2SK322
Silicon N-Channel Junction FET
Application
HF wide band amplifier
Outline
1
2
3
1. Drain
2. Source
3. Gate
MPAK
2SK322
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Gate to drain voltage VGDO –15 V
Gate to source voltage VGSO –15 V
Drain current ID50 mA
Gate current IG5mA
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Gate to drain breakdown
voltage V(BR)GDO –15 — — V IG = –100 µA
Gate to source breakdown
voltage V(BR)GSO –15 — — V IG = –100 µA
Gate cutoff current IGSS — — –10 nA VGS = –7 V, VDS = 0
Drain current IDSS*15 — 50 mA VDS = 5 V, VGS = 0 (pulse)
Gate to source cutoff voltage VGS(off) — — –3.0 V VDS = 5 V, ID = 100 µA
Forward transfer admittance |yfs| 25 45 — mS VDS = 5 V, VGS = 0, f = 1 kHz
Note: 1. The 2SK322 is grouped by IDSS as follows.
Grade P Q R S T
Mark WP WQ WR WS WT
IDSS 5 to 16 14 to 24 20 to 32 28 to 42 36 to 50
2SK322
3
15010050
Ambient Temperature Ta (°C)
0
150
100
50
Maximum Channel Power Dissipation
Curve
Channel Power Dissipation Pch (mW)
642
Drain to Source Voltage VDS (V)
0
30
20
10
Typical Output Characteristics
Drain Current ID (mA)
VDS = 5 V
V
GS
= 0 V
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
–0.8
0–2.0 –1.2 –0.8 –0.4–1.6
Gate to Source Voltage VGS (V)
0
30
20
10
Typical Transfer Characteristics
Drain Current ID (mA)
VDS = 5 V
0–2.0 –1.2 –0.8 –0.4–1.6
Gate to Source Voltage VGS (V)
0
60
40
30
50
20
10
Forward Transfer Admittance vs.
Gate to Source Voltage
VDS = 5 V
f = 1 kHz
Forward Transfer Admittance yfs(mS)
2SK322
4
0–1.0 –0.6 –0.4 –0.2–0.8
Gate to Source Voltage VGS (V)
4
14
12
10
8
6
Input Capacitance vs. Gate to Source
Voltage
VDS = 5 V
f = 1 MHz
Input Capacitance Ciss (pF)
1 10010 1 k 10 k
Signal Source Resistance Rg (Ω)
0.2
20
5
2
1.0
0.5
10
Noise Voltage Referred to Input vs.
Signal Source Resistance
VDS = 5 V
ID = 5 mA
Ta =25°C
Noise Voltage Referred to Input
en (nV/ Hz)
√
f = 120 Hz
f = 100 kHz
4 KTRg
10 1 k100 10 k 100 k
Frequency f (Hz)
0.5
20
50
5
2
1.0
10
Noise Voltage Referred to Input vs.
Frequency
VDS = 5 V
Rg = 0
Noise Voltage Referred to Input
en (nV/ Hz)
√
5 mA
10 mA
ID = 2 mA
0.16
0 – 0.1
+ 0.10
– 0.06
3 – 0.4+ 0.10
– 0.05
0.95 0.95
1.9 ± 0.2
2.95 ± 0.2
2.8 + 0.2
– 0.6
0.65
1.5 ± 0.15
0.65
1.1+ 0.2
– 0.1
0.3
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
MPAK
—
Conforms
0.011 g
Unit: mm
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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