SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC856 BC858 BC860 ISSUE 6 - APRIL 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC856A3A BC856 BC858C3L BC846 BC856BZ3B BC859AZ4A BC857 BC847 BC857AZ3E BC859B4B BC858 BC848 BC857B3F BC859CZ4C BC859 BC849 BC857C3G BC860AZ4E BC860 BC850 BC858A3J BC860B4F BC858B3K BC860C4GZ BC857 BC859 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BC856 BC857 VCBO VCES VCEO VEBO IC IEM IBM IEM Ptot Tj:Tstg -80 -80 -65 -50 -50 -45 Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range BC858 BC859 BC860 -30 -30 -30 -30 -30 -30 -5 -100 -200 -200 -200 330 -55 to +150 -50 -50 -45 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL Max Collector Cut-Off Current ICBO Max Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) Typ Max. Typ Max. Typ Max. VBE(sat) Typ BC856 BC857 BC858 BC859 BC860 -15 -4 -75 -75 -300 -300 VBE Min Typ Max Max -75 -75 -250 -250 -600 -600 -650 -650 -750 -750 -600 -650 -750 -820 UNIT CONDITIONS. nA VCB = -30V VCB = -30V A Tamb=150C mV IC=-10mA, IB=-0.5mA mV IC=-100mA, IB=-5mA mV IC=-10mA* mV -850 Typ Base-Emitter Voltage -75 -300 -250 -650 -300 -600 -700 mV -580 -580 -650 -650 -750 -750 UNIT V V V V mA mA mA mA mW C mV mV IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-2mA VCE=-5V IC=-10mA VCE=-5V * Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the operating point IC = 11mA, VCE = 1V at constant base current. BC856 BC858 BC860 BC857 BC859 ELECTRICAL CHARACTERISTICS (Continued) PARAMETER Noise Figure SYMBOL N Typ Max 2 10 2 10 2 10 1 4 Typ Max 1.2 4 Equivalent Noise Voltage en Max 110 Dynamic Group VI Characteristics hie Min Typ Max Min Typ Max Min Typ Max Min Typ Max Typ Typ Typ Typ Min Typ Max Min Typ Max Min Typ Max Min Typ Max Typ Max Typ Max Typ Max Typ Max 0.4 1.2 2.2 0.4 1.2 2.2 2.5 1.5 2 2.5 1.5 2 75 110 150 75 110 150 20 40 450 600 900 20 40 0.4 1.2 2.2 1.6 2.7 4.5 3.2 4.5 8.5 6 8.7 15 2.5 1.5 2 3 75 110 150 125 220 260 240 330 500 450 600 900 20 40 18 30 30 60 60 110 Group A Group B Group C Group VI Group A Group B Group C Group VI hre hfe Group A Group B Group C Group VI Group A Group B Group C hoe UNIT CONDITIONS. dB VCB = -5V, dB IC=-200A, RG=2k, f=1kHz, f=200Hz 1 dB VCB = -5V, 3 dB IC=-200A, RG=2k, f=30Hz to 15kHz at -3dB points 110 nV VCB = -5V, IC=-200A, RG=2k, f=10Hz to 50Hz at -3dB points k k k k k k k k k 6 k 8.7 k 15 k x10-4 1.5 x10-4 2 x10-4 3 x10-4 VCE=-5V Ic=-2mA f=1kHz BC856 BC857 BC858 BC859 BC860 6 8.7 15 1.5 2 3 450 600 900 60 110 1 4 450 600 900 s s s s s s 60 s 110 s BC856 BC858 BC860 BC857 BC859 ELECTRICAL CHARACTERISTICS (Continued) PARAMETER Static Group VI Forward Current Ratio Group A Group B Group C SYMBOL hFE Min Typ Max Typ hFE Min Typ Max Typ Typ hFE Min Typ Max Typ hFE Typ. Transition Frequency fT Min Typ Max Typ Typ Collector-Base Capacitance Cobo Typ BC856 BC857 BC858 BC859 BC860 UNIT CONDITIONS. IC=-2mA, VCE=-5V 200 270 75 110 150 90 125 180 250 120 150 220 290 475 200 270 270 270 420 500 800 150 420 500 800 400 150 420 500 800 300 420 500 800 IC=-100mA,VCE=-5V 300 MHz IC=-10mA,VCE=-5V f=100MHz VCB=-10V, pF f=1MHz 75 110 150 90 75 110 150 90 120 120 200 150 4.5 Spice parameter data is available upon request for these devices IC=-0.01mA,VCE=-5V IC=-2mA, VCE=-5V IC=-100mA,VCE=-5V IC=-0.01mA,VCE=-5V IC=-2mA, VCE=-5V IC=-100mA,VCE=-5V IC=-0.01mA, VCE=-5V IC=-2mA, VCE=-5V