T1G4005528-FS 55W, 28V, DC - 3.5GHz, GaN RF Power Transistor Applications * * * * * * Military radar Civilian radar Professional and military radio communications Test instrumentation Avionics Wideband or narrowband amplifiers Product Features * * * * * Functional Block Diagram Frequency Range: DC to 3.5 GHz Linear Gain: >15 dB at 3.5 GHz Operating Voltage: 28 V Output Power (P3dB): 55 W at 3.5 GHz Lead-free and RoHS compliant General Description Pin Configurations The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven 0.25um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Pin No. Symbol 1 2 Flange RF Output RF Input Source Ordering Information Part ECCN Description T1G4005528-FS EAR99 T1G4005528-FS-EVB1 EAR99 Datasheet: Rev E 02-21-13 (c) 2013 TriQuint - 1 of 12 - Packaged part: Flangeless 3.0-3.5 GHz Evaluation Board Disclaimer: Subject to change without notice www.triquint.com T1G4005528-FS 55W, 28V, DC - 3.5GHz, GaN RF Power Transistor Absolute Maximum Ratings Parameter Drain to Gate Voltage, Vd - Vg Gate Voltage, Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW, T = 25 C Value 40 V -8 to 0 V 9.6 A -20 to 33 mA 90 W 43 dBm Channel Temperature, Tch 275 C Mounting Temperature, (30 sec) 320 C Storage Temperature Notes: 1. Operation of this device outside the parameter ranges given may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Refer to the Median Life Time plot for additional information regarding channel temperature. -40 to 150 C DC Characteristics Recommended operating conditions apply unless otherwise specified: TA = 25 C Characteristics Symbol Min Typ BVDSX VGS (Q) VGS (th) IDSX 85 120 -3.5 -4.5 16 Break-Down Voltage Drain Source Gate Quiescent Voltage Gate Threshold Voltage Saturated Drain Current Max Unit V V V A Conditions VGS = -8 V, ID = 10 mA VDS = 28 V, IDQ = 0.8 A VDS = 10 V, ID = 40 mA VDS = 5 V, VGS = 0 V RF Characteristics - Load Pull Performance at 3.0 GHz VDS = 28 V; IDQ = 200 mA; Pulse: 100 s, 20 % Characteristics Linear Gain Output Power at 1 dB Gain Compression Drain Efficiency at 1 dB Gain Compression Power-Added Efficiency at 1 dB Gain Compression Gain at 1 dB Compression Symbol Min GLIN P1dB DE1dB PAE1dB G1dB Typ Max 17.3 51.3 59.0 57.6 16.3 Unit dB W % % dB RF Characteristics - Load Pull Performance at 3.5 GHz VDS = 28 V; IDQ = 200 mA; Pulse: 100 s, 20 % Characteristics Linear Gain Output Power at 1 dB Gain Compression Drain Efficiency at 1 dB Gain Compression Power-Added Efficiency at 1 dB Gain Compression Gain at 1 dB Compression Datasheet: Rev E 02-21-13 (c) 2013 TriQuint Symbol GLIN P1dB DE1dB PAE1dB G1dB - 2 of 12 - Min Typ 17.6 55.0 62.1 60.7 16.6 Max Unit dB W % % dB Disclaimer: Subject to change without notice www.triquint.com T1G4005528-FS 55W, 28V, DC - 3.5GHz, GaN RF Power Transistor RF Characteristics - Performance at 3.3 GHz in 3.0 to 3.5 GHz Eval. Board VDS = 28 V; IDQ = 200 mA; Pulse: 100 s, 20 % Characteristics Symbol Min Typ GLIN P3dB DE3dB PAE3dB G3dB 14.0 55.0 50.0 45.0 11.0 15.1 65.6 52.5 49.3 12.1 Linear Gain Output Power Drain Efficiency at 3 dB Gain Compression Power-Added Efficiency at 3 dB Gain Compression Gain at 3 dB Compression Max Unit dB W % % dB RF