2N4854 Complementary Dual Small-Signal Transistor CRYSTALONCS 2805 Veterans Highway Suite 4 Ronkonkoma, N.Y. 11779 CASE 654-07, STYLE 5 (T0-78) MAXIMUM RATINGS Rating Symbol Vatue Unit Collector-Emitter Voltage YCEO 40 Vde Collector-Base Voltage VoBO 60 Vde Collector 1 to Coltactor 2 Voltage Vorc2 120 Vde Emitter-Base Voltage VEBO 5.0 Vde Collector Current Continuous ig 600 mAdc One Die Both Die Device Dissipation Pr @Ta-2sC 0.3 06 Watts Derate above 25C 4 oe mw 7 20 Watts @ 1c = 25C 5.74 11.43 wea Derate above 25C m Junction Temperature Ty 200 C Storage Temperature Range Tstg ~65 to 200 CcELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic | symboi | Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage!) ViBR)CEO 40 _ Voc {Ig = 10 mAdc) Collector-Base Breakdown Votlage ViBR}CBO 60 = Vdc {I = 10 pAde) Emitter-Base Breakdown Voltage ViBRIEBO 5.0 a Vee (I = 10 pAde) Collector Cute Current IcBo (Vop = 50 Vdc) a 10 nAde (Vcp = 50 Vdc, Ta = 150C) _ 10 pAdc Eminer Cutoff Current 'Eso a 10 nAde (Veg = 3.0 Vac} ON CHARACTERISTICS OC Current Gain bre - {Ic = 150 MAde, Voce = 1.0 Vde)(1) 50 (Ig = 100 pAde, Voge = 10 Vde) 35 - (ig = 1.0 mAdc, Vog = 10 Vdc) ae > (ig = 10 mAde, Veg = 10 Vde)(1) 75 - (ic = 150 mAde, Vcg = 10 Vade)(1) 100 300 (ig = 300 mAde, VoE = 10 Vae)(1) KS) _ (ig = 19 mAde, VCE = 10 Vde. Ta = ~55C) 2 - Coltector-Emitter Saturation Voltage! !) VCE\sat) _ O4 Voc (tg = 150 mad, Ig = 15 mAdc} Base-Emitter Saturation Veltaga(!) VBE(sat) 0.8 1.25 Vee (ic = 150 mAde, |p = 15 mAdc) Collector-Emitter Voltage (Non jatching) VoEO 40 - Vode SMALL-SIGNAL CHARACTERISTICS Current Transter Aatio hte 60 300 a (lc = 1.0 mAde, Veg = 10 Vado, f = 1.0 KHz} input Impedance hie 15 9.0 kohms (Ig = 1.0 mAdc, Vog = 10 Vide. f = 1.0 kHz) Output Admitiance hoe 50 umhos (ic = 1.0 mAdc, Vog = 10 Vac, f = 1.0 kHz) Small-Signai Current Transfer Ratio, Magnitude: (htel 2.0 8.0 - (Ic = 20 mAdc, VCE = 10 Vde, f = 100 MHz) Output Capacitance Cobo _ 8.0 pF (le = 0, Vog = 10 Vde, f= 0.1 to 1.0 MHz) Noise Figure Ne ad a0 a8 {Ig = 100 pAdc, VoE = 10 Vde, Rg = 1.0 kohm, f = 1.0 kHz} SWITCHING CHARACTERISTICS (See Figures 10, 21) Saturated Turn-On Time ] ton _ 45 ns Saturated Turn-O# Time ! lott a 300 ns Unsaturated Turn-On + Turn-Otf Time I ton + tot aa 18 ns 11) Pulsed. Pulse Width 250 to 350 xs, Duty Cycte 10 to 2.0%. ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 30 45C, Vcg = 30 Vde Py = 300 mW Each Die, 600 mW Total initiel and End Point Limits Characteristics Tested Symbol Min Max Unit Collector Cutoff Current Ica0 a 10 nAdc (Vog = $0 Vdc) DC Current Gain(') hre 100 300 = (ig = 150 mAde, VCE = 10 Vac)!1) Dette trom Pre-Burn-in Measured Values Min Max Delta Collector Cutoff Currant Alcpo a +100 % of initial Value or 35.0 ae whichever is greater Delta DC Current Gain(*) ANFE +5 % of initial Value (1) Pulsed. Pulse Width 250 to 350 ps. Duty Cycle 10 to 20%