FEATURES
Direct Replacement for SILICONIX U/SST440 & U/SST441
HIGH CMRR CMRR ≥ 85dB
LOW GATE LEAKAGE IGSS ≤ 1pA
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -65 to +150 °C
Operating Junction Temperature -55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation (Total) 500mW
Maximum Currents
Gate Current 50mA
Maximum Voltages
Gate to Drain -25V
Gate to Source -25V
Gate to Gate ±50V
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
U/SST440 10
GS2GS1 VV − Differential Gate to
Source Cutoff Voltage U/SST441 20
mV VDG = 10V, ID = 5mA
∆T
VV∆GS2GS1 −
Differential Gate to Source Cutoff
Voltage Change with Temperature 20 µV/°C
VDG = 10V, ID = 5mA
TA = -55 to +125°C
DSS2
DSS1
I
I Gate to Source Saturation Current Ratio 0.07 VDS = 10V, VGS = 0V
fs2
fs1
g
g Forward Transconductance Ratio2 0.97 VDS = 10V, ID = 5mA, f = 1kHz
CMRR Common Mode Rejection Ratio 85 dB VDG = 5 to 10V, ID = 5mA
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
BVGSS Gate to Source Breakdown Voltage -25 V IG = -1µA, VDS = 0V
VGS(off) Gate to Source Cutoff Voltage -1 -3.5 -6 V VDS = 10V, ID = 1nA
IDSS Gate to Source Saturation Current3 6 15 30 mA VDS = 10V, VGS = 0V
IGSS Gate Leakage Current -1 -500 VGS = -15V, VDS = 0V
IG Gate Operating Current -1 -500 pA VDG = 10V, ID = 5mA
SST SERIES
1
2
3
4
8
7
6
5
SOIC
S1
D1
G1
NC
NC
G2
D2
S2
U SERIES
5
BOTTOM VIEW
-71
1
2
3
6
7
D1
G1
S1
S2
D2
G2
Linear Integrated System
U/SST440,441
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Integrated System
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261