Characteristics - Narrow Band Performance at 3.5 GHz VDS = 28 V; IDQ = 200 mA; CW at P1dB, applied for 3.5 seconds Characteristics Impedance Mismatch Ruggedness Symbol (1) VSWR Min Typ Max Unit 10:1 Notes: 1. VSWR testing performed with increasing real impedance value only from reference Z to 10 times reference Z Datasheet: Rev E 02-21-13 (c) 2013 TriQuint - 3 of 12 - Disclaimer: Subject to change without notice www.triquint.com T1G4005528-FS 55W, 28V, DC - 3.5GHz, GaN RF Power Transistor Thermal Information Test Conditions TCH (C) JC (C/W) (1) DC at 85 C Case 211 2.1 Notes: 1. Thermal resistance (channel to backside of case) Maximum Channel Temperature T1G4005528-FS Max Channel Temperature vs Pulse Width Maximum Channel Temperature (degC) (Tbase=85C) 230 220 210 200 190 180 170 160 150 140 130 120 110 100 90 80 1E-07 Duty cycle 10% Duty cycle 25% 1E-06 1E-05 1E-04 1E-03 Pulse Width (sec) 1E-02 1E-01 1E+00 Median Lifetime Datasheet: Rev E 02-21-13 (c) 2013 TriQuint - 4 of 12 - Disclaimer: Subject to change without notice www.triquint.com T1G4005528-FS 55W, 28V, DC - 3.5GHz, GaN RF Power Transistor Load-Pull Data RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency (ZLcmp). Notes: Test Conditions: VDS = 28 V, IDQ = 200 mA Test Signal: Pulse Width = 100 s, Duty Cycle = 20 % Device Characterization Data Freq. (GHz) Real(ZS) Imag(ZS) Real(ZL) 1.0 0.78 0.94 3.73 2.0 0.90 -2.75 2.70 3.0 3.59 -5.46 3.25 3.5 7.93 -3.92 3.23 Imag(ZL) G1dB (Db) P1dB (dBm) P1dB (W) DEff1dB (%)PAE1dB (%) 0.92 23.1 47.8 59.8 60.8 60.5 1.37 18 48.4 68.8 72 70.8 -0.90 16.9 47.4 55 63.7 62.4 -1.90 17.2 47.7 58.9 65.7 64.4 Note: The higher efficiency at 2 GHz is a result of harmonic terminations with the LP test setup. Datasheet: Rev E 02-21-13 (c) 2013 TriQuint - 5 of 12 - Disclaimer: Subject to change without notice www.triquint.com T1G4005528-FS 55W, 28V, DC - 3.5GHz, GaN RF Power Transistor Typical Performance: Gain, Efficiency and Output Power Performance is measured at DUT reference plane T1G4005528-FS Gain, DEff and PAE vs. Pout Freq. = 1000 MHz; VDS = 28 V, IDQ = 200 mA; Pulse: 100 s, 20% T1G4005528-FS Gain, DEff and PAE vs. Pout Freq. = 3000 MHz; VDS = 28 V, IDQ = 200 mA; Pulse: 100 s, 20% Datasheet: Rev E 02-21-13 (c) 2013 TriQuint T1G4005528-FS Gain, DEff and PAE vs. Pout Freq. = 2000 MHz; VDS = 28 V, IDQ = 200 mA; Pulse: 100 s, 20% T1G4005528-FS Gain, DEff and PAE vs. Pout Freq. = 3500 MHz; VDS = 28 V, IDQ = 200 mA; Pulse: 100 s, 20% - 6 of 12 - Disclaimer: Subject to change without notice www.triquint.com T1G4005528-FS 55W, 28V, DC - 3.5GHz, GaN RF Power Transistor Performance Over Temperature: Gain, Efficiency and Output Power Performance measured in TriQuint's 3.0 to 3.5 GHz Evaluation Board at 3 dB compression Datasheet: Rev E 02-21-13 (c) 2013 TriQuint - 7 of 12 - Disclaimer: Subject to change without notice www.triquint.com T1G4005528-FS 55W, 28V, DC - 3.5GHz, GaN RF Power Transistor Evaluation Board Performance Performance measured in TriQuint's 3.0 to 3.5 GHz Evaluation Board at 3 dB compression Datasheet: Rev E 02-21-13 (c) 2013 TriQuint - 8 of 12 - Disclaimer: Subject to change without notice www.triquint.com T1G4005528-FS 55W, 