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K4H561638N datasheet DDR SDRAM
Rev. 1.01
K4H560838N
K4H560438N
12. DDR SDRAM Spec Items & Test Conditions
13. Input/Output Capacitance ( TA= 25°C, f=100MHz)
NOTE :
1.These values are guaranteed by design and are tested on a sample basis only.
2. Although DM is an input -only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins.
This is required to match signal propagation times of DQ, DQS, and DM in the system.
3. Unused pins are tied to ground.
4. This parameteer is sampled. VDDQ = +2.5V +0.2V, VDD = +2.5V+0.2V. For all devices, f=100MHz, tA=25°C, VOUT(DC) = VDDQ/2,
VOUT(peak to peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading (to facilitate trace matching at the board level).
Conditions Symbol
Operating current - One bank Active-Precharge;
tRC=tRCmin; tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
DQ,DM and DQS inputs changing once per clock cycle;
address and control inputs changing once every two clock cycles.
IDD0
Operating current - One bank operation ; One bank open, BL=4, Reads
- Refer to the following page for detailed test condition IDD1
Precharge power-down standby current; All banks idle; power - down mode;
CKE = <VIL(max); tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
VIN = VREF for DQ,DQS and DM.
IDD2P
Precharge Floating standby current; CS > =VIH(min);All banks idle; CKE > = VIH(min); tCK=10ns for DDR200,tCK=7.5ns for
DDR266, 6ns for DDR333, 5ns for DDR400; Address and other control inputs changing once per clock cycle; VIN = VREF for
DQ,DQS and DM
IDD2F
Precharge Quiet standby current; CS > = VIH(min); All banks idle;
CKE > = VIH(min); tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; Address and other control
inputs stable at >= VIH(min) or =<VIL(max); VIN = VREF for DQ ,DQS and DM
IDD2Q
Active power - down standby current ; one bank active; power-down mode;
CKE=< VIL (max); tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400;
Vin = Vref for DQ,DQS and DM
IDD3P
Active standby current; CS >= VIH(min); CKE>=VIH(min);
one bank active; tRC=tRASmax; tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; DQ, DQS and
DM inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle
IDD3N
Operating current - burst read; Burst length = 2; reads; continguous burst; One bank active; address and control inputs changing
once per clock cycle; CL=2 at tCK=10ns for DDR200, CL=2 at 7.5ns for DDR266, CL=2.5 at tCK=7.5ns for DDR266, tCK=6ns for
DDR333, CL=3 at tCK=5ns for DDR400; 50% of data changing on every transfer; lout = 0 m A
IDD4R
Operating current - burst write; Burst length = 2; writes; continuous burst;
One bank active address and control inputs changing once per clock cycle; CL=2 at tCK=10ns for DDR200, CL=2 at tCK=7.5ns
for DDR266, CL=2.5 at tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; DQ, DM and DQS inputs changing twice per
clock cycle, 50% of input data changing at every burst
IDD4W
Auto refresh current; tRC = tRFC(min) which is 8*tCK for DDR200 at tCK=10ns; 10*tCK for DDR266 at tCK=7.5ns; 12*tCK for
DDR333 at tCK=6ns, 14*tCK for DDR400 at tCK=5ns; distributed refresh IDD5
Self refresh current; CKE =< 0.2V; External clock on; tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for
DDR400. IDD6
Operating current - Four bank operation ; Four bank interleaving with BL=4
-Refer to the following page for detailed test condition IDD7A
Parameter Symbol Min Max DeltaCap(max) Unit NOTE
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)CIN1 23 0.5pF4
Input capacitance( CK, CK ) CIN2 2 3 0.25 pF 4
Data & DQS input/output capacitance COUT 45
0.5
pF 1,2,3,4
Input capacitance(DM for x4/8, UDM/LDM for x16) CIN3 4 5 pF 1,2,3,4