Product Data Sheet
November 15, 2006
Wideband Dual Stage VPIN Limiter TGL2201
Key Features
• 3-25 GHz Passive, High Isolation Limiter
• Low Loss < 0.5 dB , X-band
• Good Return Loss > 15 dB
• Flat Leakage < 18 dBm
• Input Power CW Survivability > 5W
• Integrated DC Block on both input and output
• Chip Dimensions: 1.1 x 1.1 x 0.1 mm
Primary Applications
• Military Radar
• LNA Receiver Chain Protection
Fixtured Measured Performance
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
Insertion Loss (dB)
-24
-21
-18
-15
-12
-9
-6
-3
0
Return Loss (dB)
0 3 6 9 12 15 18 21 24 27 30
Frequency (GHz)
8
10
12
14
16
18
20
22
24
26
Output Power (dBm)
Data taken @ 10 GHz
9 12 15 18 21 24 27 30 33 36
Input Power (dBm)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1
Product Data Sheet
November 15, 2006
TGL2201
TABLE I
MAXIMUM RATINGS
Symbol Parameter 1/ Value
PIN Input Continuous Wave Power 37 dBm
TM Mounting Temperature
(30 Seconds)
320 0C
TSTG Storage Temperature -65 to 150 0C
1 / These ratings represent the maximum operable
values for this device
TABLE II
DC CHARACTERISTICS
(TA = 25 �C)
Symbol Parameter Limit Units
Min Max
FWD_RES (D1, D2, D3, D4) Resistance Forward 1.9 3.9 Ohm
VREV(D1,D4) Reverse Voltage -60 -30 V
TABLE III
RF CHARACTERISTICS
(TA = 25 �C)
Symbol Parameter Test Condition Limit Units
Min Typ Max
IL Insertion Loss F = 4-20 GHz -- 0.5 1.0 dB
IRL Input Return Loss F = 4-20 GHz 12 -- -- dB
ORL Output Return
Loss
F = 4-20 GHz 12 -- -- dB
PWR Output Power @
Pin = 27 dBm
F = 6.0 GHz
F = 16.0 GHz
--
--
--
--
20
20
dBm
dBm
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2
Product Data Sheet
November 15, 2006
TGL2201
High Isolation Limiter Assembly
RF Out RF In
DC Schematic
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
November 15, 2006
TGL2201
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4
Product Data Sheet
November 15, 2006
TGL2201
Assembly Process Notes
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
