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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
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Is Now Part of
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2003 Fairchild Semiconductor Corporation Rev. A2, March 2003
FQP50N06
QFETTM
FQP50N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristi cs
Symbol Parameter FQP50N06 Units
VDSS Drain-Source Volt age 60 V
IDDrain Current - Continuous (TC = 25°C) 50 A
- Continuous (TC = 100°C) 35.4 A
IDM Drain Current - Pulsed (Note 1) 200 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 490 mJ
IAR Avalanche Current (Note 1) 50 A
EAR Repetitive Avalanche Energy (Note 1) 12 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
PDPower Dissipation (TC = 25°C) 120 W
- Derate above 25°C 0.8 W/°C
TJ, TSTG Operating and Storage Temperat ure Range -55 to +175 °C
TLMaximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 1.24 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
!"
!
!
!"
"
"
!"
!
!
!"
"
"
S
D
G
TO-220
FQP Series
GSD
Rev. A2, March 2003
FQP50N06
©2003 Fairchild Semiconductor Corporation
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temper ature
2. L = 230µH, IAS = 50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 50A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Sta rting TJ = 25°C
4. Pulse Test : Pu lse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA60 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA
VDS = 48 V, TC = 150°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 25 A -- 0.018 0.022 Ω
gFS Forward Transconductance VDS = 25 V, ID = 25 A -- 22 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1180 1540 pF
Coss Output Capacitance -- 440 580 pF
Crss Reverse Transfer Capacit ance -- 65 90 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 30 V, ID = 25 A,
RG = 25 Ω
-- 15 40 ns
trTurn-On Rise Time -- 105 220 ns
td(off) Turn-Off De l a y Time -- 60 130 n s
tfTurn-Off Fa ll Time -- 65 140 ns
QgTotal Gate Charge VDS = 48 V, ID = 50 A,
VGS = 10 V
-- 31 41 nC
Qgs Gate-Source Charge -- 8 -- nC
Qgd Gate-Drain Charge -- 13 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 50 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 200 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 50 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, I S = 50 A,
dIF / dt = 100 A/µs
-- 52 -- ns
Qrr Reverse Recovery Charge -- 75 -- nC
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A2, March 2003©2003 Fairchild Semiconductor Corporation
FQP50N06
0 5 10 15 20 25 30 35
0
2
4
6
8
10
12
VDS = 30V
VDS = 48V
※ N ote : I D = 50A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 100101
0
500
1000
1500
2000
2500
3000 Ciss = C gs + Cgd (C ds = shorted)
Coss = Cds + Cgd
Crss = C gd
※ Notes :
1. V GS = 0 V
2. f = 1 M Hz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
100
101
102
175℃※ No te s :
1. V GS = 0V
2. 2 5 0μs P ulse Test
25℃
IDR , Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0 50 100 150 200
0.00
0.01
0.02
0.03
0.04
0.05
VGS = 20V
VGS = 10V
※ Note : T J = 25℃
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
246810
100
101
102
175℃
25℃
-55℃
※ No te s :
1. V DS = 30V
2. 2 5 0μs P ulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
10-1 100101
100
101
102
VGS
T o p : 15 .0 V
10 .0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
B o ttom : 4 .5 V
※ No te :
1. 2 5 0μs P ulse Test
2. T C = 25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance C haracteristi cs Figure 6. Gate Charge Characteristics
Figu re 3. On-R esistance Variat ion vs.
Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Characteri st ic s
©2003 Fairchild Semiconductor Corporation Rev. A2, March 2003
FQP50N06
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
※ Notes :
1. Z θJC(t) = 1 .2 4 ℃/W M ax .
2. D u ty Fac tor , D=t1/t2
3. T JM - T C = P DM * ZθJC
(t)
s ingle pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Therm al R esponse
t1, Square W ave Pulse Duration [sec]
25 50 75 100 125 150 175
0
10
20
30
40
50
60
ID, Drain Current [A]
TC, Case Temperature [℃]
10-1 100101102
100
101
102
103
DC
10 ms
1 ms
100μs
Opera tion in This A re a
is Lim ited by R DS(on)
※ Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Sourc e Vol tag e [ V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
※ Note s :
1. VGS = 10 V
2. ID = 25 A
RDS(ON) , (Norm alized)
Drain-Source On-Resistance
TJ, Junction Tem perature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※
Notes :
1 . VGS = 0 V
2 . ID = 250 μA
BV DSS , (Norm alized)
D rain-S ource Breakdown V oltage
TJ, Junction Tem perature [oC]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figu re 7. Breakdo w n Vol ta ge Variation
vs. Temperature Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Tr ans ient Ther m al Res pons e Cur ve
t1
PDM
t2
Rev. A2, March 2003©2003 Fairchild Semiconductor Corporation
FQP50N06
Gate Charge Test Circuit & W aveform
Resist iv e Sw itc h ing Tes t Ci rcuit & Wavefor m s
Unclamped Inductive Switching Test Circuit & Waveforms
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
©2003 Fairchild Semiconductor Corporation Rev. A2, March 2003
FQP50N06
Peak Diode Recovery dv/dt Tes t Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD con trolled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD con trolled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
Rev. A2, March 2003©2003 Fairchild Semiconductor Corporation
FQP50N06
Package Dimensions
4.50 ±0.20
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10 2.40 ±0.20
10.00 ±0.20
1.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80 ±0.1015.90 ±0.20
10.08 ±0.30 18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20 ±0.2013.08 ±0.20
1.30 ±0.10
1.30 +0.10
–0.05
0.50 +0.10
–0.05
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
TO-220
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY A NY LICENSE UNDER ITS PATENT RIGHTS, N OR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a lif e support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all su ch trademarks .
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MicroPak™
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MSX™
MSXPro™
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POP™
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QT Optoelectronics™
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RapidConnect™
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SMART START™
SPM™
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