Rugged Power MOSFETs File Number 2033 Avalanche Energy Rated N-Channel Power MOSFETs 10A and 8A, 400V-300V tos(on) = 0.559 and 0.8 Features: @ Single pulse avalanche energy rated B SOA is power-dissipation limited Nanosecond switching speeds M@ Linear transfer characteristics @ High input impedance The IRF740R, IRF741R, IRF742R and IRF743R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be IRF740R, IRF741R IRF742R, IRF743R TERMINAL DIAGRAM D Ss 92cs-42658 N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATION DRAIN, __ pl (FLANGE) OC _ = tt operated directly from integrated circuits. TOP VIEW Gare The IRF-types are supplied in the JEDEC TO-220AB plastic sees-s9528 package. JEDEC TO-220AB Absolute Maximum Ratings Parameter IRF740R IRF741R (RF742R IRF743R Units Vos Drain - Source Voltage 400 350 400 350 Vv Voor Drain - Gate Voltage (Res = 20 KQ) 400 350 400 350 v lo @ Tc = 25C Continuous Drain Current 10 10 8.0 8.0 A 1p @ Tc = 100C Continuous Drain Current 6.0 6.0 5.0 5.0 A lon Pulsed Drain Current @ 40 40 32 32 A Ves Gate - Source Voltage +20 Vv Po @ Te = 25C Max. Power Dissipation 125 (See Fig. 14) Ww Linear Derating Factor 1.0 (See Fig. 14) w/c E.. Single Pulse Avalanche Energy Rating @ 520 mj the Operating nc ange 85 0160 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-147Rugged Power MOSFETs Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) IRF740R, IRF741R IRF742RA, (RF743R Par Type Min. Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage IRF740R _ _ = IRF742R 400 Vv Vas = OV IRF741R = IRE743R | 350 - _ Ip = 250uA Vesim Gate Threshold Voltage ALL 2.0 = 4.0 Vos = Ves, lp = 250u A fass Gate-Source Leakage Forward ALL = 500 nA Ves = 20V less Gate-Source Leakage Reverse ALL _ = -500 nA Ves = -20V loss Zero Gate Voltage Drain Current _ _ 250 uA Vos = Max. Rating, Vos = OV ALL [T= Tt000 [wa _[ Vos = Max. Rating x 0.8, Ves = OV, To = 125C loom == On-State Drain Current @ IRF740R | 49 _ _ A IRF74R Vos > loton X Reston) mex. Ves = 10V IRF742R 1 54 _ _ A !RF743R . Roston Static Drain-Source On-State IRF740R . 4 _ 0.47 0.55 Q Resistance ee Vos = 10V, In = 5.08 iRF743R| | $8 | 80 | 2 ts Forward Transconductance @ ALL 4.0 7.0 __}| S$) _| Vos > Iptom X Rostommax, Ip = 5.0A Cis input Capacitance ALL _ 1250 _ pF Ves = OV, Vos = 25V, f = 1.0 MHz Coss Output Capacitance ALL _ 300 = pF See Fig. 10 Cros Reverse Transfer Capacitance ALL = 80 =_ pF fatont Turn-On Delay Time ALL _ 17 35 ns Von = 175V, lp = 5.0A, Zo = 4.72 te Rise Time ALL. = 5.0 15 ns See Fig. 17 tao Turn-Oft Delay Time ALL 45 90 ns {MOSFET switching times are essentially th Fall Time ALL _ 16 35 ns independent of operating temperature.) Qo Total Gate Charge ALL _ 4 60 nc Ves = 10V, Ip = 12A, Vos = 0.8 Max. Rating. _(Gate-Source Plus Gate-Drain) : See Fig. 18 for test circuit. (Gate charge is Qu Gate-Source Charge ALL _ 18 ca nc essentially independent of operating Qya___Gate-Drain (Miller) Charge ALL 23 = nc _| temperature.) Lo Internal Drain Inductance _ 3.5 _ nH Measured from the Modifiec| MOSFET contact screw on tab symbol showing the to center of die. internal device ALL 45 nH | Measured from the inductances. drain lead, 6mm (0.25 in.) from package to LO center of die. Ls Internal Source Inductance ALL _ 75 _ nH Measured from the ee Ls source Jead, 6mm (0.25 in.) from $ package to source 92s azees bonding pad. Thermal Resistance RinJC Junction-to-Case ALL _ = 1.0 C/iw RnCS _Case-to-Sink ALL _ 1.0 _ C/W_| Mounting surface flat, smooth, and greased. RJA - Junction-to-Ambient ALL =~ - 80 C/W _| Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF740R _ _ 10 A Moditied MOSFET symbol (Body Diode) tRF741R