NTE461
Silicon N−Channel JFET Transistor
Dual, Matched Pair
DC Amp/Sampler/Chopper
Features:
DHigh Input Impedance: IG < 50pA
DMinimum System Error and Calibrations
DTO−71 Case Style
Absolute Maximum Ratings:
Gate Drain or Gate Source Voltage −50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Device Dissipation (TA = +25°C, Each Side) 250mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 1.67mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = +25°C) 400mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 2.67mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range −65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16” from case for 30sec) +300°C. . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C, unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Gate−Source Breakdown Voltage V(BR)GSS IG = −1µA, VDS = 0 −50 − − V
Gate Reverse Current IGSS VGS = −30V, VDS = 0 − − −100 pA
Gate−Source Cutoff Voltage VGS(off) VDG = 15V, ID = 0.5nA −0.5 − −4.5 V
Saturation Drain Current IDSS VDS = 15V, VGS = 0 0.5 −8.0 mA
Gate Operating Current IGVDG = 15V, ID = 200µA− − −50 pA
Dynamic Characteristics
Forward Transcondutance gfs g = 1kHz 1500 −6000 µmhos
Input Capacitance Ciss VDS = 15V, VGS = 0 −−6pF
Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0 −−2pF
Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Matching Characteristics
Differential Gate Current IG1−IG2 VDG = 15V, ID = 200µA, TA = +25°C−−5nA
Saturation Drain Current Ratio IDSS1/IDSS2 VDS = 15V, VGS = 0, Note 1 0.95 −1.0
Differential Gate−Source Voltage VGS1−VGS2 VGD = 15V ID = 50µA− − 15 mV
ID = 200µA− − 15 mV
Gate−Source Voltage
Differential Drift
VDG = 15V,
ID = 200µA
TA = +25°C/TB = +125°C− − 40 µV/°C
Diff
eren
ti
a
l D
r
ift
I
D
=
200
µ
A
,
Note 2 TA = −55°C/TB = +25°C− − 40 µV/°C
Transconductance Ratio gfs1/gfs2 0.95 −1.0
Differential Output Conductance gos1−gos2 −−3µmhos
Note 1. Assumes smaller value in numerator.
Note 2. Measured at end points, TA and TB.
Pin4 and Pin8 are Omitted
All Leads are Isolated from Case
Pin 1 S1
Pin 2 D1
Pin 3 G1
Pin 5 S2
Pin 6 D2
Pin 7 G2
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.018 (0.45) Dia
.190
(4.82)
.500
(12.7)
Min
.100 (2.54) Dia
.050 (1.27)
.038 (0.96)
.041 (1.04)
45°
1
23
5
6
7