HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2002.03.28 Page No. : 1/4 HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIP112 is designed for use in general purpose amplifier and lowspeed switching applications. Absolute Maximum Ratings (Ta=25C) TO-220 * Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 C Junction Temperature ................................................................................................ +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C)................................................................................................. 50 W Total Power Dissipation (Ta=25C)................................................................................................... 2 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage ................................................................................................. 100 V BVCEO Collector to Emitter Voltage .............................................................................................. 100 V BVEBO Emitter to Base Voltage ....................................................................................................... 5 V IC Collector Current (Continue) ......................................................................................................... 4 A IC Collector Current (Peak)................................................................................................................ 6 A Characteristics (Ta=25C) Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. 100 100 1 500 - Typ. - Max. 1 2 2 2.5 2.8 200 Unit V V mA mA mA V V K pF Test Conditions IC=1mA IC=30mA VCB=100V VCE=50V VEB=5V IC=2A, IB=8mA IC=2A, VCE=4V IC=1A, VCE=4V IC=2A, VCE=4V VCB=10V, f=0.1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% Darlington Schematic C B R1 R2 E HTIP112 HSMC Product Specification HI-SINCERITY Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2002.03.28 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Current Gain & Collector Current 10000 10000 1000 1000 o 125 C hFE hFE o 75 C o 125 C o 75 C 100 100 o o 25 C 25 C 10 10 hFE @ VCE=4V 1 hFE @ VCE=3V 1 1 10 100 1000 10000 1 10 Collector Current-IC (mA) Saturation Voltage & Collector Current Saturation Voltage (mV) Saturation Voltage (mV) VCE(sat) @ IC=250IB o 25 C o 125 C o 75 C 100 100 1000 o 1000 o o 75 C 100 100 10000 1000 Saturation Voltage & Collector Current ON Voltage & Collcetor Current ON Voltage (mV) 10000 o 25 C o 125 C o 75 C o 25 C 1000 o 125 C o 75 C VBE(sat) @ IC=250IB 1000 Collector Current-IC (mA) HTIP112 10000 Collector Current-IC (mA) 10000 Saturation Voltage (mV) 25 C 125 C Collector Current-IC (mA) 100 100 10000 10000 VCE(sat) @ IC=100IB 1000 1000 Saturation Voltage & Collector Current 10000 1000 100 Collector Current-IC (mA) VBE(ON) @ VCE=4V 10000 100 100 1000 10000 Collector Current-IC (mA) HSMC Product Specification HI-SINCERITY Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2002.03.28 Page No. : 3/4 MICROELECTRONICS CORP. ON Voltage & Collcetor Current Switching Time & Collector Current 10000 10 Switching Times (us).. ON Voltage (mV) VCC=30V,IC=250IB1= -250IB2 o 25 C 1000 o 125 C o 75 C Tstg 1 Tf Ton VBE(ON) @ VCE=3V 100 100 0.1 1000 10000 1 10 Collector Current-IC (mA) Collector Current-IC (A) Capcitance & Reverse-Biased Voltage Safe Operating Area 100 10 PT=1mS Collector Current-IC (A) Capacitance (pF) PT=1S Cob 10 1 PT=100mS 0.1 0.01 0.1 1 10 Reverse Biased Voltage (V) HTIP112 100 1 10 100 Forward Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2002.03.28 Page No. : 4/4 MICROELECTRONICS CORP. TO-220AB Dimension Marking: B A D E H 112 C T IP Control Code Date Code H K M I Style: Pin 1.Base 2.Collector 3.Emitter 3 G N 2 1 4 P O 3-Lead TO-220AB Plastic Package HSMC Package Code: E *: Typical Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 DIM A B C D E G H Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HTIP112 HSMC Product Specification