BPW SERIES SILICON PIN PHOTO DIODES A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, with high rejection of wavelengths less than 700nm. The devices have low junction capacitance and thus are capable of fast switching speeds. SUITABLE APPLICATIONS Filtered options IR remote-control for television, hi-fi systems, slide projectors, model cars, trains, etc., garage door, domestic appliances, automobile security. Perfectly matched to GaAs IRED emission. Clear options General purpose light sensing, street lighting. INFRA-RED PIN DIODE PHOTO DETECTORS CHARACTERISTICS at 25C Photo OD | and Vo Ip at Vp Vor Ap/0.5 Cj ton/tott Device |Sensitive|Package E, =1mWicm? E,=0 = |l,=100pA Va=3V | Va=10V Type | Area | Ref. 4=950nm f=1MHz | R, = 1k Va=5V E,=0 mm? yA mv] nA Vv v nm pF nS BPW41D/ 7.25 | Fig. 6 |65/{>25)45/350/2(<30)/ 10 | >32 925/ 25(<40}/ 50 820 to 1040 BPW41 7.25 | Fig. 7 [+65)(>25)45/350]2(<30)| 10 | >32 925/ 25(< 40) 50 820 to 1040 BPW50 5.0 Fig. 7 |+65)(> 20)32)350)2(<20)| 10 | >32 925/ 20(< 30) 50 820 to 1040 PIN DIODE PHOTO DETECTORS IN CLEAR PLASTIC PACKAGE CHARACTERISTICS at 25C Photo |, and Voc In at Ve Vea Ap/A0.5 C ton/tor Device [Sensitive |Package E, =1000lux* E,=0 Ip=100yA Va=3V | Va=10V Type Area Ref. V_=5V f=1MHz | R, =1k2 Ey =0 mm? yA mV | nA Vv Vv nm pF as BPW41C| 7.25 | Fig. 7 |+65)(>50)82/350| 2(<30)| 10 | >32 850/ 25(< 40) 50 600 to 1020 BPW50C/ 5.0 Fig. 7 }+65!(>35)56] 350) 2(<20)| 10} >32 850/ 20(< 30) 50 600 to 1020 *The illumination source is Standard Iiluminant A {an unfiltered tungsten filament lamp at 2856K colour temperature). 10-7