T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Datasheet: Rev E 02-21-13
- 1 of 12 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Avionics
• Wideband or narrowband amplifiers
General Description
The TriQuint T1G4005528-FS is a 55 W (P
3dB
) discrete
GaN on SiC HEMT which operates from DC to 3
.5
GHz. The device is constructed with
TriQuint’s proven
0.25um production process, which
features advanced
field plate techniques to optimize p
ower and efficiency
at high drain bias operating conditions.
This
terms of fewer amplifier line-
ups and lower thermal
management costs.
Pin Configurations
Pin No. Symbol
1 RF Output
2 RF Input
Flange Source
Product Features
• Frequency Range: DC to 3.5 GHz
• Linear Gain: >15 dB at 3.5 GHz
• Operating Voltage: 28 V
• Output Power (P
3dB
): 55 W at 3.5 GHz
• Lead-free and RoHS compliant
Ordering Information
Part ECCN
Description
T1G4005528-FS EAR99 Packaged part:
Flangeless
T1G4005528-FS-EVB1
EAR99
3.0-3.5 GHz
Evaluation Board
Functional Block Diagram
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Datasheet: Rev E 02-21-13
- 2 of 12 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Notes:
1. Operation of this device outside the parameter ranges
given may cause permanent damage. These are stress
ratings only, and functional operation of the device at
these conditions is not implied. Refer to the Median Life
Time plot for additional information regarding channel
temperature.
Absolute Maximum Ratings
Parameter Value
Drain to Gate Voltage, Vd - Vg
40 V
Gate Voltage, Vg -8 to 0 V
Drain Current, Id
9.6 A
Gate Current, Ig -20 to 33 mA
Power Dissipation, Pdiss
90 W
RF Input Power, CW, T = 25 °C 43 dBm
Channel Temperature, Tch
275 °C
Mounting Temperature, (30 sec) 320 °C
Storage Temperature -40 to 150 °C
DC Characteristics
Recommended operating conditions apply unless otherwise specified: T
A
= 25 °C
Characteristics Symbol Min Typ Max
Unit
Conditions
Break-Down Voltage Drain Source BV
DSX
85 120 V V
GS
= -8 V, I
D
= 10 mA
Gate Quiescent Voltage
V
GS (Q)
-3.5
V
V
DS
= 28 V, I
DQ
= 0.8 A
Gate Threshold Voltage
V
GS (th)
-4.5
V
V
DS
= 10 V, I
D
= 40 mA
Saturated Drain Current
I
DSX
16
A
V
DS
= 5 V, V
GS
= 0 V
RF Characteristics – Load Pull Performance at 3.0 GHz
V
DS
= 28 V; I
DQ
= 200 mA; Pulse: 100 µs, 20 %
Characteristics Symbol
Min Typ Max Unit
Linear Gain G
LIN
17.3 dB
Output Power at 1 dB Gain Compression
P
1dB
51.3 W
Drain Efficiency at 1 dB Gain Compression
DE
1dB
59.0 %
Power-Added Efficiency at 1 dB Gain Compression
PAE
1dB
57.6 %
Gain at 1 dB Compression
G
1dB
16.3 dB
RF Characteristics – Load Pull Performance at 3.5 GHz
V
DS
= 28 V; I
DQ
= 200 mA; Pulse: 100 µs, 20 %
Characteristics Symbol
Min Typ Max Unit
Linear Gain G
LIN
17.6 dB
Output Power at 1 dB Gain Compression
P
1dB
55.0 W
Drain Efficiency at 1 dB Gain Compression
DE
1dB
62.1 %
Power-Added Efficiency at 1 dB Gain Compression
PAE
1dB
60.7 %
Gain at 1 dB Compression
G
1dB
16.6 dB
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Datasheet: Rev E 02-21-13
- 3 of 12 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
RF Characteristics – Performance at 3.3 GHz in 3.0 to 3.5 GHz Eval. Board
V
DS
= 28 V; I
DQ
= 200 mA; Pulse: 100 µs, 20 %
Characteristics Symbol
Min Typ Max Unit
Linear Gain G
LIN
14.0 15.1 dB
Output Power
P
3dB
55.0 65.6 W
Drain Efficiency at 3 dB Gain Compression
DE
3dB
50.0 52.5 %
Power-Added Efficiency at 3 dB Gain Compression
PAE
3dB
45.0 49.3 %
Gain at 3 dB Compression
G
3dB
11.0 12.1 dB
RF Characteristics – Narrow Band Performance at 3.5 GHz
V
DS
= 28 V; I
DQ
= 200 mA; CW at P
1dB
, applied for 3.5 seconds
Characteristics Symbol
Min Typ Max Unit
Impedance Mismatch Ruggedness
(1)
VSWR 10:1
Notes:
1. VSWR testing performed with increasing real impedance value only from reference Z to 10 times reference Z
