74LVC125ADB@118 - NXP SEMICONDUCTORS

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DATA SH EET

Product data sheet

Supersedes data of 2002 Feb 18

2004 Mar 22

DISCRETE SEMICONDUCTORS

PDZ-B series

Voltage regulator diodes

2004 Mar 22 2

NXP Semiconductors Product data sheet

Voltage regulator diodes PDZ-B series

FEATURES

•Total power dissipation: max. 400 mW

•Small plastic package suitable for surface mounted

design

•Wide variety of voltage ranges: nominal 2.4 to 36 V

(E24 range)

•Tolerance approximately ±2%.

APPLICATIONS

•General voltage regulation.

DESCRIPTION

Low-power gen eral purpose voltage regulator diodes in a

small plastic SMD SOD323 (SC -76) package.

PINNING

PIN DESCRIPTION

1cathode

2anode

Fig.1 Simplified outline (SOD323; SC-76) and

symbol.

handbook, halfpage

;

Top view

MAM387

The marking bar indicates the cathode.

MARKING

ORDERING INFORMATION

TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE

PDZ2.4B Z0 PDZ5.1B Z8 PDZ11B ZG PDZ24B ZQ

PDZ2.7B Z1 PDZ5.6B Z9 PDZ12B ZH PDZ27B ZR

PDZ3.0B Z2 PDZ6.2B ZA PDZ13B ZJ PDZ30B ZS

PDZ3.3B Z3 PDZ6.8B ZB PDZ15B ZK PDZ33B ZT

PDZ3.6B Z4 PDZ7.5B ZC PDZ16B ZL PDZ36B ZU

PDZ3.9B Z5 PDZ8.2B ZD PDZ18B ZM

PDZ4.3B Z6 PDZ9.1B ZE PDZ20B ZN

PDZ4.7B Z7 PDZ10B ZF PDZ22B ZP

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

PDZ2.4B to

PDZ36B −plastic surface mounted package; 2 leads SOD323

2004 Mar 22 3

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes PDZ-B series

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).

Note

1. Device mounted o n a printed-circuit board me asuring 11 × 25 × 1.6 mm.

THERMAL CHARACTE RISTICS

Note

1. Device mounted o n a printed-circuit board me asuring 11 × 25 × 1.6 mm.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −200 mA

IZSM non-repetitive peak re verse current tp = 100 μs; square wave;

Tamb = 25 °C prior to surge see Table 2

Ptot total power dissipation Tamb = 25 °C; note 1;

see Fig.2 −400 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-s) thermal resistance from junction to soldering point 130 K/W

Rth(j-a) thermal resistance from junction to ambient note 1 340 K/W

2004 Mar 22 4

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes PDZ-B series

CHARACTERISTICS

Table 1 Total series

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF = 10 mA; see Fig.3 0.9 V

IF = 100 mA; see Fig.3 1.1 V

IRreverse current

PDZ2.4B VR = 1 V 50 μA

PDZ2.7B VR = 1 V 20 μA

PDZ3.0B VR = 1 V 10 μA

PDZ3.3B VR = 1 V 5 μA

PDZ3.6B VR = 1 V 5 μA

PDZ3.9B VR = 1 V 3 μA

PDZ4.3B VR = 1 V 3 μA

PDZ4.7B VR = 1 V 2 μA

PDZ5.1B VR = 1.5 V 2 μA

PDZ5.6B VR = 2.5 V 1 μA

PDZ6.2B VR = 3 V 500 nA

PDZ6.8B VR = 3.5 V 500 nA

PDZ7.5B VR = 4 V 500 nA

PDZ8.2B VR = 5 V 500 nA

PDZ9.1B VR = 6 V 500 nA

PDZ10B VR = 7 V 100 nA

PDZ11B VR = 8 V 100 nA

PDZ12B VR = 9 V 100 nA

PDZ13B VR = 10 V 100 nA

PDZ15B VR = 11 V 50 nA

PDZ16B VR = 12 V 50 nA

PDZ18B VR = 13 V 50 nA

PDZ20B VR = 15 V 50 nA

PDZ22B VR = 17 V 50 nA

PDZ24B VR = 19 V 50 nA

PDZ27B VR = 21 V 50 nA

PDZ30B VR = 23 V 50 nA

PDZ33B VR = 25 V 50 nA

PDZ36B VR = 27 V 50 nA

2004 Mar 22 5

NXP Semiconductors Product data sheet

Voltage regulator diodes PDZ-B series

Table 2 Per type

Tj = 25 °C unless otherwise specified.

TYPE

NUMBER

WORKING VOLTAGE

VZ (V)

at IZ = 5 mA

DIFFERENTIAL RESISTANCE

rdif (Ω)

TEMP. COEFF.

