STP9NK90ZFP - STMicroelectronics - Datasheet.Directory

1/12November 2002

STP6NK90Z - STP6NK90ZFP

STB6NK90Z

N-CHANNEL 900V - 1.75Ω - 5.8A TO-220/TO-220FP/D2PAK

Zener-Protected SuperMESH™Power MOSFET

■TYPICAL RDS(on) = 1.75 Ω

■EXTREMELY HIGH dv/dt CAPABILITY

■100% AVALANCHE TESTED

■GATE CHARGE MINIMIZED

■VERY LOW INTRINSIC CAPACITANCES

■VERY GOOD MANUFACTURING

REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established strip-

based PowerMESH™ layout. In addition to pushing

on-resistance significantly down, special care is tak-

en to ensure a very good dv/dt capability for the

most demanding applications. Such series comple-

ments ST full range of high voltage MOSFETs in-

cluding revolutionary MDmesh™ products.

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

■LIGHTING

ORDERING INFORMATION

TYPE VDSS RDS(on) IDPw

STP6NK90Z

STP6NK90ZFP

STB6NK90Z

900 V

<2Ω

5.8 A

140 W

30 W

140 W

SALES TYPE MARKING PACKAGE PACKAGING

STP6NK90Z P6NK90Z TO-220 TUBE

STP6NK90ZFP P6NK90ZFP TO-220FP TUBE

STB6NK90ZT4 B6NK90Z D2PAK TAPE & REEL

TO-220 TO-220FP

123

D2PAK

INTERNAL SCHEMATIC DIAGRAM

STP6NK90Z - STP6NK90ZFP - STB6NK90Z

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ABSOLUTE MAXIMUM RATINGS

(



) Pulse width limited by safe operating area

(1) ISD ≤5.8A, di/dt ≤200A/µs, VDD ≤V(BR)DSS,T

j≤T

JMAX.

(*) Limited only by maximum temperature allowed

THERMAL DATA

AVALANCHE CHARACTERISTICS

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol Parameter Value Unit

STP6NK90Z / STB6NK90Z STP6NK90ZFP

VDS Drain-source Voltage (VGS =0) 900 V

VDGR Drain-gate Voltage (RGS =20kΩ)900 V

VGS Gate- source Voltage ± 30 V

IDDrain Current (continuous) at TC= 25°C 5.8 5.8 (*) A

IDDrain Current (continuous) at TC= 100°C 3.65 3.65 (*) A

IDM (



)Drain Current (pulsed) 23.2 23.2 (*) A

PTOT Total Dissipation at TC= 25°C 140 30 W

Derating Factor 1.12 0.24 W/°C

VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

Viso Insulation Withstand Voltage (DC) -- 2500 V

Tstg Operating Junction Temperature

Storage Temperature -55 to 150 °C

TO-220 D2PAK TO-220FP Unit

Rthj-case Thermal Resistance Junction-case Max 0.89 4.2 °C/W

Rthj-pcb Thermal Resistance Junction-pcb Max (When

mounted on minimum Footprint) 60 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

TlMaximum Lead Temperature For Soldering

Purpose 300 °C

Symbol Parameter Max Value Unit

IAR Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tjmax) 5.8 A

EAS Single Pulse Avalanche Energy

(starting Tj= 25 °C, ID=I

AR,V

DD =50V) 300 mJ

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BVGSO Gate-Source Breakdown

Voltage Igs=± 1mA (Open Drain) 30 V

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STP6NK90Z - STP6NK90ZFP - STB6NK90Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source