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Datasheet: Rev E 02-21-13
- 4 of 12 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Thermal Information
Test Conditions
T
CH
(°C)
θ
JC
(°C/W)
(1)
DC at 85 °C Case
211 2.1
Notes:
1. Thermal resistance (channel to backside of
case)
Maximum Channel Temperature
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
1E-07 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
Maximum Channel Temperature (degC)
Pulse Width (sec)
T1G4005528-FS Max Channel Temperature vs Pulse Width
(Tbase=85°C)
Duty cycle 10%
Duty cycle 25%
Median Lifetime
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Datasheet: Rev E 02-21-13
- 5 of 12 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Device Characterization Data
Freq. (GHz)
Real(ZS)
Imag(ZS)
Real(ZL) Imag(ZL)
G
1dB
(Db)
P
1dB
(dBm)
P
1dB
(W)
DEff
1dB
(%)
PAE
1dB
(%)
1.0 0.78 0.94 3.73 0.92 23.1 47.8 59.8 60.8 60.5
2.0 0.90 -2.75 2.70 1.37 18 48.4 68.8 72 70.8
3.0 3.59 -5.46 3.25 -0.90 16.9 47.4 55 63.7 62.4
3.5 7.93 -3.92 3.23 -1.90 17.2 47.7 58.9 65.7 64.4
Note: The higher efficiency at 2 GHz is a result of harmonic terminations with the LP test setup.
Load-Pull Data
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are
not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The
impedances listed follow an optimized trajectory to maintain high power and high efficiency (ZLcmp).
Notes:
Test Conditions: V
DS
= 28 V, I
DQ
= 200 mA
Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Datasheet: Rev E 02-21-13
- 6 of 12 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Typical Performance: Gain, Efficiency and Output Power
Performance is measured at DUT reference plane
T1G4005528
-
FS Gain, DEff and PAE vs. Pout
T1G4005528
-
FS Gain, DEff and PAE vs. Pout
Freq. = 1000 MHz; V
DS
= 28 V, I
DQ
= 200 mA; Pulse: 100 µs, 20% Freq. = 2000 MHz; V
DS
= 28 V, I
DQ
= 200 mA; Pulse: 100 µs, 20%
T1G4005528-FS Gain, DEff and PAE vs. Pout T1G4005528-FS Gain, DEff and PAE vs. Pout
Freq. = 3000 MHz; V
DS
= 28 V, I
DQ
= 200 mA; Pulse: 100 µs, 20% Freq. = 3500 MHz; V
DS
= 28 V, I
DQ
= 200 mA; Pulse: 100 µs, 20%
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Datasheet: Rev E 02-21-13
- 7 of 12 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Performance Over Temperature: Gain, Efficiency and Output Power
Performance measured in TriQuint’s 3.0 to 3.5 GHz Evaluation Board at 3 dB compression
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Datasheet: Rev E 02-21-13
- 8 of 12 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Evaluation Board Performance
Performance measured in TriQuint’s 3.0 to 3.5 GHz Evaluation Board at 3 dB compression
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Datasheet: Rev E 02-21-13
- 9 of 12 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Evaluation Board – PC Board Layout: T1G4005528-FS-EVB1, 3.0 to 3.5 GHz
Bill of Materials
Reference Desg. Value Qty
Manufacturer Part Number
C1, C7 47 pF 2 ATC 100A470JW
C2, C8 82 pF 2 ATC 100B820J7
C3, C9 2200 pF 2 Vitramon VJ1206Y222KRA
C4, C10 22000 pF 2 Vitramon 48C4641
C5, C11 1 µF 2 Allied 213-0366
C6, C12 470 µF 2 Illinois Cap 477KXM035M
L1, L2 12.5 nH 2 Coilcraft A04T_JL
R1 2.4 Ω 1 Vishay Dale CRCW25122R40JNEG
C13 2400 pF 1 Dielectric Labs C08BL242X-5UN-X0B
PCB RO3210 Rogers ε
r
= 10.2; h = 25 mil
IMN Distributed transmission line input network
OMN Distributed transmission line output network
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Datasheet: Rev E 02-21-13
- 10 of 12 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Evaluation Board – T1G4005528-FS-EVB1, 3.0 to 3.5 GHz
Bias-up Procedure
Set gate voltage (V
G
) to -5.0V
Set drain voltage (V
D
) to 28 V
Slowly increase V
G
until quiescent I
D
is 200 mA.
