FEATURES
Direct Replacement for SILICONIX U/SST440 & U/SST441
HIGH CMRR CMRR ≥ 85dB
LOW GATE LEAKAGE IGSS ≤ 1pA
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -65 to +150 °C
Operating Junction Temperature -55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation (Total) 500mW
Maximum Currents
Gate Current 50mA
Maximum Voltages
Gate to Drain -25V
Gate to Source -25V
Gate to Gate ±50V
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
U/SST440 10
GS2GS1 VV − Differential Gate to
Source Cutoff Voltage U/SST441 20
mV VDG = 10V, ID = 5mA
∆T
VV∆GS2GS1 −
Differential Gate to Source Cutoff
Voltage Change with Temperature 20 µV/°C
VDG = 10V, ID = 5mA
TA = -55 to +125°C
DSS2
DSS1
I
I Gate to Source Saturation Current Ratio 0.07 VDS = 10V, VGS = 0V
fs2
fs1
g
g Forward Transconductance Ratio2 0.97 VDS = 10V, ID = 5mA, f = 1kHz
CMRR Common Mode Rejection Ratio 85 dB VDG = 5 to 10V, ID = 5mA
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
BVGSS Gate to Source Breakdown Voltage -25 V IG = -1µA, VDS = 0V
VGS(off) Gate to Source Cutoff Voltage -1 -3.5 -6 V VDS = 10V, ID = 1nA
IDSS Gate to Source Saturation Current3 6 15 30 mA VDS = 10V, VGS = 0V
IGSS Gate Leakage Current -1 -500 VGS = -15V, VDS = 0V
IG Gate Operating Current -1 -500 pA VDG = 10V, ID = 5mA
SST SERIES
1
2
3
4
8
7
6
5
SOIC
S1
D1
G1
NC
NC
G2
D2
S2
U SERIES
5
BOTTOM VIEW
TO
-71
1
2
3
6
7
D1
G1
S1
S2
D2
G2
Linear Integrated System
s
U/SST440,441
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Integrated System
s
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Linear Integrated System
s
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
ELECTRICAL CHARACTERISTICS CONTINUED @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
gfs Forward Transconductance 4.5 6 9 mS
gos Output Conductance 70 200 µS
VDS = 10V, ID = 5mA, f = 1kHz
Ciss Input Capacitance 3
Crss Reverse Transfer Capacitance 1 pF VDS = 10V, ID = 5mA, f = 1MHz
en Equivalent Input Noise Voltage 4 nV/√Hz VDS = 10V, ID = 5mA, f = 10kHz
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%
3. Assumes smaller value in numerator.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio
otherwise under any patent or patent rights of Linear Integrated Systems.
n or
1
SOIC
2
3
45
6
7
8
DIMENSIONS IN
INCHES
0.2284
0.2440
0.189
0.196
0.0075
0.0098
0.021
0.014
0.018 0.05
0
0.0040
0.0098
0.150
0.157
TO-71
Six Lead
0.230
0.209 DIA.
DIA.
0.195
0.175 0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016 DIA.
6 LEADS
3
2
15
6
0.046
0.036
45°
0.048
0.028
0.100 0.050
7