Breakdown Voltage ID= 1mA, VGS = 0 900 V

IDSS Zero Gate Voltage

Drain Current (VGS =0) V

DS = Max Rating

VDS = Max Rating, TC= 125 °C 1

50 µA

µA

IGSS Gate-body Leakage

Current (VDS =0) V

GS = ± 20V ±10 µA

VGS(th) Gate Threshold Voltage VDS =V

GS,I

D= 100µA 3 3.75 4.5 V

RDS(on) Static Drain-source On

Resistance VGS =10V,I

D= 2.9 A 1.75 2 Ω

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (1) Forward Transconductance VDS =15V,ID=2.9A 5 S

iss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS =25V,f=1MHz,V

GS = 0 1350

130

Coss eq. (3) Equivalent Output

Capacitance VGS =0V,V

DS = 0V to 720V 70 pF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on)

trTurn-on Delay Time

Rise Time VDD =450V,I

D=3A

G= 4.7Ω,VGS =10V

(Resistive Load see, Figure 3)

20 ns

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =720V,I

D= 5.8 A,

VGS =10V 46.5

8.5

Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(off)

tfTurn-off Delay Time

Fall Time VDD = 450 V, ID=3A

G=4.7Ω,V

GS =10V

(Resistive Load see, Figure 3)

20 ns

tr(Voff)

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 720V, ID= 5.8 A,

RG=4.7Ω , VGS =10V

(Inductive Load see, Figure 5)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

ISD

ISDM (2) Source-drain Current

Source-drain Current (pulsed) 5.8

23.2 A

VSD (1) Forward On Voltage ISD = 5.8 A, VGS =0 1.6 V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 5.8 A, di/dt = 100A/µs

VDD =36V,T

j= 150°C

(see test circuit, Figure 5)

840

5880

STP6NK90Z - STP6NK90ZFP - STB6NK90Z

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Thermal Impedance For TO-220/D2PAK

Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D2PAK

Transfer Characteristics

Output Characteristics

Thermal Impedance For TO-220FP

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STP6NK90Z - STP6NK90ZFP - STB6NK90Z

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.

Capacitance VariationsGate Charge vs Gate-source Voltage

Static Drain-source On ResistanceTransconductance

STP6NK90Z - STP6NK90ZFP - STB6NK90Z

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Maximum Avalanche Energy vs Temperature

Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature

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STP6NK90Z - STP6NK90ZFP - STB6NK90Z

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

STP6NK90Z - STP6NK90ZFP - STB6NK90Z

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DIM. mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181

C 1.23 1.32 0.048 0.051

D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.067

F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106

H2 10.0 10.40 0.393 0.409

L2 16.4 0.645

L4 13.0 14.0 0.511 0.551

L5 2.65 2.95 0.104 0.116

L6 15.25 15.75 0.600 0.620

L7 6.2 6.6 0.244 0.260

L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

Dia.

TO-220 MECHANICAL DATA

P011C

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STP6NK90Z - STP6NK90ZFP - STB6NK90Z

123

DIM. mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039

F1 1.15 1.5 0.045 0.067

F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 0.630

L3 28.6 30.6 1.126 1.204

L4 9.8 10.6 .0385 0.417

L5 2.9 3.6 0.114 0.141

L6 15.9 16.4 0.626 0.645

L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

TO-220FP MECHANICAL DATA

STP6NK90Z - STP6NK90ZFP - STB6NK90Z

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DIM. mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393

E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625

L2 1.27 1.4 0.050 0.055

L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126

R 0.4 0.015

V2 0º 4º

D2PAK MECHANICAL DATA

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STP6NK90Z - STP6NK90ZFP - STB6NK90Z

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

D2PAK FOOTPRINT

* on sales type

DIM. mm inch

MIN. MAX. MIN. MAX.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0795

G 24.4 26.4 0.960 1.039

N 100 3.937

T 30.4 1.197

BASE QTY BULK QTY

1000 1000

REEL MECHANICAL DATA

DIM. mm inch

MIN. MAX. MIN. MAX.

A0 10.5 10.7 0.413 0.421

B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F11.4 11.6 0.449 0.456

K0 4.8 5.0 0.189 0.197

P0 3.9 4.1 0.153 0.161

P1 11.9 12.1 0.468 0.476

P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

TAPE MECHANICAL DATA

STP6NK90Z - STP6NK90ZFP - STB6NK90Z

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