Typical V
G
is -3.5 V
Apply RF signal
Bias-down Procedure
Turn off RF signal
Turn off V
D
and wait 1 second to allow drain
capacitor(s) to dissipate
Turn off V
G
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Datasheet: Rev E 02-21-13
- 11 of 12 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Package Information and Dimensions
This package is lead-free/ROHS-compliant. It is a 9.7 mm x 5.8 mm ceramic air cavity flat lead package and the base material
is CuMoCu.
Notes:
Unless specified otherwise,
dimensions are in millimeters
Datasheet: Rev E 02-21-13
© 2013 TriQuint
Product Compliance Information
ESD Sensitivity Ratings
Caution! ESD-
Sensitive Device
ESD Rating: 1A
Value:
Passes ≥ 250 V min.
Test:
Human Body Model (HBM)
Standard: JEDEC Standard JESD22
-
MSL Rating
Level 3 at +260 °C convection reflow.
The part is rated Moisture Sensitivity Level 3 at
JEDEC standard IPC/JEDEC J-STD-
020.
ECCN
U.S. Department of Commerce EAR99
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com
Email: info-
sales@triquint.com
For technical questions and application information:
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the
contained herein. TriQuint assumes no
responsibility or liability whatsoever for any of the
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the
The information contained herein is provided “AS IS, WHERE IS” a
with such information is entirely with the user. All information contained
Customers should obtain and verify the latest relevant information
information contained herein or any use of such information
patent rights, licenses, or any other intellectual property
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life
sustaining applications, or other applications where a failure would reasonably be exp
personal injury or death.
T
1G4005528
55W, 28V, DC –
3.5GHz, GaN RF Power Transistor
- 12 of 12 -
Disclaimer: Subject to change without notice
Product Compliance Information
Sensitive Device
Human Body Model (HBM)
-
A114
Solderability
Compatible with
the latest version of J
free solder, 260 °C.
RoHs Compliance
This part is
compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain
Hazardous Substances in Electrical and Electronic
Equipment).
This product also has the following attributes:
• Lead Free
•
Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C
15
H
12
Br
4
0
2
) Free
• PFOS Free
• SVHC Free
The part is rated Moisture Sensitivity Level 3 at
260 °C per
020.
For the latest specifications, additional product information, worldwide sales and distribution locations, and
Tel: +1.972.994.8465
sales@triquint.com
Fax: +1.972.994.8504
For technical questions and application information:
Email: info-
products@triquint.com
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the
responsibility or liability whatsoever for any of the
information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the
information contained herein.
The information contained herein is provided “AS IS, WHERE IS” a
nd with all
faults, and the entire risk associated
with such information is entirely with the user. All information contained
herein is subject to change without notice.
Customers should obtain and verify the latest relevant information
before placing
orders for TriQuint products. The
information contained herein or any use of such information
does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property
rights, whether with regard to such informa
TriQuint products are not warranted or authorized for use as critical components in medical, life
sustaining applications, or other applications where a failure would reasonably be exp
ected to cause
1G4005528
-FS
3.5GHz, GaN RF Power Transistor
Disclaimer: Subject to change without notice
www.triquint.com
the latest version of J
-STD-
020, Lead
compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain
Hazardous Substances in Electrical and Electronic
This product also has the following attributes:
Halogen Free (Chlorine, Bromine)
) Free
For the latest specifications, additional product information, worldwide sales and distribution locations, and
products@triquint.com
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the
information
information contained
information contained herein.
faults, and the entire risk associated
herein is subject to change without notice.
orders for TriQuint products. The
does not grant, explicitly or implicitly, to any party any
rights, whether with regard to such informa
tion itself or
TriQuint products are not warranted or authorized for use as critical components in medical, life
-saving, or life-
ected to cause
severe