showing the integral IRF742R A reverse P-N junction rectifier. inF74gR| | | 80 Isa Pulse Source Current IRF740R} _ 40 A s (Body Diode) IRF741R IRF742R ican IRF743R| ~ | | A Vsp Diode Forward Voltage @ IRF740R = = _ IRF741R | _ 2.0 Vv Tc = 26C, Is = 10A, Ves = OV IRF742R = = = IRF743R | _ 19 Vv Te = 25C, ts = 8.0A, Ves = OV te Reverse Recovery Time ALL 800 _ ns Ty = 150C, Ie = 10A, die/dt = 100A/ps Qar Reverse Recovered Charge ALL _ 5.7 = pc Ts = 150C, Ie = 10A, dir/dt = 100A/ps ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ Ty = 25C to 150C. @ Pulse Test: Pulse width < 300s, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5}. Vo = 50V, starting Ty = 25C, L = 14 MH, Ros = 502, Ipeak = BA. See figures 15, 16. 6-148Rugged Power MOSFETs IRF740R, IRF741R IRF742R, IRF743R us PULSE t ' Vos > 'Dion) * Ip, ORAIN CURRENT (AMPERES) fp, DRAIN CURRENT (AMPERES) 0 20 40 60 80 100 0 2 4 6 8 10 Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vs, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics AREAIS LIMITED BY 00 us PULSE TEST IR IRF742R, IRF740R, 17 Te = 25C Ty 150C max Bac = LOK SINGLE PuLse {+ a 1p, DRAIN CURRENT {AMPERES} 1g, DRAIN CURRENT (AMPERES) Tr IRF740R, 2R. av a 2 6 & 10 102 5 10 2 s0 100 200 500 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area s > 2 a s nm L [ae ty wm b'2| 2 2 2 a 1. DUTY FACTOR, D= oa SINGLE ENT THERMAL IMPEDANCE) 2, PER UNIT BASE = Rinyc 1.0 DEG. C/W. 2 o S 3. Tym - To = Pom Zthuclt)- Zenac(tl/Aynyc. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) 0.01 : 18 902 5 4 2 5 3 2 5 we 2 5 qgt 2 5 10 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 6-149Rugged Power MOSFETs IRF740R, IRF741R IRF742R, IRF743R wa PULSE TEST Vos > !ovon) x Apsion) s 3 on 'y = 1500C Sty TRANSCONDUCTANCE (StEMENS} 6 Ipaq, REVERSE ORAIN CURRENT (AMPERES) 1.0 a 5 10 1 20 25 0 1 2 3 4 5 Ip, QRAIN CURRENT (AMPERES) Ven, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 1.25 25 115 2.0 2 a wn 2 a o (NORMALIZED) 08s Os BVpgs, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Apsion). ORAIN-TO-SOURCE ON-STATE RESISTANCE wn ips 12A FOR TEST CIRCUIT 8 0.75 0 40 0 40 80 120 t60 -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature 2000 Cigg = Cyy + Cog, Cos SHORTED . 20 Crap = Cog . Cyc, fet Com * Cas * 1800 Ca * Cog a a S15 g is = 1200 5 o = z a < S $ 2 10 = p00 2 e a e $ @ a a o ~ a 5 10 i) ao 8 xu 3% 4 4 50 0 20 40 60 60 Vos, ORAIN-TO-SCUACE VOLTAGE (VOLTS) Q). TOTAL GATE CHARGE inf) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-150Rugged Power MOSFETs IRF740R, IRF741R IRF742R, IRF743R 18 , 1 a Apsion) MEASURED WITH CURRENT PULSE OF = 2.0 us QURATION. INITIAL Ty = 25C, (HEATING 2 PEFFECT OF 2.0 us PULSE 1S MINIMAL.) I 2 Veg: 10V 8 Bo whee fe 7 2 a fo 2 e I | o 3 YoNgg * 20V 4 Zz, IRFTAOR, 749A 3 . : : YA : 3 0g 4 = IRF742R, 7438 3 = o 5 2 3 2 z4 = r + 7 < S } S _ : 2 504 + fo = 3 | | 2 = : i | . | 0 9 10 20 30 40 25 50 5 100 125 150 Ip, ORAIN CURRENT (AMPERES) Te, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature Vos = S VARY tp TO OBTAIN REQUIRED PEAK iL Vgg710 I Fe ouT Res 3 3 8 2 s 9208-42659 Fig. 15 Unclamped Energy Test Circuit Pp, POWER DISSIPATION (WATTS) = S se oS G 20 40 60 80 100 0 140 Yo. CASE TEMPERATURE (C} Fig. 14 Power Vs. Temperature Derating Curve 92CS- 47660 Fig. 16 Unclamped Energy Waveforms Vos CURRENT USOLATED REGULATOR SUPPLY} SAME TYPE = AS DUT BATTERY {02s 175 ADJUST Ry TO OBTAIN SPECIFIED Ip za Vos 0 _ DuT PULSE t O.U.T. [5 cero f 5 mA 9 -o--- Vin | Peon ANA 0 Vos _ ap \p CURRENT CURRENT SAMPLING SAMPLING. = RESISTOR RESISTOR Fig. 17 Switching Time Test Circuit Fig. 18 Gate Charge Test Circuit 6-151