CDIL CMBTA13 CMBTA14 N-P-N SMALL-SIGNAL DARLINGTON TRANSISTORS N-P-N transistors Marking PACKAGE OUTLINE DETAILS CMBTA13 = 1M ALL DIMENSIONS IN mm CMBTAI4 = 1N 3.0 2.8 0.48 0.14 , 10.38 al 0.09 tls 0.70 | 0.50 Pin configuration 2.6 LL 1.4 2.4 1.2 i = BASE RO.1 | 2 = EMITTER Coo 4.7 = L . 3 = COLLECTOR 1 2 | 80.05 .002 | 1.02 | 0.12 || ) 0.89 0.02 0.60 2.00 L115] a 0-40 1.80 TR2 2 ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage (open base) VBE = 0 VcES max. 30 V Collector current (d.c.) Ic max. 300 mA Total power dissipation up to Tamb = 25C Ptot max. 250 mW Junction temperature Tj max. 150 C D.C. current gain CMBTAL3 h . 5000 = . =5 FE man. Ic = 10 mA; VcE=5V CMBTA14 hr min. 10000 Transition frequency at f = 100 MHz Ic = 10 mA; VcgE=5 V fr min. 125 MHz 143CDIL CMBTA13 CMBTA14 RATINGS (at Ta = 25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) VBE = 0 VcBO max. 30 V Collector-emitter voltage (open base) VBE =0 . VCES max. 30 V Emitter~base voltage (open collector) VEBO max. 10 V Collector current (d.c.) Ic max. 300 mA Total power dissipation up to Tamb = 25C Prot max. 250 mW Storage temperature Tstg -55 to +150 C Junction temperature Tj max. 150 C THERMAL RESISTANCE from junction to ambient Rth j-a 500 K/W CHARACTERISTICS (at Ta = 25C unless otherwise specified) Collector-emitter breakdown voltage Ic = 100 pA V(BR)CES min. 30 V Emitter-base cut-off current VBE =10V IEBO max. 0.1 pA Collector-base cut-off current Vcp = 30 V ICBO max. 0.1 pA D.C. current gain CMBTAI3 h . 5000 Ic = 10 mA; VcE =5V CMBTA14 hg min. 10000 CMBTA13 hrfg min. 10000 Ic = 100 mA; Veg = 5 V CMBTA14 hrg min. 20000 Collector-emitter saturation voltage IC = 100 mA; Ip = 0.1 mA VCEsat max. 15 V Baseemitter On voltage Ic = 100 mA; VcE =5 V; VBE(on) max. 2V Transition frequency at f = 100 MHz Ic = 10 mA; VcE =5 V fr min. 125 MHz 144