SZ (mV/K)

at IZ = 5 mA

(see Figs 4 and 5)

DIODE CAP.

Cd (pF) at

f = 1 MHz;

VR = 0

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A) at tp = 100 μs;

Tamb = 25 °C

MIN. MAX. MAX. at IZ

(mA) MAX. at IZ

(mA) TYP. MAX. MAX.

PDZ2.4B 2.43 2.63 1 000 0.5 100 5−1.6 450 8.0

PDZ2.7B 2.69 2.91 1 000 0.5 100 5−2.0 440 8.0

PDZ3.0B 2.85 3.07 1 000 0.5 95 5−2.1 425 8.0

PDZ3.3B 3.32 3.53 1 000 0.5 95 5−2.4 410 8.0

PDZ3.6B 3.60 3.85 500 1.0 90 5−2.4 390 8.0

PDZ3.9B 3.89 4.16 500 1.0 90 5−2.5 370 8.0

PDZ4.3B 4.17 4.48 600 1.0 90 5−2.5 350 8.0

PDZ4.7B 4.55 4.75 600 1.0 90 5−1.4 325 8.0

PDZ5.1B 4.96 5.20 250 0.5 60 50.3 300 5.5

PDZ5.6B 5.48 5.73 100 0.5 50 51.9 275 5.5

PDZ6.2B 6.06 6.33 80 0.5 50 52.7 250 5.5

PDZ6.8B 6.65 6.93 60 0.5 40 53.4 215 5.5

PDZ7.5B 7.28 7.60 60 0.5 10 54.0 170 3.5

PDZ8.2B 8.02 8.36 60 0.5 10 54.6 150 3.5

PDZ9.1B 8.85 9.23 60 0.5 10 55.5 120 3.5

PDZ10B 9.77 10.21 60 0.5 10 56.4 110 3.5

PDZ11B 10.78 11.22 60 0.5 10 57.4 108 3.0

PDZ12B 11.74 12.24 80 0.5 10 58.4 105 3.0

PDZ13B 12.91 13.49 80 0.5 10 59.4 103 2.5

PDZ15B 14.34 14.98 80 0.5 15 511.4 99 2.0

PDZ16B 15.85 16.51 80 0.5 20 512.4 97 1.5

PDZ18B 17.56 18.35 80 0.5 20 514.4 93 1.5

PDZ20B 19.52 20.39 100 0.5 20 516.4 88 1.5

PDZ22B 21.54 22.47 100 0.5 25 518.4 84 1.3

PDZ24B 23.72 24.78 120 0.5 30 520.4 80 1.3

PDZ27B 26.19 27.53 150 0.5 40 523.4 73 1.0

PDZ30B 29.19 30.69 200 0.5 40 526.6 66 1.0

PDZ33B 32.15 33.79 250 0.5 40 529.7 60 0.9

PDZ36B 35.07 36.87 300 0.5 60 533.0 59 0.8

2004 Mar 22 6

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes PDZ-B series

GRAPHICAL DATA

Fig.2 Power derating curve.

handbook, halfpage

0 50 100 200

Tamb (°C)

Ptot

(mW)

500

400

300

100

200

150

MBK245

Tj = 25 °C.

Fig.3 Forward current as a function of forward

voltage; typical values.

handbook, halfpage

0.6 1

300

100

200

MBG781

0.8 VF (V)

(mA)

Fig.4 Temperature coefficient as a functi on of

working current; typical values.

PDZ2.4B to PDZ4.3B.

Tj = 25 °C to 150 °C.

handbook, halfpage

060

−2

−3

−1

MGL273

20 40 IZ (mA)

(mV/K) 4.3

3.9

3.6

3.3 3.0

2.4

2.7

Fig.5 Temperature coefficient as a functi on of

working current; typical values.

PDZ4.7 B to PDZ12B.

Tj = 25 °C to 150 °C.

handbook, halfpage

02016

−5

MGL274

4812 IZ (mA)

(mV/K)

4.7

9.1

8.2

7.5

6.8 6.2

5.6

5.1

2004 Mar 22 7

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes PDZ-B series

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD323 SC-76

SOD32

03-12-17

06-03-16

Note

1. The marking bar indicates the cathode

UNIT A

mm 0.05

1.1

0.8 0.40

0.25 0.25

0.10 1.8

1.6 1.35

1.15 2.7

2.3 0.45

0.15

max

DIMENSIONS (mm are the original dimensions)

lastic surface-mounted package; 2 leads

(1)

2 mm

scale

bpc D E HDQ

0.25

0.15

Lpv

0.2

detail X

A1c

HDvA

2004 Mar 22 8

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes PDZ-B series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R76/05/pp9 Date of release: 2004 Mar 22 Document orde r number: 9397 750 12615