SPECIFICATIONS General Series PTC {0004, PTC 10005 NPN Silicon Power Darlington Transistors 20 Amperes 400 Volts FEATURES @ High Voltage Rating 400 Volts Sustaining Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS High Voltage Switching Power Supplies @ Inverters/Regulators @ Deflection Circuits @ Control Circuitry Electrical The PTC 10004 and PTC 10005 Powermode series of silicon NPN darlington transistors are designed for high voltage, high speed, high power switching applications. These high voltage darlington transistors are ideally suited for applications in switching power supplies, regulators and inverter or converter circuits operating off 240 volt lines. 1.050 0.161 (4.09) DIA. (26.68) MAX. 0.151 (3.84) 2 HOLES 0.675 (17.65)t 1.573 0.655 (16.64) (39.96) MAX. ! 1.197 (30.40) 1.177 (29.90) BASE 0.225 (5.72)t 0.205 (5.21) 0.440 (11.18)t 0.420 (10.67) tMEASURED AT SEATING PLANE __ 0.450 (11.43) ; 0.875 (22.23) 0.250 (6.35) 0.135 MAX. DIA (3.43) MAX. ae / SEATING - | PLANE LJ te \ 0.32 (8.13) MIN. 0.043 (1.09) py. 0.038 (0.97) Basic dimensions in inches. Dimensions shown in PARENTHESES are in millimeters. Package outline JEDEC TO-204MA AVAILABLE IN STANDARD VALUES FROM STOCK AT ELECTRONIC DISTRIBUTORS. 276SERIES PTC 10004/10005 High Voltage Fast Switching NPN Darlingtons Absolute maximum ratings Thermal and mechanical characteristics Description PTC 10004 | PTC 10005 | Unit | Conditions Description Type | Min. | Typ. | Max. | Unit VCBO Collector-Base Voltage 450 500 Volts RaJC Thermal Resistance Junction to Case All 10 CW VCEO(sus} Collector-Emitter Voltage 350 400 Volts Maximum Lead Temperature for VCEX(sus) _ Collector-Emitter Voltage 400 450 Volts Soldering Purposes: Ye from Case 275 C Ic Collector Current Continuous 20 A for 5 Seconds Ic Collector Current Peak 30 A 1J,tSTG Operating and Storage Junction 65 200 5 Temperature Ran: ~ c Ip Base Current Continuous 25 A pe ge IB Base Curent Peak 5.0 A PD Maximum Power Dissipation 175 Ww To = 25C IE Emitter Current Continuous 20 A IE Emitter Current Peak 30 A Electrical characteristics at 25C (unless otherwise specified) PTC 10004 PTC 10005 Description Min. Max. Min. Max. Unit Conditions VCEO(sus) Collector-Emitter Ic = 2A L=2mH Sustaining Voltage 350 400 Vv Unclamped VCEX(sus) Collector-Emitter Ic = 2A Sustaining Voltage 400 450 Vv VBE(off) = 5V VCE = Rated VCBO ; col cuottc 0.25 0.25 mA VBEloff) = -1.5V ICEV ollector Cutoff Current 5 5 mA VCE = Rated VCBO VBE(off) = 1.5V, Tc = +100C IEBO Emitter Cutoff Current 175 175 mA VEB = 2V Colt ; 19 19 Vv Ic = 10A, IB = 400mA VCE ten Vole 20 20 V__| Ic =10A,Ip = 400mA, Tc = +100C 3.0 3.0 Vv Ic = 20A, IB = 1A VBE(sat) Base-Emitter 7 ~ Saturation Voltage 25 25 Vv Ic = 10A, IB = 400 mA 50 600 50 600 Ic = 5A, VCE = 5V hFE DC Current Gain c CE 40 400 40 400 Ic = 10A, VCE = 5V VE Diode Forward Voltage 5 5 Vv IF = 10A Isfo Second Breakdown 10 10 VCE = 17.5V, Collector Current Non Rep. tp = 1s Switching characteristics Description Resistive Load Min. Max. Min. Max. Unit Conditions td Delay Time 0.2 0.2 BS ty Rise Ti 0.6 0.6 Vcc = 250V, Ic = 10A t = fe pi = 044 Ipe = 1.6A, tp = 20us ts Storage Time 1.5 15 BS VBE (off) = 6V tf Fall Time 0.5 0.5 MS Description Inductive Load, Clamped Min. Max. Min. Max. Unit Conditions tev Storage Time 3.0 3.0 Vclamp = VCEX, IC = 10A igi = 0.4A, IB2 = -1.6A te Crossover Time 05 0.5 VBE(off) = -6V,L = 200uH tsv Storage Time 4.0 40 us Velamp = 250V, Tc = + 100C IB1 = 0.4A, IB2 = 1.6A, IC = 10A te Crossover Time 15 15 BS VBE(off) = ~6V,L = 200uH 277