KSA733CYTA - Fairchild Semiconductor

KSA733

PNP Epitaxial Si licon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Electrical Characteristics Ta=25°C unless otherwise noted

hFE Classification

Symbol Parameter Ratings Units

VCBO Collector-Base Voltage -60 V

VCEO Collector-Emitter Voltage -50 V

VEBO Emitter-Base Voltage -5 V

ICCollector Current -150 mA

PCCollector Power Dissipation 250 mW

TJ Junction Temperature 150 °C

TSTG Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCBO Collect or-B ase Break down Voltage IC= -100µA, IE=0 -60 V

BVCEO Collect or-E mitter Break down Voltage IC= -10mA. IB=0 -50 V

BVEBO Emitter-Base Breakdown Voltage IE = -10µA. IC=0 - 5 V

ICBO Collector Cut-off Current VCB= --60V, IE=0 -100 nA

IEBO Emitter Cut-off Current VEB= -5V, IC=0 -100 nA

hFE DC Current Gain VCE= -6V, IC= -1mA 40 700

VCE (sat) Collector-Emitter Saturat ion Voltage IC= -100mA, IB= -10mA -0.18 -0.3 V

VBE (on) B ase-E mitter On Voltage VCE= -6V, IC= -1mA -0.50 -0.62 -0.80 V

fT Current Gain Bandwidth Product VCE= -6V, IC= -10mA 50 180 MHz

Cob Output Capacitance VCB= -10V, IE = 0, f=1MHz 2.8 pF

NF Noise Figure VCE= -6V, IC= -0.3mA

f=1MHz, Rs=10kΩ6.0 20 dB

Classification R O Y G L

hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700

KSA733

Low Frequency Amplifier

• Collector-Base Voltage : VCBO= -60V

• Complement to KSC945

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1. Emitter 2. Base 3. Collector

TO-92

KSA733

Rev. A2, September 2002

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Vo ltage

Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20

-5

-10

-15

-20

-25

-30

-35

-40

-45

-50

IB = -400µA

IB = -350µA

IB = -300µA

IB = -200µA

IB = -150µA

IB = -100µA

IB = -250µA

IB = -50µA

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLT AGE

-0.1 -1 -10 -100

100

1000

VCE = -6V

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

-1 -10 -100 -1000

-0.01

-0.1

-1

-10

IC = 10 IB

VCE(sat)

VBE(sat)

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

IC[mA], COLLECTOR CURRENT

0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

-0.1

-1

-10

-100

VCE = -6V

IC[mA], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

-1 -10 -100

IE = 0

f = 1MH z

Cob [pF], CAPACITANCE

VCB [V], COLLECTOR-BASE VOLTAGE

-1 -10

100

1000

VCE = -6V

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

IC[mA], COLLECTOR CURRENT

0.46 ±0.10

1.27TYP

(R2.29)

3.86MAX

[1.27 ±0.20]1.27TYP

[1.27 ±0.20]

3.60 ±0.20

14.47 ±0.40

1.02 ±0.10

(0.25) 4.58 ±0.20

4.58 +0.25

–0.15

0.38 +0.10

–0.05

0.38 +0.10

–0.05

TO-92

Package Dimensions

KSA733

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devic es or syst em s

which, (a) ar e intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Prod uct St atu s Definition

Advance Information Form a tive or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

FACT™

FACT Quiet series™

FAST®

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

I2C™

ImpliedDisconnect™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC®

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerTrench®

QFET™

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

SILENT SWITCHER®

SMART START™

SPM™

Stealth™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

TruTranslation™

UHC™

UltraFET®

VCX™

ACEx™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E2CMOS™

EnSigna™

Across the board. Around the world.™

The Power Franchise™

Programmab le Acti ve Droo p™