28V, DC - 3.5GHz, GaN RF Power Transistor Evaluation Board - PC Board Layout: T1G4005528-FS-EVB1, 3.0 to 3.5 GHz Bill of Materials Reference Desg. Value Qty Manufacturer Part Number C1, C7 C2, C8 C3, C9 C4, C10 C5, C11 C6, C12 L1, L2 R1 C13 PCB IMN OMN 47 pF 82 pF 2200 pF 22000 pF 1 F 470 F 12.5 nH 2.4 2400 pF RO3210 2 2 2 2 2 2 2 1 1 ATC ATC Vitramon Vitramon Allied Illinois Cap Coilcraft Vishay Dale Dielectric Labs Rogers 100A470JW 100B820J7 VJ1206Y222KRA 48C4641 213-0366 477KXM035M A04T_JL CRCW25122R40JNEG C08BL242X-5UN-X0B r = 10.2; h = 25 mil Distributed transmission line input network Distributed transmission line output network Datasheet: Rev E 02-21-13 (c) 2013 TriQuint - 9 of 12 - Disclaimer: Subject to change without notice www.triquint.com T1G4005528-FS 55W, 28V, DC - 3.5GHz, GaN RF Power Transistor Evaluation Board - T1G4005528-FS-EVB1, 3.0 to 3.5 GHz Bias-up Procedure Bias-down Procedure Set gate voltage (VG) to -5.0V Set drain voltage (VD) to 28 V Slowly increase VG until quiescent ID is 200 mA. Typical VG is -3.5 V Apply RF signal Turn off RF signal Turn off VD and wait 1 second to allow drain capacitor(s) to dissipate Turn off VG Datasheet: Rev E 02-21-13 (c) 2013 TriQuint - 10 of 12 - Disclaimer: Subject to change without notice www.triquint.com T1G4005528-FS 55W, 28V, DC - 3.5GHz, GaN RF Power Transistor Package Information and Dimensions Notes: Unless specified otherwise, dimensions are in millimeters This package is lead-free/ROHS-compliant. It is a 9.7 mm x 5.8 mm ceramic air cavity flat lead package and the base material is CuMoCu. Datasheet: Rev E 02-21-13 (c) 2013 TriQuint - 11 of 12 - Disclaimer: Subject to change without notice www.triquint.com T1G4005528 1G4005528-FS 55W, 28V, DC - 3.5GHz, GaN RF Power Transistor Product Compliance Information ESD Sensitivity Ratings Solderability Compatible with the latest version of J-STD-020, J Lead free solder, 260 C. Caution! ESD-Sensitive Sensitive Device RoHs Compliance ESD Rating: Value: Test: Standard: This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). 1A Passes 250 V min. Human Body Model (HBM) JEDEC Standard JESD22--A114 MSL Rating Level 3 at +260 C convection reflow. The part is rated Moisture Sensitivity Level 3 at 260 C per JEDEC standard IPC/JEDEC J-STD-020. 020. ECCN This product also has the following attributes: * Lead Free * Halogen Free (Chlorine, Bromine) * Antimony Free * TBBP-A (C15H12Br402) Free * PFOS Free * SVHC Free U.S. Department of Commerce EAR99 Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@triquint.com sales@triquint.com Tel: Fax: For technical questions and application information: +1.972.994.8465 +1.972.994.8504 Email: info-products@triquint.com products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" a and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information informa itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life life-saving, or lifesustaining applications, or other applications where a failure would reasonably be exp expected ected to cause severe personal injury or death. Datasheet: Rev E 02-21-13 (c) 2013 TriQuint - 12 of 12 - Disclaimer: Subject to change without notice www.triquint.com