331 +0.059/-0.000

8.4 +1.5/0 0.567

14.4 0.311 – 0.429

7.9 – 10.9

See detail AA

Dim A

max

13" Diameter Option

7" Diameter Option

Dim A

Max

See detail AA

W3

W2 max Measured at Hub

W1 Measured at Hub

Dim N

Dim D

min

Dim C

B Min

DETAIL AA

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

20 deg maximum component rotation

0.5mm

maximum

0.5mm

maximum

Sketch C (Top View)

Component lateral movement

Typical

component

cavity

center line

20 deg maximum

Typical

component

center line

B0

A0

Sketch B (Top View)

Component Rotation

Sketch A (Side or Front Sectional View)

Component Rotation

User Direction of Feed

SSOT-6 Embossed Carrier Tape

Configuration: Fi

g

ure 3.0

SSOT-6 Reel Configuration: Fi

g

ure 4.0

Dimensions are in millimeter

Pkg type

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

SSOT-6

(8mm)

3.23

+/-0.10 3.18

+/-0.10 8.0

+/-0.3 1.55

+/-0.05 1.125

+/-0.125 1.75

+/-0.10 6.25

min 3.50

+/-0.05 4.0

+/-0.1 4.0

+/-0.1 1.37

+/-0.10 0.255

+/-0.150 5.2

+/-0.3 0.06

+/-0.02

SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued

July 1999, Rev. C

1998 Fairchild Semiconductor Corporation

SuperSOT -6 (FS PKG Code 31, 33)

SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued

September 1998, Rev. A

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0158

TRADEMARKS

ACEx™

CoolFET™

CROSSVOLT™

E2CMOSTM

FACT™

FACT Quiet Series™

FAST®

FASTr™

GTO™

HiSeC™

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

TinyLogic™

UHC™

VCX™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench™

QFET™

QS™

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8