Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-resistance BVDSS -40V
▼ Simple Drive Requirement RDS(ON) 12.5mΩ
▼ Fast Switching Characteristic ID-51A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance Junction-case 2.3 ℃/W
Rthj-a 40 ℃/W
Data and specifications subject to change without notice
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Total Power Dissipation
Continuous Drain Current, VGS @ 10V -32
Pulsed Drain Current1-200
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
AP9560GS-HF
Rating
Halogen-Free Product
-40
201108231
1
+20
-51
-55 to 150
54.3
3.13
Parameter
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
-55 to 150
Thermal Data
G
D
S
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
GDSTO-263(S)
AP9560GS-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -40 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-30A - - 12.5 mΩ
VGS=-4.5V, ID=-20A - - 16 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-30A - 64 - S
IDSS Drain-Source Leakage Current VDS=-32V, VGS=0V - - -10 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
QgTotal Gate Charge ID=-30A - 42 67 nC
Qgs Gate-Source Charge VDS=-32V - 6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 24 - nC
td(on) Turn-on Delay Time VDS=-20V - 10 - ns
trRise Time ID=-30A - 56 - ns
td(off) Turn-off Delay Time RG=0.5Ω-41-ns
tfFall Time VGS=-10V - 17 - ns
Ciss Input Capacitance VGS=0V - 3420 5470 pF
Coss Output Capacitance VDS=-25V - 375 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 350 - pF
RgGate Resistance f=1.0MHz - 2.1 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-30A, VGS=0V - - -1.2 V
trr Reverse Recovery Time IS=-10A, VGS=0V, - 30 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 26 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
3.Surface mounted on 1 in2 copper pad of FR4 board
AP9560GS-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
40
80
120
160
200
0 4 8 12 16
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25oC -10V
-7.0 V
-6.0 V
-5.0 V
VG= -4.0 V
0
40
80
120
160
024681012
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
-10V
-7.0V
-6.0V
-5.0V
VG= -4.0 V
TC= 150 oC
8
10
12
14
16
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID= -20A
TC=25
℃
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D= -30A
VG= -10V
0.4
0.6
0.8
1
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
0
10
20
30
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oC
Tj=150 oC
AP9560GS-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Maximum Continuous Drain Fig 12. Gate Charge Waveform
Current v.s. Case Temperature
4
Q
VG
-4.5V
QGS QGD
QG
Charge
0
2
4
6
8
10
0 20406080
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
VDS =-32V
ID=-30A
0
1000
2000
3000
4000
5000
1 5 9 13 17 21 25 29
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
1
10
100
1000
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
DC 0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
Operation in this area
limited by RDS(ON)
0
10
20
30
40
50
60
25 50 75 100 125 150
TC , Case Temperature ( oC )
-ID , Drain Current (A)
